HMC795LP5E
v00.0409
SiGe Wideband direct Quadrature
Modulator w/ vGa, 50 - 2800 MHz
Features
High linearity OiP3: + 22 dBm
High Output Power: +10 dBm Output P1dB
High Carrier suppression: 55 dBc
High sideband suppression: 53 dBc
Read/Write serial Port interface (sPi)
sPi & 6-bit parallel port programmable
32 dB Gain Control
dC - 440 MHz Baseband input
32 lead 5x5 mm qFN Package: 25 mm
2
typical applications
the HMC795lP5e is ideal for:
• uMts, GsM or CdMA Basestations
• Fixed Wireless or Wll
• isM transceivers, 900 & 2400 MHz
• GMsK, qPsK, qAM, ssB Modulators
• Cellular/3G and WiMAX/4G
• Microwave iFs
10
MOdulAtORs - diReCt quAdRAtuRe - sMt
Functional diagram
General description
the HMC795lP5e is a variable gain, direct quadrature
modulator ideal for digital modulation applications
from 50 - 2800 MHz including: Cellular/3G, Broadband
Wireless Access and isM circuits. Housed in a compact
5x5mm (lP5) sMt qFN package, the modulator
offers a high level of integration, exceptionally low
carrier feedthrough, and a low cost alternative to more
complicated double upconversion architectures.
the lO requires -9 to +3 dBm and can be driven
in either differential or single-ended mode. the
baseband inputs will support modulation inputs from
dC - 440 MHz.
the differential RF output port is driven by a 6 bit
digital controlled variable gain amplifier to nominally
provide up to 32 dB of very linear gain control in 0.5 dB
steps. the low carrier suppression is maintained over
the VGA dynamic range. the gain control interface
accepts either three wire serial input or 6 bit parallel
word. in addition, the gain control can be modified
through the sPi to adjust a look up table to control the
gain step to as low as 0.1 dB, with reduced range, or
to adjust individual gain steps for system linearization.
electrical Specifications
, See test conditions on Following Page
Parameter
RF Frequency
Output Power
Output P1dB
Output iP3
Carrier Feedthrough (uncal)
Carrier Feedthrough (Cal)
sideband suppression (uncal)
Output Noise Floor @ 20 MHz offset
RF Return loss
lO Return loss
-10
-10
8
13
23
-40
-55
43
Min.
typ.
1000
9.5
14
25
-45
-62
55
-158
-14
-15
-157
-10
-10
11
7
9
18
-42
-55
49
Max.
Min.
typ.
1950
9
11
22
-46
-62
53
-156
-12
-15
-155
-10
-10
11
4
9
17
-42
-52
45
Max.
Min.
typ.
2690
8
11
22
-46
-57
50
-154
-12
-12
-153
11
Max.
units
MHz
dB
dBm
dBm
dBm
dBm
dBc
dBm/Hz
dB
dB
10 - 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC795LP5E
v00.0409
SiGe Wideband direct Quadrature
Modulator w/ vGa, 50 - 2800 MHz
electrical Specifications
(Continued)
Parameter
Gain Control Characteristics
Gain Control Range
Gain Control step
state error (at max Attenuation)
Gain step error
RF Input Characteristics
RF Frequency Range
RF Return loss
RF Bandwidth
LO Input Characteristics
lO Frequency Range
lO Return loss
lO drive level
Baseband Inputs
i/q input Bias level
input Bias Current
differential input impedance
Bandwidth
DC Power Requirements
Analog supply Voltage
(VCCMiX, VCCBG, VCCRF, VCCdAC, VCClO)
digital supply Voltage (Vdd3)
idd - total Current Consumption
Power down Current
All must be equal
4.5
3
106
5
3.3
127
5.5
3.5
145
1
V
V
mA
µA
dC
Output Power ±0.5 dB of typ.
1.2
1.3
90
5K||100pF
440
1.4
V
µA
Ohms||pF
MHz
Required 1 nF blocking cap
-9
0
100
5600
-10
+3
MHz
dB
dBm
Requires external matching
with matching specified in table
50
9
5
-15
10
2800
-10
15
MHz
dB
%
Can be adjusted with sPi
-31.5
0.5
±0.5
±0.05
±1
±0.13
0
dB
dB
dB
dB
Conditions
Min.
typ.
