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123191-HMC816LP4E

产品描述board eval hmc816lp4e
产品类别开发板/开发套件/开发工具   
文件大小975KB,共8页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
标准  
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123191-HMC816LP4E概述

board eval hmc816lp4e

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HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Features
low Noise figure: 0.5 dB
High Gain: 22 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
7
Amplifiers - low Noise - smT
Typical Applications
The HmC816lp4e is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• multi-Channel Applications
Functional Diagram
General Description
Electrical Specifications,
T
A
= +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
parameter
Vdd = +3V
min.
Typ.
230 - 450
17
21
0.001
0.5
13
12
10
10
14
15
26
24
34
44
24
13
14
0.9
14
max.
min.
Typ.
450 - 660
17
0.002
0.5
17
10
16
16.5
28
34
44
68
15
16
0.9
19
max.
min.
Typ.
230 - 450
22
0.005
0.5
15
13
19
20
34
97
126
68
18
18
0.9
15
Vdd = +5V
max.
min.
Typ.
450 - 660
19
0.007
0.5
16
10
21
21
37
97
126
0.9
max.
Units
mHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
7-1
O
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
* rbias sets current, see application circuit herein
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
20 Alpha Road, Chelmsford, MA 01824
For price, delivery and to place orders: Hittite Microwave Corporation,
delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from
978-250-3343
subject to change without notice. No
Phone:
its use. Specifications
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
B
SO
The HmC816lp4e is a GaAs pHemT Dual Channel
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G basestation front-end receivers
operating between 230 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC816lp4e shares
the same package and pinout with the HmC817-
lp4e & HmC818lp4e lNAs. The HmC817lp4e can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the lNA for each application.
LE
TE
24 lead 4x4mm QfN package: 16 mm
2

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