BCR103...
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (R
1
=2.2kΩ,
R
2
=2.2kΩ)
•
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR103/F
BCR103L3/T
C
3
BCR103U
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR103
BCR103F
BCR103L3
BCR103T
BCR103U
Marking
WAs
WAs
WA
WAs
WAs
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
Pin Configuration
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Aug-29-2003
BCR103...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR103,
T
S
≤
102°C
BCR103F,
T
S
≤
128°C
BCR103L3,
T
S
≤
135°C
BCR103T,
T
S
≤
109°C
BCR103U,
T
S
≤
118°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR103
BCR103F
BCR103L3
BCR103T
BCR103U
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
5
10
100
200
250
250
250
250
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
165
≤
133
°C
Unit
K/W
2
Aug-29-2003
BCR103...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
20
-
0.8
0.8
1.5
0.9
-
-
-
-
-
-
-
-
-
2.2
1
140
3
-
100
3.5
-
0.3
1.5
2.5
2.9
1.1
-
-
kΩ
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
nA
mA
-
V
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
1)
I
C
= 20 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 1 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 1 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1Pulse test: t < 300µs; D < 2%
-
MHz
pF
f
T
C
cb
3
Aug-29-2003
BCR103...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
h
FE
= 20
10
2
10
2
A
h
FE
10
1
I
C
10
1
10
0
10
-1 -4
10
-3
-2
10
10
A
10
-1
10
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
A
10
-3
10
-2
I
C
I
C
10
-4
10
-3
10
-5
10
-4 -1
10
0
1
10
10
V
10
2
10
-6
0.6
0.8
1
1.2
1.4
V
1.7
V
i(on)
V
i(off)
4
Aug-29-2003
BCR103...
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR103
300
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR103F
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR103L3
300
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR103T
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
5
Aug-29-2003
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
