DSEP 60-12A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 60 A
V
RRM
= 1200 V
t
rr
= 40 ns
A
C
V
RSM
V
1200
V
RRM
V
1200
Type
TO-247 AD
DSEP 60-12A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 90°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 14.5 A; L = 180 µH
V
A
= 1.25·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
60
500
23
1.5
-55...+175
175
-55...+150
A
A
A
mJ
A
°C
°C
°C
W
Nm
g
Applications
q
Features
q
q
q
q
q
q
q
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
C
= 25°C
mounting torque
typical
230
0.8...1.2
6
q
q
q
Symbol
I
R
x
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 60 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
650
2.5
1.74
2.66
0.65
0.25
mA
mA
V
V
K/W
K/W
ns
14.3
A
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
q
q
q
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
I
F
= 1 A; -di/dt = 300 A/ms;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 130 A; -di
F
/dt = 100 A/ms
T
VJ
= 100°C
40
7
Advantages
q
q
q
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see outlines.pdf
© 2000 IXYS All rights reserved
1-2
008
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 60-12A
100
A
80
I
F
60
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
10
m
C
Q
r
8
T
VJ
= 100°C
V
R
= 600V
100
A
80
I
RM
T
VJ
= 100°C
V
R
= 600V
6
I
F
= 120A
I
F
= 60A
I
F
= 30A
60
40
4
40
I
F
= 120A
I
F
= 60A
I
F
= 30A
20
2
20
0
0
1
2
V
F
V
3
0
100
A/
m
s 1000
-di
F
/dt
0
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
280
ns
T
VJ
= 100°C
V
R
= 600V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
120
V
T
VJ
= 100°C
I
F
= 60A
t
fr
V
FR
2.0
1.2
µs
t
fr
0.8
1.5
K
f
1.0
I
RM
t
rr
240
I
F
= 120A
I
F
= 60A
I
F
= 30A
V
FR
80
200
0.5
Q
r
40
0.4
0.0
0
40
80
120 °C 160
T
VJ
160
0
200
400
600
-di
F
/dt
800
A/
m
s 1000
0
0
200
400
0.0
600 A/
m
s 1000
800
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Z
thJC
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.324
0.125
0.201
t
i
(s)
0.0052
0.0003
0.038
0.1
0.01
0.0001
DSEP 60-12A
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal resistance junction to case
914
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2-2
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