Markets
• Satellite television
receivers low noise
block converters (LNB)
• Cellular telephone
infrastructure and
handsets
• Wireless local area
networks (WLAN)
• Automotive
• Remote meter reading
for the Smart Grid
• Test and measurement
• Military
communications
• Cable television (CATV)
• Point-to-point
microwave radios
• Land mobile radio
systems
• Wireless microwave
access (WiMAX)
• Passive optical
networks (PON)
PIN, Schottky, Varactor Diodes
Select diodes available from stock for prototype or high volume production
Skyworks Solutions offers a select group of diodes from our diverse diode offering in stock
and ready for immediate design into your demanding applications.
Select diodes include the most popular PIN, Schottky and tuning varactor diodes, readily
available to ship in 3k reels from stock. These devices provide excellent performance and
even better value for applications including low noise block converters (LNB), multiswitches,
wireless local area networks (WLAN), cellular telephone networks, cable television (CATV),
automotive, test and measurement equipment, land mobile radio and more.
PIN Diodes for Switch and Attenuator Applications
Features
Switch PIN Diodes
SMP1345-040LF
SMP1340-079LF
SMP1321-005LF
SMP1302-085LF
Attenuator PIN Diode
SMP1307-027LF
Low distortion, 4 PIN diode configuration
CATV, PON and more
High isolation
Fast switching
High isolation
High power handling
General
General
LNB multiswitch and more
Land mobile radio, WiMAX, more
Markets
Schottky Diodes for Detector and Mixer Applications
Detector Diodes
SMS7630-079LF
SMS7621-079LF
SMS7621-006LF
SMS3922-079LF
SMS3923-011LF
Features
Lowest barrier height for best sensitivity
Excellent sensitivity and low capacitance
Series pair
Low barrier height with high breakdown voltage
Medium barrier height
Markets
WLAN and more
General
LNB and more
General
General
Tuning Varactor Diodes for VCO, Voltage Tuned Filters and
Phase Shifter Applications
Features
Hyperabrupt Diodes
SMV1234-011LF
SMV1247-079LF
SMV1249-079LF
SMV1255-079LF
Abrupt Diode
SMV1413-079LF
Low resistance 0.35 Ω, high Q 2400 & low capacitance
6.4 pF @ 1 V, 1.75 pF @ 30 V
General
Low capacitance 6.3 pF @ 1 V, 2 pF @ 6 V, low resistance 0.8 Ω
Low capacitance 7 pF @ 0.3 V, 0.7 pF @ 4.7 V, high Q 1500
Medium capacitance 31 pF @ 0.3 V, 2.6 pF @ 4.7 V
High capacitance 64 pF @ 0.3 V, 5.2 pF @ 4.7 V
General
General
General
General
Markets
BUY
NOW
Innovation to Go
TM
New! Free Designer Kits
Select products and sample/designer
kits available for purchase online.
www.skyworksinc.com
PIN Diodes
Features
• Low capacitance for high isolation
• Low resistance
• Low distortion
Skyworks select PIN diodes are some of the most widely
used PIN diodes in the world, for applications which
range from RF switching in satellite television receiver low
noise block converters (LNB) to automotive remote garage
door openers to cable television automatic level controls.
PIN diodes are three layer diodes, comprised of a heavily
doped anode (the “P” layer) and a heavily doped cathode
(the “N” layer) separated by a virtually undoped intrinsic
layer (the “I” layer). Under forward bias, charge carriers
from the P and the N layers are forced into the I layer,
which reduces its RF impedance. When a reverse bias
voltage is applied across the PIN diodes, all free charge
carriers are removed from the I layer, thereby causing its
RF impedance to increase. This variable RF impedance
versus DC or low frequency bias signal allows the diode
to be used in RF switching circuits, in which the PIN diode
is either heavily forward-biased or reverse biased, or in RF
attenuation circuits, in which case the PIN diode is utilized
as a continuously-variable RF resistance by controlling the
magnitude of the DC bias current through the diode.
I
CTRL1
RF
Common
I
CTRL2
L1
V
TUNE
C8
C1
RF
R1
C6
R2
C5
RF
SMP1307-027LF
R6
C7
C2
R3
R8
R7
R4
R5
V
REF
C9
C4
Wide Bandwidth PIN Diode Variable Attenuator
Bias 1
RF
Bypass
RF
Choke
ANT
Bias 1
RF
Bypass
DC
Block
Tx
RF
Choke
DC
Block
Rx
DC
Block
SMP1302-085LF
DC
Block
SMP1302-085LF
High Power SPDT PIN Switch
L1
C1
J1
D1
SMP1345-040LF
SMP1345-079LF
C2
L3
C3
J2
D2
L2
SMP1345-040LF
SMP1345-079LF
Wide Bandwidth Single Pole Double Throw Switch
PIN Diodes for Switch and Attenuator Applications
Product Description
High isolation switching PIN diode
Fast switching/high isolation PIN diode
High isolation (LNB/multiswitch) PIN diode
High power shunt PIN diode
Low distortion/high IP3 attenuator PIN diode
Key Features
Very low capacitance 0.14 pF, isolation 40 dB
Low capacitance, low series resistance
Low capacitance, series pair
Power handling to 50 W CW
Low distortion, 4 PIN diode attenuator
Package (mm)
0402 1 x 0.6 x 0.46
SC-79 1.6 x 0.8 x 0.6
SOT-23 2.37 x 2.92 x 1.0
QFN 2 x 2 x 0.9
SOT-5 2.8 x 2.9 x 1.8
Part Number
SMP1345-040LF
SMP1340-079LF
SMP1321-005LF
SMP1302-085LF
SMP1307-027LF
Tuning Varactor Diodes
Features
• Large available change in capacitance for wide
bandwidth
• Low resistance for low loss
Skyworks series of select silicon tuning varactor diodes
are used as the electrical tuning elements in voltage
controlled oscillators (VCOs), voltage variable analog
phase shifters and voltage tuned filters (VTFs). This family
of diodes includes abrupt junction tuning varactors,
useful for low loss, narrow band circuits, and hyperabrupt
junction varactors, useful for wide bandwidth VCOs and
VTFs and wide phase range variable phase shifters.
