Technical Data Sheet
Side Face Silicon Phototransistor
PT5529B/L2/H2-F
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․This
product itself will remain within RoHS compliant version.
Descriptions
•
PT5529B/L2/H2-F is a high speed and high sensitive
dual
phototransistor molded in a black plastic package with plat side
view.
•
The device is spectrally matched with IR emitters.
Applications
•
Mouse
•
Optoelectronic Switch
•
Photo Interrupter
Device Selection Guide
LED Part No.
PT5529B/L2/H2-F
Chip
Material
Silicon
Lens Color
Black
Everlight Electronics Co., Ltd.
Device No: CDPT-552-015
http:\\www.everlight.com
Prepared date: 2007/3/14
Rev 1
Page: 1 of 8
Prepared by: wangyinsheng
PT5529B/L2/H2-F
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature(*1)
Power Dissipation at (or below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
P
D
Rating
30
5
20
-40 ~ +85℃
-40 ~ +85℃
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No: CDPT-552-015
http:\\www.everlight.com
Prepared date: 2007/3/14
Rev 1
Page: 2 of 8
Prepared by: wangyinsheng
PT5529B/L2/H2-F
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Symbol
BV
CEO
BV
ECO
V
CE(sat)
t
r
t
f
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
Ee=0mW/cm
2
V
CE
=20V
V
CE
=5V,
Ee=0.555mW/cm
2
---
---
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
Min
30
5
---
Typ
---
---
---
Max Unit
---
---
V
V
V
0.4
---
---
---
15
15
---
---
μS
---
100
nA
Collector Dark Current
I
CEO
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
I
C(on)
λp
λ
0.5
129
---
1085
μA
---
760
940
---
---
1100
nm
nm
Everlight Electronics Co., Ltd.
Device No: CDPT-552-015
http:\\www.everlight.com
Prepared date: 2007/3/14
Rev 1
Page: 3 of 8
Prepared by: wangyinsheng
PT5529B/L2/H2-F
Typical Electro-Optical Characteristics Curves
Fig.1 Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
1100 1200
Fig.3 Dark Current vs.
Ambient Temperature
Fig. 4 Reverse Light Current vs.
Ee
10
100
C
10
10
10
1
10
0.1
10
0
25
50
75
100
0.01
0.5
1
3
2
5
Everlight Electronics Co., Ltd.
Device No: CDPT-552-015
http:\\www.everlight.com
Prepared date: 2007/3/14
Rev 1
Page: 4 of 8
Prepared by: wangyinsheng
PT5529B/L2/H2-F
Typical Electro-Optical Characteristics Curves
Fig.5 Terminal Capacitance vs.
Reverse Voltage
`
Fig.6 Response Time vs.
Load Resistance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
14
12
10
8
6
4
2
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No: CDPT-552-015
http:\\www.everlight.com
Prepared date: 2007/3/14
Rev 1
Page: 5 of 8
Prepared by: wangyinsheng
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
