MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
CT30VM-8
OUTLINE DRAWING
1.5MAX.
r
10.5MAX.
Dimensions in mm
1.3
1
13.2 ± 0.5
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
0.5
2.5
2.5
0.5
wr
q
¡V
CES ................................................................................
400V
¡I
CM ....................................................................................
180A
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
TO-220C
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
V
GE
= 0V
V
CE
= 0V, See notice 4
V
CE
= 0V, tw = 0.5s
See figure 1
2.6 ± 0.4
q
w
e
Ratings
400
±30
±40
180
–40 ~ +150
–40 ~ +150
4.5
Unit
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±40V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
7.0
Unit
V
µA
µA
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
200
C
M
= 1000µF
160
MAIN CAPACITOR C
M
(µF)
PULSE COLLECTOR CURRENT I
CM
(A)
MAXIMUM PULSE COLLECTOR CURRENT
2000
T
C
<
50°C
=
1600
120
1200
80
T
C
<
70°C
=
800
40
400
V
CM
= 350V
T
C
<
70°C
=
V
GE
>
28V
=
140
160
180
200
220
0
0
10
20
30
40
50
0
120
GATE-EMITTER VOLTAGE V
GE
(V)
PULSE COLLECTOR CURRENT I
CP
(A)
Figure 1
Figure 2
APPLICATION EXAMPLE
IXe
TRIGGER Vtrig
SIGNAL
C
M
Vtrig
+
–
V
CM
IGBT GATE V
G
VOLTAGE
R
G
V
CE
V
G
IGBT
Xe TUBE
CURRENT
Ixe
RECOMMEND CONDITION
V
CM
= 330V
I
P
= 160A
C
M
= 800µF
V
GE
= 28V
MAXIMUM CONDITION
360V
180A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if R
G
≥
30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(I
xe
≤
180A : full luminescence condition) of main condenser (C
M
=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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