MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
CT30SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
5.0
2
2
19.5MIN.
4
20.0
φ
3.2
4.4
1.0
q
5.45
w
e
5.45
0.6
2.8
4
wr
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
¡V
CES ................................................................................
600V
¡I
C .........................................................................................
30A
¡High
Speed Switching
¡Low
V
CE
Saturation Voltage
q
TO-3P
APPLICATION
AC & DC motor controls, General purpose invert-
ers, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
P
C
T
j
T
stg
—
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
V
GE
= 0V
V
CE
= 0V
V
CE
= 0V
Conditions
Ratings
600
±20
±30
30
60
250
–40 ~ +150
–40 ~ +150
4.8
Unit
V
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) CES
I
GES
I
CES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
R
th (j-c)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
GE
=
±30V,
V
CE
= 0V
V
CE
= 600V, V
GE
= 0V
I
C
= 3.0mA, V
CE
= 10V
I
C
= 30A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Limits
Min.
600
—
—
4.5
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
6.0
2.5
1480
180
54
30
135
135
250
—
Max.
—
±0.5
1
7.5
3.0
—
—
—
—
—
—
—
0.50
Unit
V
µA
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°C/W
V
CC
= 300V, Resistance load,
I
C
= 30A, V
GE
= 15V, R
GE
= 20Ω
Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
10
T
j
= 25°C
50
COLLECTOR CURRENT I
C
(A)
V
GE
= 20V
OUTPUT CHARACTERISTICS
(TYPICAL)
15V
12V
T
j
= 25°C
11V
40
8
30
10V
6
20
9V
4
I
C
= 60A
30A
10A
10
8V
2
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
50
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE
(V)
5
4
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25°C
V
CE
= 10V
T
j
= 25°C
40
3
30
2
20
1
10
0
0
10
20
30
40
50
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
CAPACITANCE Cies, Coes, Cres (pF)
SWITCHING TIME (ns)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
4
10
7
5
3
2
Cies
10
3
7
5
3
2
10
2
7
5
3
T
j
= 25°C
2
V
GE
= 0V
10
1
f = 1MH
Z
Coes
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1 0
10
2 3
5 7 10
1
2 3
5 7 10
2
t
f
t
d(off)
T
j
= 25°C
V
CC
= 300V
V
GE
= 15V
R
G
= 20Ω
t
r
t
d(on)
Cres
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
V
CC
= 200V
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
7
5
3
2
16
300V
10
–1
7
5
3
2
7
5
3
2
12
8
10
–2
7
5
3
2
10
–2
7
5
3
2
4
0
0
20
40
60
80
100
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
PULSE WIDTH t
w
(s)
Feb.1999
GATE CHARGE Q
g
(nc)
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