Max.
units
10
MOdulAtORs - diReCt quAdRAtuRe - sMt
10 - 2
test conditions:
unless otherwise Specified, the Following test conditions Were used
Parameter
temperature
VGA Attenuation
Baseband input Frequency
Baseband input dC Voltage
Baseband input AC Voltage
Baseband input AC Voltage for OiP3 Measurement
Frequency Offset for Output Noise Measurements
supply
lO input Power
lO input Mode
sideband and Carrier suppression
RF Output Mode
(Peak to Peak differential, i and q)
(Peak to Peak differential, i and q)
Condition
25 °C
0 dB
1 MHz
1.3V
1.4V
290 mV per tone @ 1 & 1.5 MHz
20 MHz
Analog: +5V, digital: +3.3V
0 dBm
differential
uncalibrated
differential
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC795LP5E
v00.0409
SiGe Wideband direct Quadrature
Modulator w/ vGa, 50 - 2800 MHz
calibrated vs. uncalibrated test results
during the uncalibrated Carrier suppression tests, care is taken to ensure that the i/q signal paths from the Vector
signal Generator (VsG) to the device under test (dut) are equal. the “uncalibrated” Carrier suppression plots were
measured at t= -40 °C, +25 °C, and +85 °C.
the “Calibrated” Carrier suppression data was plotted after a manual adjustment of the iP/iN & qP/qN dC offsets
at +25 °C, 5V Vcc, 0 dBm lO input power level, and the RF output frequency set to the midband of the measurement
range. the adjustment settings were held constant during tests over temperature and frequency.
10
MOdulAtORs - diReCt quAdRAtuRe - sMt
typical Performance characteristics, vcc +5v, lo 0 dbm, +25 °c
output Power, output iP3 & Sideband
Suppression vs. Freq. over temperature
[1]
40
OUTPUT POWER (dBm), OUTPUT IP3 (dBm)
OUTPUT IP3
30
0
-10
uncalibrated & calibrated carrier
Feedthrough vs. Freq. over temperature
[1]
-40
UNCALIBRATED
-45
CARRIER FEEDTHROUGH (dBm)
SIDEBAND SUPPRESSION (dBc)
-50
-55
-60
-65
-70
-75
-80
800
CALIBRATED
20
OUTPUT POWER
-20
10
0
+25 C
+85 C
-40 C
-30
-40
SIDEBAND SUPPRESSION
-10
-50
+25 C
+85 C
-40 C
-20
800
850
900
950
1000
1050
1100
1150
FREQUENCY (MHz)
-60
1200
850
900
950
1000
1050
1100
1150
1200
FREQUENCY (MHz)
output Power & output noise @ 1 GHz vs.
vGa attenuation over temperature
[1]
20
+25 C
+85 C
-40 C
-120
10
OUTPUT POWER (dBm)
-130
OUTPUT NOISE @ 20 MHz (dBm/Hz)
carrier Feedthrough & Sideband
Suppression @ 1 GHz vs. vGa attenuation
over temperature
[1]
-50
-55
CARRIER FEEDTHROUGH (dBm)
-60
-65
-70
-75
-80
-85
-90
0
SIDEBAND
SUPPRESSION
-60
4
8
12
16
20
24
28
32
ATTENUATION (dB)
-55
-50
+25 C
+85 C
-40 C
-40
CARRIER
FEEDTHROUGH
OUTPUT POWER
SIDEBAND SUPPRESSION (dBc)
-45
0
-140
-10
-150
-20
-160
-30
OUTPUT NOISE
-170
-40
0
4
8
12
16
20
24
28
-180
32
ATTENUATION (dB)
[1] Output Matched to 1 GHz
10 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC795LP5E
v00.0409
SiGe Wideband direct Quadrature
Modulator w/ vGa, 50 - 2800 MHz
carrier Feedthrough & Sideband
Suppression @ 1 GHz vs. input baseband
amplitude over temperature
[1]
-40
CARRIER
FEEDTHROUGH
CARRIER FEEDTHROUGH (dBm)
-45
-45
SIDEBAND SUPPRESSION (dBc)
OUTPUT NOISE @ 20 MHz (dBm/Hz)
output Power & output noise
@ 1 GHz vs. input baseband amplitude
over temperature
[1]
20
+25 C
+85 C
-40 C
OP1dB 14.3 dBm
OP1dB 14.1 dBm
OP1dB 14.0 dBm
-150
OUTPUT POWER
5
-145
15
OUTPUT POWER (dBm)
-40
10
-50
-50
-55
SIDEBAND
SUPPRESSION
+25 C
+85 C
-40 C
-55
0
OUTPUT NOISE
-155
-60
-60
-5
-65
-65
-10
0.1
1
2
3
-160
-70
0.1
-70
1
