Side Face Silicon Phototransistor
PT5529B/L2-F
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․This
product itself will remain within RoHS compliant version.
De
scription
․PT5529B/L2-F
is a high speed and high sensitive dual
phototransistor molded in a black plastic package with plat side
view.
․The
device is spectrally matched with IR emitters.
Applications
․Mouse
․Optoelectronic
Switch
․Photo
Interrupter
1
Revision
Copyright ©
:2
LifecyclePhase:
Release Date:2015-10-22 17:03:14.0
2010, Everlight All Rights Reserved. Release Date :Oct.7.2015. Issue No: DPT-0000156 _Rev.2
www.everlight.com
Expired Period: Forever
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
Device Selection Guide
Chip
Materials
Si
Lens Color
Black
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature(*1)
Power Dissipation at (or below)
25℃ Free Air Temperature
Notes:
*1:Soldering time
≦
5 seconds.
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
P
D
Rating
30
5
20
-25 ~ +85℃
-40 ~ +85℃
260
75
Unit
V
V
mA
℃
℃
℃
mW
2
Revision
Copyright ©
:2
LifecyclePhase:
Release Date:2015-10-22 17:03:14.0
2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
Expired Period: Forever
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Symbol
Condition
I
C
=100μA
2
Ee=0mW/cm
I
E
=100μA
2
Ee=0mW/cm
I
C
=2mA
2
Ee=1mW/cm
Min
Typ
Max
Unit
BV
CEO
BV
ECO
30
---
---
V
5
---
---
---
V
V
CE(sat)
t
r
t
f
---
0.4
V
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
---
---
2
15
15
---
μS
---
Collector Dark Current
I
CEO
Ee=0mW/cm
V
CE
=20V
V
CE
=5V,
---
---
100
nA
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
I
C(on)
Ee=0.555mW/cm
λp
λ
0.5
---
---
2
129
---
1085
μA
---
760
940
---
---
1100
nm
nm
3
Revision
Copyright ©
:2
LifecyclePhase:
Release Date:2015-10-22 17:03:14.0
2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
Expired Period: Forever
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
Test Method For On State Collector Current :
2
Condition : Ee=0.555mW/cm , V
CE
=5V
Test Item : Collector Current [I
C(on)
]
Unit : µA
To Distinguish Intensity:
2
Condition:V
CE
:5V Ee:0.555mW/cm
Ranks
Ranks
Symbol
Min
Typ
Max
Unit
Test Condition
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
Ee=0.555mW/c
㎡
V
CE
=5V
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
I
C(ON)
I
C(ON)
I
C(ON)
I
C(ON)
I
C(ON)
I
C(ON
I
C(ON
I
C(ON
I
C(ON
I
C(ON
I
C(ON)
I
C(ON)
129
195
262
330
398
468
536
604
673
742
812
882
---
---
---
---
---
---
---
---
---
---
---
---
226
306
380
461
544
625
703
785
862
944
1018
1085
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
4
Revision
Copyright ©
:2
LifecyclePhase:
Release Date:2015-10-22 17:03:14.0
2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
Expired Period: Forever
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
Typical Electro-Optical Characteristics Curves
Power Dissipation vs. Ambient Temperature
Spectral Sensitivity
100
80
60
40
20
0
1.0
Ta=25 C
0.8
0.6
0.4
0.2
-25
0
25
50
75 85 100
0
1100 1200
Dark Current vs. Ambient Temperature
Collector Current vs. Irradiance Ee
10
100
C
10
10
10
1
0.1
0.01
0.5
10
10
0
25
50
75
100
1
3
2
5
5
Revision
Copyright ©
:2
LifecyclePhase:
Release Date:2015-10-22 17:03:14.0
2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
Expired Period: Forever
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