HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Features
saturated output power:
up to +27.5 dBm @ 15% pAe
High output ip3: +33 dBm
High Gain: 21.5 dB
DC supply: +6V @ 350mA
no external matching required
24 lead 4x4 mm smT package: 16 mm²
Typical Applications
The HmC863lp4e is ideal for:
• point-to-point radios
• point-to-multi-point radios
• VsAT
9
Amplifiers - lineAr & power - smT
• military & space
Functional Diagram
General Description
The HmC863lp4e is a three stage GaAs pHemT
mmiC ½ watt power Amplifier which operates be-
tween 22 and 26.5 GHz. The HmC863lp4e provides
21.5 dB of gain, +27.5 dBm of saturated output pow-
er and 15% pAe from a +6V supply. High output ip3
makes the HmC863lp4e ideal for point-to-point and
point-to-multi-point radio systems as well as VsAT ap-
plications. The rf i/os are DC blocked and matched
to 50 ohms for ease of integration into higher level
assemblies. The HmC863lp4e can also be operated
from a 5V supply with only a slight decrease in output
power & ip3.
Electrical Specifications,
T
A
= +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 350mA
[1]
parameter
frequency range
Gain
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept
Total supply Current (idd)
[1] Adjust Vgg between -2 to 0V to achieve idd = 350mA typical.
[2] measurement taken at +6V @ 350mA, pout / Tone = +14 dBm
(ip3)
[2]
22
19
min.
Typ.
22 - 26.5
21.5
0.032
11
15
24.5
27
33
350
380
max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Gain vs. Temperature
28
26
24
Broadband Gain &
Return Loss vs. Frequency
30
20
RESPONSE (dB)
10
0
-10
-20
-30
-40
20
21
22
23
24
25
GAIN (dB)
S21
S11
S22
22
20
18
16
14
12
+25C
+85C
-40C
9
26
27
26
27
28
29
22
23
24
25
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
22
23
24
25
26
27
-40
22
23
24
25
26
27
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
28
P1dB vs. Supply Voltage
28
26
26
P1dB (dBm)
24
P1dB (dBm)
24
22
+25C
+85C
-40C
22
6.0V
5.5V
5.0V
20
22
23
24
25
26
27
20
22
23
24
25
26
27
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
Amplifiers - lineAr & power - smT
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Psat vs. Supply Voltage
30
Psat vs. Temperature
33
+25C
+85C
-40C
31
28
Psat (dBm)
29
Psat (dBm)
9
Amplifiers - lineAr & power - smT
26
27
25
24
6.0V
5.5V
5.0V
23
22
23
24
25
26
27
22
22
23
24
25
26
27
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
28
Psat vs. Supply Current (Idd)
30
26
P1dB (dBm)
Psat (dBm)
300mA
350mA
400mA
28
24
26
22
24
300mA
350mA
400mA
20
22
23
24
25
26
27
FREQUENCY (GHz)
22
22
23
24
25
26
27
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +14 dBm
38
Output IP3 vs.
Supply Current, Pout/Tone = +14 dBm
38
36
36
IP3 (dBm)
IP3 (dBm)
34
34
32
+25C
+85C
-40C
32
300mA
350mA
400mA
30
30
28
22
23
24
25
26
27
28
22
23
24
25
26
27
FREQUENCY (GHz)
FREQUENCY (GHz)
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Output IM3 @ Vdd = +5V
60
50
Output IP3 vs.
Supply Voltage, Pout/Tone = +14 dBm
38
6.0V
5.5V
5.0V
36
40
IP3 (dBm)
IM3 (dBc)
34
30
32
20
30
10
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
9
16
17
18
19
20
28
22
23
24
25
26
27
0
5
6
7
8
9
10
11
12
13
14
15
FREQUENCY (GHz)
Pout/TONE (dBm)
Output IM3 @ Vdd = +5.5V
60
50
Output IM3 @ Vdd = +6V
60
50
40
40
30
30
20
10
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
20
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
10
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pout/TONE (dBm)
Pout/TONE (dBm)
Power Compression @ 25 GHz
35
Reverse Isolation vs. Temperature
0
-10
Pout (dBm), GAIN (dB), PAE (%)
REVERSE ISOLATION (dB)
30
25
20
15
10
5
0
-15
-12
-9
Pout
Gain
PAE
-20
-30
-40
-50
-60
-70
-80
-90
+25C
+85C
-40C
-6
-3
0
3
6
9
22
23
24
25
26
27
INPUT POWER (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
Amplifiers - lineAr & power - smT
IM3 (dBc)
IM3 (dBc)
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Gain & Power vs.
Supply Voltage @ 25 GHz
32
Gain & Power vs.
Supply Current @ 25 GHz
32
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
30
28
26
24
22
20
18
300
320
340
Gain
P1dB
Psat
30
28
26
24
22
20
18
Gain
P1dB
Psat
9
Amplifiers - lineAr & power - smT
360
380
400
5
5.2
5.4
5.6
5.8
6
Idd (mA)
Vdd (V)
Power Dissipation
4
POWER DISSIPATION (W)
3.5
3
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
2.5
2
1.5
1
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
rf input power (rfin)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 37 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
esD sensitivity (HBm)
6.3V
+26 dBm
150 °C
2.52 w
26.9 C/w
-65 to +150 °C
-55 to +85 °C
Class 0, 150V
Typical Supply Current vs. Vdd
Vdd (V)
+5.0
+5.5
+6.0
idd (mA)
350
350
350
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 350mA at +5.5V
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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