MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20ASJ-8
STROBE FLASHER USE
CT20ASJ-8
OUTLINE DRAWING
1.5 ± 0.2
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
5.5 ± 0.2
1.0MAX.
1.0
0.9MAX.
2.3MIN.
10MAX.
0.5 ± 0.2
2.3
2.3
0.8
2.3
1
2
3
wr
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
q
¡V
CES ...............................................................................
400V
¡I
CM ....................................................................................
130A
¡Drive
Voltage
V
GE
=4V
¡Small
Package
MP-3
MP-3
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
V
GE
= 0V
Conditions
Ratings
400
±6
±8
130
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
°C
°C
See figure 1
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±6V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
1.5
Unit
V
µA
µA
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20ASJ-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
160
C
M
= 400µF
PULSE COLLECTOR CURRENT I
CM
(A)
120
80
40
T
C
≤
70°C
0
0
2
4
6
8
GATE-EMITTER VOLTAGE V
GE
(V)
Figure 1
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
C
M
Vtrig
+
–
V
CM
IGBT GATE V
G
VOLTAGE
R
G
V
CE
V
G
IGBT
Xe TUBE
CURRENT
Ixe
RECOMMEND CONDITION
V
CM
= 330V
I
CP
= 120A
C
M
= 300
µ
F
V
GE
= 5V
MAXIMUM CONDITION
350V
130A
400
µ
F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 0.1A.
(In general, it is satisfied if R
G
≥
30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(I
xe
≤
130A : full luminescence condition) of main condenser (C
M
=400µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
stm32/stm8
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