Tuning varactors are pn junction diodes. The depletion
region that forms at the junction of the diode acts as a
nearly-ideal insulator, which separates the highly-doped
anode from the cathode layer, thus forming a parallel
plate capacitor. The thickness of the depletion layer can
be increased by applying a reverse bias voltage to the
diode.
Varactor Common
Cathode Pair
RF
Choke
L
C2
V
CC
Varactor
Varactor
The cathode layer’s doping profile is very carefully
designed to produce a tightly-controlled capacitance
versus reverse bias voltage performance characteristic.
The cathode layer of an abrupt junction diode has
uniform dopant concentration throughout its thickness,
which results in a low series resistance and moderately
large change in capacitance versus bias voltage. By
contrast, the doping concentration of cathode layer of
hyperabrupt varactor diode is designed to change by
several orders of magnitude, typically over the depth of
a few microns. This non-constant dopant concentration
versus depth of the hyperabrupt diode’s cathode layer
produces a much larger available change in capacitance
versus reverse voltage, necessary for wide bandwidth or
phase shift range applications.
RF Input
RF Output
V
CONTROL
Variable Phase Shifter
V
R
Typical Voltage Controlled Oscillator with a
Common Cathode Pair of Tuning Varactors
V
CONTROL
RF Input
RF Output
Resonators
Voltage Tuned Filter
Tuning Varactor Diodes for VCO, Voltage Tuned Filters and Phase Shifter Applications
Product Description
Low capacitance tuning varactor diode
Low capacitance & high Q tuning varactor diode
Medium capacitance & wide tuning range diode
High capacitance & wide tuning range diode
Low resistance & high Q abrupt tuning diode
Key Features
Low capacitance 6.3 pF @ 1 V, 2 pF @ 6 V,
low resistance 0.8 Ω
Low capacitance 7 pF @ 0.3 V, 0.7 pF @ 4.7 V, high Q 1500
Medium capacitance 31 pF @ 0.3 V, 2.6 pF @ 4.7 V
High capacitance 64 pF @ 0.3 V, 5.2 pF @ 4.7 V
Low resistance 0.35 Ω, high Q 2400 &
low capacitance 6.4 pF. @ 1 V, 1.75 pF @ 30 V
Package (mm)
SOD-323 2.52 x 1.25 x 1.04
SC-79 1.6 x 1.8 x 0.6
SC-79 1.6 x 1.8 x 0.6
SC-79 1.6 x 1.8 x 0.6
SC-79 1.6 x 1.8 x 0.6
Part Number
SMV1234-011LF
SMV1247-079LF
SMV1249-079LF
SMV1255-079LF
SMV1413-079LF
Schottky Diodes
Features
• Low capacitance for high frequency operation
• Excellent sensitivity
• High reverse breakdown voltage
Skyworks series of select silicon Schottky diodes are
optimized for use as detector and mixer diodes at
frequencies from below 10 MHz to higher than 20 GHz.
This family of products includes medium, low and zero
bias detector (ZBD) barrier height Schottky junctions with
low junction capacitance and low series resistance.
Schottky junctions are formed by depositing specific
metals on either n-type-doped silicon (low or medium
barrier height) or on p-type-doped silicon (ZBD barrier
height). The characteristics of the diode are determined
by the type of metal deposited on the semiconductor
material as well as the type of dopant in the
semiconductor layer, among other parameters.
Schottky
Detector
Diode
RF Input
RF
choke
Filter
Capacitor
Detected
Output
Filter
Resistor
Single Schottky Diode Detector
Schottky Diodes for Detector and Mixer Applications
Product Description
Zero biased detector Schottky diode
Detector Schottky diode
Series pair detector Schottky diode
Low barrier detector Schottky diode
Detector or mixer Schottky diode
Key Features
Lowest barrier height for best sensitivity
Low barrier height and low capacitance
Low barrier height and low capacitance, for voltage doubler detectors
Low barrier height with breakdown voltage >8 V
Medium barrier height with voltage breakdown >20 V
Package (mm)
SC-79 1.6 x 1.8 x 0.6
SC-79 1.6 x 1.8 x 0.6
SOT-23 2.37 x 2.92 x 1.0
SC-79 1.6 x 1.8 x 0.6
SOT-23 2.37 x 2.92 x 1.0
Part Number
SMS7630-079LF
SMS7621-079LF
SMS7621-006LF
SMS3922-079LF
SMS3923-011LF
Green Initiative
™
™
Through our Green Initiative, we are committed to manufacturing products that comply with global
government directives and industry requirements.
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at
www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
sales@skyworksinc.com.
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990
Europe: 33 (0)1 41443660 • Fax: (781) 376-3100
Email: sales@skyworksinc.com •
www.skyworksinc.com
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