2
3
INPUT BASEBAND AMPLITUDE (Vp-p diff)
10
MOdulAtORs - diReCt quAdRAtuRe - sMt
10 - 4
INPUT BASEBAND AMPLITUDE (Vp-p diff)
output Power, output iP3 & Sideband
Suppression vs. Freq. over lo Power
[1]
40
OUTPUT POWER (dBm), OUTPUT IP3 (dBm)
OUTPUT IP3
0
30
-10
uncalibrated & calibrated carrier
Feedthrough vs. Freq. over lo Power
[1]
-40
-45
CARRIER FEEDTHROUGH (dBm)
SIDEBAND SUPPRESSION (dBc)
-50
-55
-60
-65
-70
-75
-80
800
UNCALIBRATED
20
OUTPUT POWER
-20
CALIBRATED
10
-30
0
-10
0 dBm
+3 dBm
-9 dBm
-40
SIDEBAND SUPPRESSION
-50
0 dBm
+3 dBm
-9 dBm
-20
800
850
900
950
1000
1050
1100
1150
-60
1200
850
900
950
1000
1050
1100
1150
1200
FREQUENCY (MHz)
FREQUENCY (MHz)
output Power, output iP3 & Sideband Sup-
pression vs. Freq. over Supply voltage
[1]
40
OUTPUT POWER (dBm), OUTPUT IP3 (dBm)
OUTPUT IP3
30
-10
0
uncalibrated & calibrated carrier Feed-
through vs. Freq. over Supply voltage
[1]
-40
-45
CARRIER FEEDTHROUGH (dBm)
SIDEBAND SUPPRESSION (dBc)
-50
-55
-60
-65
-70
-75
-80
800
UNCALIBRATED
20
OUTPUT POWER
-20
CALIBRATED
10
-30
0
-10
4.5V
5.0V
5.5V
-40
SIDEBAND SUPPRESSION
-50
4.5 V
5.0 V
5.5 V
-20
800
850
900
950
1000
1050
1100
1150
-60
1200
850
900
950
1000
1050
1100
1150
1200
FREQUENCY (MHz)
FREQUENCY (MHz)
[1] Output Matched to 1 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC795LP5E
v00.0409
SiGe Wideband direct Quadrature
Modulator w/ vGa, 50 - 2800 MHz
uncalibrated & calibrated carrier
Feedthrough vs. Freq. over temperature
[1]
-40
UNCALIBRATED
-45
CARRIER FEEDTHROUGH (dBm)
-10
SIDEBAND SUPPRESSION (dBc)
output Power, output iP3 & Sideband
Suppression vs. Freq. over temperature
[1]
40
OUTPUT POWER (dBm), OUTPUT IP3 (dBm)
+25 C
+85 C
-40 C
0
OUTPUT IP3
30
-50
-55
-60
-65
-70
-75
-80
1800
CALIBRATED
+25 C
+85 C
-40 C
1850
1900
1950
2000
2050
2100
2150
2200
20
OUTPUT POWER
10
-20
-30
0
SIDEBAND SUPPRESSION
-40
10
MOdulAtORs - diReCt quAdRAtuRe - sMt
-10
-50
-20
1800
1850
1900
1950
2000
2050
2100
2150
-60
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
output Power & output noise @ 1950 MHz
vs. vGa attenuation MHz over temperature
[1]
20
+25 C
+85 C
-40 C
-120
10
OUTPUT POWER (dBm)
-130
carrier Feedthrough & Sideband
Suppression @ 1950 MHz vs. vGa
attenuation over temperature
[1]
-50
-55
+25 C
+85 C
-40 C
-40
CARRIER
FEEDTHROUGH
OUTPUT NOISE @20MHz (dBm/Hz)
OUTPUT POWER
CARRIER FEEDTHROUGH (dBm)
SIDEBAND SUPPRESSION (dBc)
-60
-65
-70
-75
-80
-85
-90
0
-45
0
-140
-10
-150
-50
-20
-160
SIDEBAND
SUPPRESSION
-55
-30
OUTPUT NOISE
-170
-40
0
4
8
12
16
20
24
28
-180
32
-60
4
8
12
16
20
24
28
32
ATTENUATION (dB)
ATTENUATION (dB)
output Power & output noise
@ 1950 MHz vs. input baseband
amplitude over temperature
[1]
20
15
OUTPUT POWER (dBm)
10
5
0
-5
-10
-15
-20
0.1
-160
1
2
3
INPUT BASEBAND AMPLITUDE (Vp-p diff)
-155
+25 C
+85 C
-40 C
OP1dB 10.9 dBm
OP1dB 11.6 dBm
OP1dB 11.8 dBm
-140
OUTPUT NOISE @ 20 MHz (dBm/Hz)
carrier Feedthrough & Sideband
Suppression @ 1950 MHz vs. input
baseband amplitude over temperature
[1]
-40
CARRIER
FEEDTHROUGH
CARRIER FEEDTHROUGH (dBm)
-45
-35
SIDEBAND SUPPRESSION (dBc)
-30
-145
OUTPUT POWER
-150
-50
-40
OUTPUT NOISE
-55
SIDEBAND
SUPPRESSION
-45
-60
+25 C
+85 C
-40 C
1
2
3
-50
-65
-55
-70
0.1
-60
INPUT BASEBAND AMPLITUDE (Vp-p diff)
[1] Output Matched to 1950 MHz
10 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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