HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Features
Noise figure: 0.9 dB
Gain: 19 dB
output ip3: +33 dBm
single supply: +3V to +5V
16 lead 3x3mm QfN package: 9 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC715lp3(e) is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• Access points
Functional Diagram
General Description
Electrical Specifications
O
T
A
= +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V
[1]
parameter
Vdd = +3V
min.
Typ.
2.1 - 2.9
14.5
18
0.01
0.9
11.5
14
10.5
14.5
16
28
47
65
12.5
1.2
15
max.
min.
Typ.
2.3 - 2.7
18
0.01
0.9
11
13.5
15
16.5
28.5
47
65
15
1.2
15.5
max.
min.
Typ.
2.1 - 2.9
19
0.01
0.9
11.5
12.5
19
20
33
95
126
16.5
1.2
16.5
Vdd = +5V
max.
min.
Typ.
2.3 - 2.7
19
0.01
0.9
11
12
19.5
20.5
33.5
95
126
1.2
max.
Units
mHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
[1] rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
B
SO
The HmC715lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G basestation front-end receivers
operating between 2.1 and 2.9 GHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
19 dB gain and +33 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC715lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
LE
TE
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Gain vs. Temperature
[1]
26
24
22
GAIN (dB)
Broadband Gain & Return Loss
[1] [2]
30
24
18
RESPONSE (dB)
12
6
0
-6
-12
-18
-24
-30
0.5
1
1.5
5V
3V
S11
S22
S21
7
Amplifiers - low Noise - smT
7-2
20
18
16
14
12
+25C
+85C
-40C
2
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
5
TE
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.8
3
Gain vs. Temperature
[2]
26
24
22
GAIN (dB)
20
18
16
14
12
2
2.2
+25C
+85C
-40C
LE
0
RETURN LOSS (dB)
-5
-10
-15
2.8
3
-20
2
2.2
-20
-25
ISOLATION (dB)
-30
-35
-40
-45
-50
2.8
3
2
2.2
Input Return Loss vs. Temperature
[1]
+25C
+85C
-40C
SO
2.4
2.6
FREQUENCY (GHz)
+25C
+85C
-40C
2.4
2.6
FREQUENCY (GHz)
2.8
3
B
Output Return Loss vs. Temperature
[1]
Reverse Isolation vs. Temperature
[1]
RETURN LOSS (dB)
O
0
-5
-10
-15
+25C
+85C
-40C
-20
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.4
2.6
FREQUENCY (GHz)
2.8
3
[1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
P1dB vs. Temperature
[1] [2]
23
21
Vdd=5V
7
Amplifiers - low Noise - smT
Noise Figure vs. Temperature
[1] [2] [4]
1.8
1.5
NOISE FIGURE (dB)
1.2
0.9
0.6
0.3
0
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.8
3
Vdd=5V
Vdd=3V
-40C
+85C
+25C
19
P1dB (dBm)
17
15
13
11
9
Vdd=3V
TE
+25C
+85C
-40C
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.8
3
Psat vs. Temperature
[1] [2]
24
22
20
Psat (dBm)
18
16
14
12
Vdd=3V
Vdd=5V
IP3 (dBm)
SO
+25C
+85C
-40C
LE
44
41
38
35
32
29
26
Vdd=5V
Output IP3 vs. Temperature
[1] [2]
+25C
+85C
-40C
Vdd=3V
23
20
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.8
3
10
2
2.2
2.4
2.6
FREQUENCY (GHz)
2.8
3
Output IP3 and Supply Current vs.
Supply Voltage @ 2300 MHz
[3]
B
O
Output IP3 and Supply Current vs.
Supply Voltage @ 2700 MHz
[3]
125
110
95
IP3 (dBm)
80
Idd (mA)
65
38
36
34
32
30
28
26
24
22
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
Idd
IP3
36
34
32
30
28
26
24
22
20
125
110
95
80
Idd (mA)
65
50
35
20
5
5.5
IP3 (dBm)
Idd
IP3
50
35
20
5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
[1] Vdd = 5V, rbias = 2k Ω
[2] Vdd = 3V, rbias = 47kΩ
[4] measurement reference plane shown on evaluation pCB drawing.
[3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Power Compression @ 2300 MHz
[2]
25
20
15
10
5
0
Pout
Gain
PAE
Power Compression @ 2300 MHz
[1]
25
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
-5
-10
-20 -18
Pout
Gain
PAE
7
Amplifiers - low Noise - smT
1.3
1.2
NOISE FIGURE (dB)
1.1
1
0.9
0.8
TE
-5
-10
-20
-17
-14
-11
-8
-5
INPUT POWER (dBm)
30
25
20
15
10
5
0
-5
-10
-20
-15
-10
-5
INPUT POWER (dBm)
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
-16
-14 -12 -10 -8
-6
-4
INPUT POWER (dBm)
-2
0
2
-2
1
Power Compression @ 2700 MHz
[1]
35
Pout (dBm), Gain (dB), PAE (%)
30
25
20
15
10
5
0
-5
-10
-20
-17
-14
-11
-8
-5
-2
INPUT POWER (dBm)
SO
Pout
Gain
PAE
1
4
7
Pout (dBm), Gain (dB), PAE (%)
LE
1.4
1.3
1.2
NOISE FIGURE (dB)
1.1
1
0.9
0.8
GAIN (dB) & P1dB (dBm)
20
P1dB
Gain
Power Compression @ 2700 MHz
[2]
0
5
Gain, Power & Noise Figure
vs. Supply Voltage @ 2300 MHz
[3]
B
P1dB
Gain
NF
Gain, Power & Noise Figure
vs. Supply Voltage @ 2700 MHz
[3]
22
GAIN (dB) & P1dB (dBm)
O
24
22
20
18
16
14
12
10
8
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
18
16
14
NF
0.7
0.6
5.5
12
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
[1] Vdd = 5V, rbias = 2kΩ [2] Vdd = 3V, rbias = 47kΩ
[3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Gain, Noise Figure & Rbias @ 2300 MHz
22
20
18
1.1
1.05
NOISE FIGURE (dB)
1
Vdd=3V
Vdd=5V
7
Amplifiers - low Noise - smT
Output IP3 vs. Rbias @ 2300 MHz
35
32
IP3 (dBm)
GAIN (dB)
29
16
14
12
10
0.95
0.9
0.85
0.8
100000
26
23
Vdd=3V
Vdd=5V
20
100
1000
10000
Rbias (Ohms)
100000
Output IP3 vs. Rbias @ 2700 MHz
38
LE
20
18
16
14
12
10
8
100
1000
GAIN (dB)
100000
Gain, Noise Figure & Rbias @ 2700 MHz
1.4
1.3
NOISE FIGURE (dB)
1.2
1.1
1
0.9
0.8
10000
Rbias (Ohms)
100000
35
Vdd=3V
Vdd=5V
IP3 (dBm)
29
26
SO
10000
Rbias (Ohms)
32
23
100
1000
7-5
O
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
B
TE
100
1000
10000
Rbias (Ohms)
Vdd=3V
Vdd=5V
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