MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M4452M
BLOCK DIAGRAM
2
3
440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M4452M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 440- to 520-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=7.2V, V
GG
=0V)
• P
out
>7W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=50mW
•
η
T
>40% @ P
out
=6.5W (V
GG
control), V
DD
=7.2V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M4452M-E01
RA07M4452M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M4452M
MITSUBISHI ELECTRIC
1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M4452M
RATING
9.2
4
70
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<3.5V
V
DD
<7.2V, P
in
=0mW
f=440-520MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=4.0-9.2V, P
in
=25-70mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
V
DD
=9.2V, P
in
=50mW, P
out
=7W (V
GG
control),
Load VSWR=20:1
P
out
=6.5W (V
GG
control),
V
DD
=7.2V,
P
in
=50mW
1
No parasitic oscillation
No degradation or
destroy
V
DD
=7.2V,V
GG
=3.5V, P
in
=50mW
CONDITIONS
MIN
440
7
40
TYP
MAX
520
UNIT
MHz
W
%
-25
4:1
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M4452M
MITSUBISHI ELECTRIC
2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M4452M
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
9
out
(W)
2
nd
, 3 HARMONICS versus FREQUENCY
100
-20
-30
TOTAL EFFICIENCY
η
T
(%)
HARMONICS (dBc)
-40
-50
-60
V
DD
=7.2V
P
in
=50mW
ρ
in
(-)
8
7
6
5
4
3
2
1
0
430
P
out
@V
GG
=3.5V
90
80
70
60
OUTPUT POWER P
INPUT VSWR
η
T
@P
out
=6.5W
V
DD
=7.2V
P
in
=50mW
50
40
30
20
10
0
530
2
nd
@P
out
=6.5W
ρ
in
@P
out
=6.5W
3
@P
out
=6.5W
-70
430
rd
450
470
490
510
FREQUENCY f(MHz)
450
470
490
FREQUENCY f(MHz)
510
530
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
10
8
DRAIN CURRENT
I
DD
(A)
6
4
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
I
DD
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
2
0
f=480MHz,
V
DD
=7.2V,
V
GG
=3.5V
P
out
Gp
40
POWER GAIN Gp(dB)
30
20
f=440MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
10
8
6
4
DRAIN CURRENT
8
f=480MHz,
V
GG
=3.5V,
P
in
=50mW
P
out
OUTPUT POWER P
I
DD
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
2
0
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
40
30
Gp
f=520MHz,
V
DD
=7.2V,
V
GG
=3.5V
P
out
10
8
6
DRAIN CURRENT
I
DD
(A)
20
I
DD
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
8
out
(W)
16
14
12
10
8
6
4
2
0
2
3
4
5
6
7
8
DRAIN VOLTAGE V
DD
(V)
9
10
I
DD
14
12
10
8
6
4
2
0
2
DD
(A)
P
out
P
out
OUTPUT POWER P
DRAIN CURRENT I
OUTPUT POWER P
4
I
D D
2
4
2
0
3
4
5
6
7
8
DRAIN VOLTAGE V
D
(V)
D
9
10
0
RA07M4452M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT I
DD
(A)
f=440MHz,
V
GG
=3.5V,
P
i n
=50mW
6
6
I
DD
(A)
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M4452M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
out
(W)
14
12
10
8
6
4
2
0
2
f=520MHz,
V
GG
=3.5V,
P
i n
=50mW
P
out
8
OUTPUT POWER P
I
D D
4
2
0
3
4
5
6
7
8
DRAIN VOLTAGE V
D D
(V)
9
10
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
out
(W)
DRAIN CURRENT I
DD
(A)
6
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
5
DD
(A)
out
(W)
12
10
8
6
4
2
0
1
1.5
2
2.5
3
GATE VOLTAGE V
GG
(V)
3.5
4
f=480MHz,
V
DD
=7.2V,
P
in
=50mW
6
5
P
out
10
8
6
4
2
0
1
P
out
OUTPUT POWER P
DRAIN CURRENT I
3
2
1
0
I
DD
3
2
1
0
1.5
2
2.5
3
GATE VOLTAGE V (V)
GG
3.5
4
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
out
(W)
6
f=520MHz,
V
DD
=7.2V,
P
i n
=50mW
P
out
10
8
6
4
2
0
1
5
4
I
D D
3
2
1
0
DD
(A)
OUTPUT POWER P
1.5
2
2.5
3
GATE VOLTAGE V (V)
GG
3.5
4
RA07M4452M
MITSUBISHI ELECTRIC
4/9
DRAIN CURRENT I
DRAIN CURRENT I
I
D D
OUTPUT POWER P
4
4
DD
(A)
f=440MHz,
V
DD
=7.2V,
P
i n
=50mW
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M4452M
OUTLINE DRAWING
(mm)
30.0
±0.2
(1.7)
(4.4)
26.6
±0.2
21.2
±0.2
2-R1.5
±0.1
3.0
±0.2
10.0
±0.2
6.0
±0.2
6.0
±0.2
Ø0.45
±0.15
1
6.0
±1
2
3
4
6.1
±1
13.7
±1
18.8
±1
23.9
±1
3.5
±0.2
(5.4)
2.3
±0.4
1.5
±0.2
3.0
±0.2
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA07M4452M
MITSUBISHI ELECTRIC
5/9
7.4
±0.2
5
25 April 2003
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
