PD - 9.1320B
IRLI3803
HEXFET
®
Power MOSFET
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 30V
R
DS(on)
= 0.006Ω
G
I
D
= 76A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
76
54
470
63
0.42
±16
610
71
6.3
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
2.4
65
Units
°C/W
8/25/97
IRLI3803
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Min.
30
–––
–––
–––
1.0
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
230
29
35
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.006
V
GS
= 10V, I
D
= 40A
Ω
0.009
V
GS
= 4.5V, I
D
= 34A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 71A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
140
I
D
= 71A
41
nC
V
DS
= 24V
78
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 15V
–––
I
D
= 71A
ns
–––
R
G
= 1.3Ω, V
GS
= 4.5V
–––
R
D
= 0.20Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
5000 –––
V
GS
= 0V
1800 –––
pF
V
DS
= 25V
880 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
120
450
76
A
470
1.3
180
680
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 40A, V
GS
= 0V
T
J
= 25°C, I
F
= 71A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
I
SD
≤
71A, di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
t=60s, ƒ=60Hz
max. junction temperature. ( See fig. 11 )
T
J
≤
175°C
V
DD
= 15V, starting T
J
= 25°C, L = 180µH
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRL3803 data and test conditions
R
G
= 25Ω, I
AS
= 71A. (See Figure 12)
IRLI3803
10000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.0V
TOP
10000
I
D
, D ra in -to -S o u rce C u rre n t (A )
1000
I
D
, D ra in -to -S o u rce C u rre n t (A )
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
TOP
100
100
10
10
1
1
2.0V
0.1
0.1
2.0 V
0.01
0.1
1
20 µ s PU LSE W ID TH
T
J
= 2 5°C
10
A
0.01
0.1
1
2 0µ s PU L SE W ID TH
T
J
= 1 75 °C
10
A
100
100
V
D S
, Drain-to-Source V oltage (V )
V
D S
, Drain-to-S ource Voltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
I
D
, D r ain- to-S ourc e C urre nt (A )
T
J
= 2 5 °C
100
T
J
= 1 7 5 °C
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= 12 0A
1.5
10
1.0
1
0.5
0.1
0.01
2.0
3.0
4.0
5.0
V
DS
= 2 5 V
2 0µ s PU L SE W ID TH
6.0
7.0
8.0
9.0
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -S ource V olta ge (V )
T
J
, Junction T emperature (°C)
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLI3803
10000
V
G S
, G a te -to -S o u rce V o lta g e (V )
8000
V
GS
C
iss
C
rs s
C
is s C
os s
=
=
=
=
0V ,
f = 1 MH z
C
gs
+ C
gd
, C
ds
SH O R TED
C
gd
C
ds
+ C
gd
15
I
D
= 71A
V
DS
= 24 V
V
DS
= 15 V
12
C , C a p a c ita n c e (p F )
6000
C
os s
9
4000
6
C
rs s
2000
3
0
1
10
100
A
0
0
40
80
FO R TEST CIR CU IT
SEE FIG UR E 13
120
160
A
200
V
D S
, D rain-to-S ource Voltage (V )
Q
G
, T otal Gate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R e ve rs e D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
1 0µs
T
J
= 17 5°C
100
I
D
, D ra in C u rre n t (A )
100
1 00µs
T
J
= 2 5°C
1 ms
10
0.4
0.8
1.2
1.6
2.0
2.4
V
G S
= 0 V
2.8
A
10
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le Pulse
10
10 ms
100
A
3.2
V
S D
, Source-to-D rain V oltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRLI3803
80
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
60
R
G
-
V
DD
4.5V
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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