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CNA1007H

产品描述photo interrupter 5mm slot pcb
产品类别光电子/LED    光电   
文件大小57KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
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CNA1007H概述

photo interrupter 5mm slot pcb

CNA1007H规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Panasonic(松下)
包装说明PISTR104-024, 4 PIN
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
最大暗电源200 nA
最大正向电流0.05 A
功能数量1
标称通态集电极电流0.5 mA
最高工作温度85 °C
最低工作温度-25 °C
光电设备类型TRANSISTOR OUTPUT SLOTTED SWITCH
标称槽宽5 mm

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Transmissive Photosensors (Photo Interrupters)
CNA1007H
Photo Interrupter
Unit : mm
For contactless SW, object detection
Overview
CNA1007H is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
(3.2)
14.0
5.0±0.15
A
6.0
5.0
1.5±0.15
Device
Center
(C1)
3.5±0.5 10.0
2.5
1.3
A'
(10.0)
1.8
3
(4-0.45)
1.65
Features
Position detection accuracy : 0.3 mm
Gap width : 5 mm
Horizontal slit type
The type directly attached to PCB ( with a positioning pins)
+0
φ1.2
–0.1
2
1
4
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Symbol Ratings
V
R
I
F
P
D*1
I
C
5
50
75
20
30
5
100
– 40 to +100
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
Internal connector
2
3
1
Pin connection
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Temperature
*1
*2
P
C*2
T
stg
Operating ambient temperature
Storage temperature
T
opr
–25 to +85
Input power derating ratio is 1.0 mW/˚C at Ta = 25˚C.
Output power derating ratio is 1.33 mW/˚C at Ta = 25˚C.
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Output characteristics Collector cutoff current
Symbol
V
F
I
R
I
CEO
V
R
= 3V
V
CE
= 10V
0.5
5
Conditions
I
F
= 20mA
min
typ
1.25
max
1.4
10
200
14
0.4
Unit
V
µA
nA
mA
V
µs
Collector current
I
C
V
CE
= 5V, I
F
= 20mA
Transfer
characteristics Collector to emitter saturation voltage V
CE(sat)
I
F
= 40mA, I
C
= 1mA
Response time
t
r
, t
f*
V
CC
= 5V, I
C
= 1mA, R
L
= 100Ω
*
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
r
t
f
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
,,
,
,
50Ω
R
L
,,,
4
(4-0.45)
(2.54)
SEC. A-A'
0.5±0.1
1

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