HMC383LC4
v05.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Typical Applications
The HMC383LC4 is ideal for:
Features
Gain: 15 dB
Saturated Output Power: +18 dBm
Output IP3: +25 dBm
Single Positive Supply: +5V @ 100 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm Package
LINEAR & POWER AMPLIFIERS - SMT
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• LO Driver for HMC Mixers
• Military & Space
Functional Diagram
General Description
The HMC383LC4 is a general purpose GaAs PHEMT
MMIC Driver Amplifier housed in a leadless RoHS
compliant SMT package. The amplifier provides 15 dB
of gain and +18 dBm of saturated power from a single
+5V supply. Consistent gain and output power across
the operating band make it possible to use a com-
mon driver/LO amplifier approach in multiple radio
bands. The RF I/Os are DC blocked and matched to
50 Ohms for ease of use. The HMC383LC4 is housed
in a RoHS compliant leadless 4x4 mm package
allowing the use of surface mount manufacturing
techniques.
Electrical Specifications,
T
A
= +25° C, Vdd = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
75
12
12
Min.
Typ.
12 - 16
15
0.02
14
14
15
17
24
10.5
100
135
75
13.5
0.03
13
Max.
Min.
Typ.
16 -24
16
0.02
14
17
16.5
18
25
8
100
135
75
13
0.03
12
Max.
Min.
Typ.
24 - 28
15
0.02
11
10
16
17
25
7.5
100
135
75
12
0.03
10
Max.
Min.
Typ.
28 - 30
13
0.02
13
8
15
16
23
8
100
135
0.03
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC383LC4
v05.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Broadband Gain & Return Loss
20
Gain vs. Temperature
20
10
RESPONSE (dB)
GAIN (dB)
16
12
0
S21
S11
S22
8
-10
+25C
+85C
-40C
4
-20
8
12
16
20
24
28
32
FREQUENCY (GHz)
0
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+85C
-40C
-5
+25C
+85C
-40C
-10
-15
-15
-20
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
-20
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
P1dB vs. Temperature
22
20
18
16
P1dB (dBm)
14
12
10
8
6
4
2
0
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
22
20
18
16
Psat (dBm)
14
12
10
8
6
4
2
0
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
2
HMC383LC4
v05.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Power Compression @ 18 GHz
20
Power Compression @ 30 GHz
20
Pout (dBm), GAIN (dB), PAE (%)
18
16
14
12
10
8
6
4
2
0
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
Pout (dBm)
Gain (dB)
PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
Pout (dBm), GAIN (dB), PAE (%)
18
16
14
12
10
8
6
4
2
0
-16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
Pout (dBm)
Gain (dB)
PAE (%)
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
30
Noise Figure vs. Temperature
13
12
11
10
9
8
7
6
5
4
3
2
1
0
12
14
16
18
20
22
26
IP3 (dBm)
22
+25C
+85C
-40C
18
NOISE FIGURE (dB)
14
+25C
+85C
-40C
10
12
15
18
21
24
27
30
FREQUENCY (GHz)
24
26
28
30
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 18 GHz
19
GAIN (dB), P1dB (dBm), Psat (dBm)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
+25C
+85C
-40C
18
17
16
15
Gain
P1dB
Psat
14
4.5
5
Vdd Supply Voltage (Vdc)
5.5
12
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC383LC4
v05.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm
175 °C
0.92 W
98 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
100
101
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. ALL DIMENSIONS ARE IN INCHES [MM]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
Package Information
Part Number
HMC383LC4
Package Body Material
Alumina, White
Lead Finish
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking
[2]
H383
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
4
99
HMC383LC4
v05.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Pin Descriptions
Pin Number
Function
N/C
Description
No connection required. These pins may be connected
to RF/DC ground without affecting performance if using
grounded coplanar wave guide transmission lines.
This pad is AC coupled and
matched to 50 Ohms.
This pad is AC coupled and
matched to 50 Ohms.
Interface Schematic
LINEAR & POWER AMPLIFIERS - SMT
1, 2, 4 - 15,
17, 18, 20 - 24
3
RFIN
16
RFOUT
19
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 µF are required.
GND
Package base has an exposed metal ground
that must be connected to RF/DC ground.
Vias under the device are required
Application Circuit
Component
C1
C2
C3
Value
100 pF
1,000 pF
2.2 µF
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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