HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Features
Low Noise Figure: 0.75 dB
High Gain: 19 dB
High Output IP3: +29.5 dBm
Single Supply: +3V to +5V
6 Lead 2x2mm DFN Package: 4 mm
2
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC667LP2(E) is ideal for:
• WiMAX, WiBro & Fixed Wireless
• SDARS & WLAN Receivers
• Infrastructure & Repeaters
• Access Points
• Telematics & DMB
Functional Diagram
General Description
Electrical Specifi cations,
T
A
= +25° C
O
Parameter
B
SO
Vdd = +3 Vdc
Min.
Typ.
2300 - 2700
14
17.5
0.01
0.9
10
15
9.5
11.5
12.5
22
24
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for WiMAX, WLAN and
fixed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise figure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
LE
Max.
Min.
16
1.2
13.5
32
TE
Vdd = +5 Vdc
Typ.
2300 - 2700
19
0.01
0.75
12
14
16.5
17
29.5
59
75
1.1
Max.
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Broadband Gain & Return Loss
25
20
S21
Gain vs. Temperature
24
Vdd=5V
7
AMPLIFIERS - LOW NOISE - SMT
7-2
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
0.5
1
1.5
Vdd=5V
Vdd=3V
S22
S11
22
20
GAIN (dB)
18
16
14
12
TE
Vdd=3V
+25C
+85C
-40C
2
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
5
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
Input Return Loss vs. Temperature
[1]
0
RETURN LOSS (dB)
-10
SO
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
+25C
+85C
-40C
RETURN LOSS (dB)
-5
+25C
+85C
-40C
LE
0
-5
-10
-15
-20
2
2.1
2.2
2.3
20
18
16
P1dB (dBm)
14
12
10
8
6
2.9
3
2
2.1
2.2
2.3
Output Return Loss vs. Temperature
[1]
+25C
+85C
-40C
-15
-20
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
B
Reverse Isolation vs. Temperature
[1]
P1dB vs. Temperature
Vdd=5V
ISOLATION (dB)
O
-20
-25
-30
-35
-40
-45
-50
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
Vdd=3V
+25C
+85C
-40C
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
[1] Vdd = 5V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Noise Figure vs. Temperature
[1]
1.6
1.4
NOISE FIGURE (dB)
1.2
1
0.8
0.6
0.4
-40C
Vdd=5V
Vdd=3V
+25C
Psat vs. Temperature
20
Vdd=5V
18
+85C
16
Psat (dBm)
14
12
10
8
6
Vdd=3V
0.2
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
TE
+25C
+85C
-40C
2
2.1
2.2
2.3
2.4 2.5 2.6 2.7
FREQUENCY (GHz)
2.8
2.9
3
Output IP3 vs. Temperature
36
34
32
30
IP3 (dBm)
28
26
24
22
20
18
+25C
+85C
-40C
SO
16
2.2
2.3
2.4
O
Output IP3 and Idd vs.
Supply Voltage @ 2300 MHz
36
34
32
30
28
26
24
22
20
18
16
2.7
3.1
3.5
B
76
70
64
58
LE
Vdd=5V
Vdd=3V
2.5
2.6
2.7
FREQUENCY (GHz)
2.8
2.9
3
Output IP3 and Idd vs.
Supply Voltage @ 2500 MHz
36
34
32
30
IP3 (dB)
28
26
24
22
20
18
16
2.7
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
Idd (mA)
76
70
64
58
52
Idd (mA)
46
40
34
28
22
16
5.5
IP3 (dB)
52
46
40
34
28
22
3.9
4.3
4.7
Voltage Supply (V)
5.1
16
5.5
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Output Power, Gain & PAE @ 2300 MHz
[1]
25
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
-5
-10
-25
Pout
Gain
PAE
Output Power, Gain & PAE @ 2300 MHz
[2]
25
20
15
10
5
0
Pout
Gain
PAE
7
AMPLIFIERS - LOW NOISE - SMT
NOISE FIGURE (dB)
-20
-15
-10
INPUT POWER (dBm)
-5
0
TE
-5
-10
-25
-20
-15
-10
INPUT POWER (dBm)
-5
25
20
15
10
5
0
-5
-10
-25
-20
-15
-10
INPUT POWER (dBm)
-5
24
22
NF
Pout (dBm), Gain (dB), PAE (%)
0
Output Power, Gain & PAE @ 2500 MHz
[1]
25
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
-5
-10
-25
SO
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
LE
0
1.2
1.1
1
NOISE FIGURE (dB)
0.9
0.8
0.7
Gain (dB) & P1dB (dBm)
20
18
16
14
12
10
8
2.7
3.1
3.5
0.6
0.5
0.4
5.5
Output Power, Gain & PAE @ 2500 MHz
[2]
Pout
Gain
PAE
-20
-15
-10
INPUT POWER (dBm)
-5
0
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2300 MHz
B
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2500 MHz
1.2
1.1
1
0.9
0.8
0.7
P1dB
Gain
Gain (dB) & P1dB (dBm)
O
24
22
20
18
16
14
12
10
8
2.7
P1dB
Gain
NF
0.6
0.5
0.4
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
3.9
4.3
4.7
Voltage Supply (V)
5.1
5.5
[1] Vdd = 5V
[2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Gain & Return Loss w/ SDARS Tune
[1]
25
20
15
Noise Figure vs. Vdd w/ SDARS Tune
[2]
1.6
1.4
NOISE FIGURE (dB)
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
2.25
2.3
S11
S22
S21
1.2
1
0.8
0.6
0.4
Vdd=5V
Vdd=3V
TE
0.2
2.25
2.3
2.35
2.4
FREQUENCY (GHz)
2.35
FREQUENCY (GHz)
2.4
2.45
2.45
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.88 mW/°C above 85 °C)
Thermal Resistance
(Channel to Ground Paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+10 dBm
150 °C
0.38 W
7-5
O
[1] Vdd = 5V
[2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
SO
170 °C/W
-65 to +150 °C
-40 to +85 °C
LE
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