v02.1111
HMC770LP4BE
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Typical Applications
The Hmc770lp4Be is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Features
High Output IP3: +40 dBm
Single Positive Supply: +5V
Low Noise Figure: 2.5 dB
[1]
Differential RF I/O’s
20 Lead 4x4 mm SMT Package: 16mm²
Functional Diagram
General Description
The HMC770LP4BE is a GaAs pHEMT Differential
Gain Block MMIC amplifier covering 40 MHz to 1
GHz and packaged in a 4x4 mm plastic QFN SMT
package. This versatile amplifier can be used as a
cascadable IF or RF gain stage in both 50 Ohm and
75 Ohm applications. The HMC770LP4BE delivers
16 dB gain, and +40 dBm output, with only 2.5 dB
noise figure. Differential I/Os make this amplifier ideal
for transimpedance and SAW filter applications, and
in transceivers where the IF path must be handled
differentially for improved noise performance.
Evaluation PCBs are all available with either SMA
(50Ω) or Type F (75Ω) connectors.
Amplifiers - Driver & GAin Block - smT
Electrical Specifications,
T
A
= +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω
[2]
Parameter
Frequency Range
Gain
[2]
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout = 0 dBm per tone, 1 MHz spacing)
Noise Figure
[2]
Transimpedance
Input Referred Current Noise
[3]
Supply Current 1 (Idd1)
Supply Current 2 (Idd2)
20
12
Min.
Typ.
Zo = 50 Ohms
0.04 - 1
16.5
0.006
17
18
23
40
2.5
-
-
136
134
160
160
4
21
12
Max.
Min.
Typ.
Zo =75 Ohms
0.04 - 1
16
0.008
15
15
23.5
37.5
2.75
700
6
136
134
160
160
4
Max.
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dB
Ohms
pA / √Hz
mA
mA
[1] 1:1 Balun losses have NOT been removed from measurements. See list of materials for eval PCB for the type of balun.
[2] See application circuit
[3] Includes balun loss, no photo diode. See list of materials for eval PCB for the type of balun.
6-1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: Phone: pll@hittite.com
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Gain & Return Loss
[1]
20
Gain vs. Temperature
[1]
20
10
RESPONSE (dB)
GAIN (dB)
S21
S11
S22
15
0
10
-10
+25C
+85C
-40C
-20
5
-30
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
20
20
15
GAIN (dB)
GAIN (dB)
15
10
4.5V
5.0V
5.5V
10
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
5
5
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Return Loss vs. Temperature
[1]
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
Return Loss vs. Vdd
[1]
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
S11
4.5V
5.0V
5.5V
S22
+25C
+85C
-40C
S22
S11
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
[1] Rbias=R1=200 Ohms. See application circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: pll@hittite.com
6-2
plls - sMT
Gain vs. Vdd
[1]
Gain vs. Rbias
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Return Loss vs. Rbias
0
-5
RETURN LOSS (dB)
-10
-15
-20
S11
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
Isolation vs. Rbias
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
S22
-25
-30
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
PLLs - sMT
Noise Figure vs. Temperature
8
[1]
Noise Figure vs. Temperature for Low
Frequencies
[1][2]
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
6
+25C
+85C
-40C
6
+25C
+85C
-40C
4
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
Noise Figure vs. Vdd
[1]
8
Noise Figure vs. Vdd for Low Frequencies
[1][2]
8
NOISE FIGURE (dB)
4
NOISE FIGURE (dB)
6
4.5V
5.0V
5.5V
6
4.5V
5.0V
5.5V
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
[1] Rbias=R1=200 Ohms. See application circuit.
[2] See application circuit for the tune for low frequencies.
6-3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: pll@hittite.com
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Noise Figure vs. Rbias
8
Noise Figure vs. Rbias for Low
Frequencies
[2]
8
NOISE FIGURE (dB)
4
NOISE FIGURE (dB)
6
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
6
Rbias=1.5k Ohms
Rbias=600 Ohms
Rbias=200 Ohms
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
P1dB vs. Temperature
[1]
30
25
20
15
10
5
0
P1dB vs. Vdd
[1]
30
25
20
15
10
5
0
4.5V
5.0V
5.5V
P1dB (dBm)
+25C
+85C
-40C
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
P1dB (dBm)
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
P1dB vs. Rbias
[1]
30
25
20
15
10
5
0
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
P1dB (dBm)
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
[1] Rbias=R1=200 Ohms. See application circuit.
[2] See application circuit for the tune for low frequencies.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: pll@hittite.com
6-4
plls - sMT
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Output IP3 vs. Temperature
[1]
50
45
40
IP3 (dBm)
35
30
25
20
IP3 (dBm)
Output IP3 vs. Vdd
[1]
50
45
40
35
30
25
20
4.5V
5.0V
5.5V
+25C
+85C
-40C
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
PLLs - sMT
Output IP3 vs. Rbias
50
45
40
IP3 (dBm)
Idd vs. Rbias
400
350
300
Idd (mA)
250
200
150
100
4.5 V
5.0 V
5.5 V
35
30
25
20
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
50
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
200
400
600
800
1000
1200
1400
1600
Rbias (Ohm)
[1] Rbias=R1=200 Ohms. See application circuit
6-5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: pll@hittite.com
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