MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA08N1317M
135-175MHz 8W 9.6V PORTABLE RADIO
BLOCK DIAGRAM
2
3
DESCRIPTION
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
for 9.6-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=9.6V, V
GG
=0V)
• P
out
>8W @ V
DD
=9.6V, V
GG
=3.5V, P
in
=20mW
•
η
T
>50% @ P
out
=8W (V
GG
control), V
DD
=9.6V, P
in
=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA08N1317M-E01
RA08N1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA08N1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA08N1317M
RATING
16
4
30
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<3.5V
V
DD
<9.6V, P
in
=0mW
f=135-175MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=4.8-15V, P
in
=10-30mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
V
DD
=13.2V, P
in
=20mW, P
out
=8W (V
GG
control),
Load VSWR=20:1
P
out
=8W (V
GG
control),
V
DD
=9.6V,
P
in
=20mW
1
No parasitic oscillation
No degradation or
destroy
V
DD
=9.6V,V
GG
=3.5V, P
in
=20mW
CONDITIONS
MIN
135
8
50
TYP
MAX
175
UNIT
MHz
W
%
-25
4:1
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA08N1317M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA08N1317M
2
nd
, 3 HARMONICS versus FREQUENCY
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
14
OUTPUT POWER P
out
(W)
12
INPUT VSWR
ρ
in
(-)
10
8
6
4
2
0
130
140
150
160
170
FREQUENCY f(MHz)
ρ
in
@P
out
=8W
V
DD
=9.6V
P
i n
=20mW
P
o u t
@V
GG
=3.5V
140
120
TOTAL EFFICIENCY
η
T
(%)
100
η
T
@P
out
=8W
-20
HARMONICS (dBc)
-30
-40
-50
-60
-70
130
140
150
160
170
FREQUENCY f(MHz)
180
3
@P
out
=8W
rd
V
DD
=9.6V
P
i n
=20mW
nd
80
60
40
20
0
180
2
@P
out
=8W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
40
30
20
10
0
-15
-10 -5
0
5
10 15
INPUT POWER P
in
(dBm)
20
I
DD
f=135MHz,
V
DD
=9.6V,
V
GG
=3.5V
Gp
P
o u t
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
Gp
5
4
3
2
1
0
5
P
out
40
30
20
10
0
-15
-10
-5
0
5
I
D D
4
3
2
f=160MHz,
V
D D
=9.6V,
V
G G
=3.5V
1
0
20
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
40
30
20
10
0
-15
I
D D
f=175MHz,
V
DD
=9.6V,
V
GG
=3.5V
Gp
P
out
5
4
3
2
1
0
20
DRAIN CURRENT I
DD
(A)
-10 -5
0
5
10 15
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
D D
f=135MHz,
V
G G
=3.5V,
P
i n
=20mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
P
out
f=160MHz,
V
GG
=3.5V,
P
i n
=20mW
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
I
DD
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
1
0
RA08N1317M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT
I
DD
(A)
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA08N1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
D D
f=175MHz,
V
G G
=3.5V,
P
i n
=20mW
6
DRAIN CURRENT I
DD
(A)
5
P
out
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
14
OUTPUT POWER P
out
(W)
12
10
8
6
4
2
0
1
1.5
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
I
D D
f=135MHz,
V
DD
=9.6V,
P
i n
=20mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
7
DRAIN CURRENT I
DD
(A)
6
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
14
12
10
8
6
4
2
0
1
1.5
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
I
DD
f=160MHz,
V
DD
=9.6V,
P
in
=20mW
7
DRAIN CURRENT I
DD
(A)
6
P
o u t
5
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
14
OUTPUT POWER P
out
(W)
12
10
8
6
4
2
0
1
1.5
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
I
D D
f=175MHz,
V
DD
=9.6V,
P
i n
=20mW
P
out
7
DRAIN CURRENT I
DD
(A)
6
5
4
3
2
1
0
RA08N1317M
MITSUBISHI ELECTRIC
4/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA08N1317M
OUTLINE DRAWING
(mm)
30.0
±0.2
(1.7)
(4.4)
26.6
±0.2
21.2
±0.2
2-R1.5
±0.1
3.0
±0.2
10.0
±0.2
6.0
±0.2
6.0
±0.2
Ø0.45
±0.15
1
6.0
±1
2
3
4
6.1
±1
13.7
±1
18.8
±1
23.9
±1
3.5
±0.2
(5.4)
2.3
±0.4
1.5
±0.2
3.0
±0.2
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA08N1317M
MITSUBISHI ELECTRIC
5/9
7.4
±0.2
5
23 Dec 2002
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