PD - 91301D
IRL3803
HEXFET
®
Power MOSFET
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 30V
G
S
R
DS(on)
= 0.006Ω
I
D
= 140A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
140
98
470
200
1.3
±16
610
71
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.75
––––
62
Units
°C/W
1/5/04
IRL3803
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.006
V
GS
= 10V, I
D
= 71A
Ω
0.009
V
GS
= 4.5V, I
D
= 59A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 71A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
140
I
D
= 71A
41
nC
V
DS
= 24V
78
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 15V
–––
I
D
= 71A
ns
–––
R
G
= 1.3Ω, V
GS
= 4.5V
–––
R
D
= 0.20Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 5000 –––
V
GS
= 0V
––– 1800 –––
pF
V
DS
= 25V
––– 880 –––
ƒ = 1.0MHz, See Fig. 5
Min.
30
–––
–––
–––
1.0
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
230
29
35
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 140
showing the
A
G
integral reverse
––– ––– 470
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 71A, V
GS
= 0V
––– 120 180
ns
T
J
= 25°C, I
F
= 71A
––– 450 680
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
S
Repetitive rating; pulse width limited by
V
DD
= 15V, starting T
J
= 25°C, L = 180µH
max. junction temperature. ( See fig. 11 )
R
G
= 25Ω, I
AS
= 71A. (See Figure 12)
I
SD
≤
71A, di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3803
10000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
TOP
10000
I
D
, D rain-to-S ource C urrent (A )
1000
100
I
D
, Drain-to-Source Current (A )
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
TOP
100
10
10
1
1
2.0V
0.1
2 .0 V
0.01
0.1
1
0.1
2 0µ s P U LS E W ID T H
T
J
= 2 5°C
10
A
100
0.01
0.1
1
2 0µ s P U LS E W ID TH
T
J
= 1 75 °C
10
V
D S
, D rain-to-S ource V oltage (V )
100
A
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics,
T
J
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
J
= 175
o
C
1000
2.0
I
D
, D rain-to-So urce C urren t (A )
T
J
= 2 5°C
100
T
J
= 1 75 °C
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 1 20 A
1.5
10
1.0
1
0.5
0.1
0.01
2.0
3.0
4.0
5.0
V
DS
= 2 5V
2 0µ s P U L S E W ID TH
6.0
7.0
8.0
9.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL3803
10000
8000
6000
C
oss
V
G S
, G a te-to-S ou rc e V o ltag e (V )
V
GS
C
iss
C
C
iss C
rs s
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
15
I
D
= 7 1A
V
D S
= 2 4V
V
D S
= 1 5V
12
C , Capacitance (pF)
9
4000
6
C
rss
2000
3
0
1
10
100
A
0
0
40
80
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
120
160
A
200
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
10µ s
T
J
= 17 5°C
100
I
D
, D rain Current (A )
100
100µ s
T
J
= 25 °C
1m s
10
0.4
0.8
1.2
1.6
2.0
2.4
V
G S
= 0V
2.8
A
10
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
100
3.2
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL3803
140
LIMITED BY PACKAGE
120
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
100
-
V
DD
80
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
60
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
20
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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