MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
CT35SM-8
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
2
2
4
20.0
φ
3.2
5.0
1.0
q
5.45
w
e
5.45
19.5MIN.
4.4
0.6
2.8
4
wr
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
q
¡V
CES ................................................................................
400V
¡I
CM ....................................................................................
200A
TO-3P
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
V
GE
= 0V
V
CE
= 0V, See notice 4
V
CE
= 0V, tw = 0.5s
See figure 1
Ratings
400
±30
±40
200
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±40V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
7.0
Unit
V
µA
µA
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
200
C
M
= 1000µF
160
MAXIMUM PULSE COLLECTOR CURRENT
2000
PULSE COLLECTOR CURRENT I
CM
(A)
MAIN CAPACITOR C
M
(µF)
1600
120
<
T
C
=
70°C
1200
80
800
40
400
V
CM
= 350V
T
C
<
70°C
=
>
V
GE
=
28V
160
180
200
220
240
0
0
10
20
30
40
50
0
140
GATE-EMITTER VOLTAGE V
GE
(V)
PULSE COLLECTOR CURRENT I
CP
(A)
Figure 1
Figure 2
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
C
M
Vtrig
+
–
V
CM
IGBT GATE V
G
VOLTAGE
R
G
V
CE
V
G
IGBT
Xe TUBE
CURRENT
Ixe
RECOMMEND CONDITION
V
CM
= 330V
I
P
= 180A
C
M
= 800µF
V
GE
= 28V
MAXIMUM CONDITION
360V
200A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if R
G
≥
30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(I
xe
≤
200A : full luminescence condition) of main condenser (C
M
=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
嵌入式系统
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