DISCRETE SEMICONDUCTORS
DATA SHEET
M3D743
BZA900A-series
Quadruple ESD transient voltage
suppressor
Product specification
2001 Sep 03
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
FEATURES
•
ESD rating >8 kV, according to IEC61000-4-2
•
SOT665 surface mount package
•
Common anode configuration.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA956A
BZA962A
BZA968A
MARKING CODE
Z1
Z2
Z3
PINNING
PIN
1
2
3
4
5
cathode 1
BZA900A-series
DESCRIPTION
common anode
cathode 2
cathode 3
cathode 4
handbook, halfpage
5
4
1
3
2
4
5
1
2
3
MGW315
Fig.1 Simplified outline (SOT665) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
total power dissipation
non repetitive peak reverse power
dissipation:
BZA956A
BZA962A
BZA968A
T
stg
T
j
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
storage temperature
junction temperature
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
note 2; see Fig.5
square pulse; t
p
= 1 ms; see Fig.3
−
−
−
−65
−
16
15
14
+150
150
W
W
W
°C
°C
−
−
−
−
note 1
200
4
335
mA
mA
A
mW
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
non-repetitive peak forward current t
p
= 1 ms; square pulse
2001 Sep 03
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder
point; note 1
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
BZA900A-series
VALUE
370
135
125
UNIT
K/W
K/W
K/W
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA956A
BZA962A
BZA968A
Table 1
Per type; BZ956A to BZA968A
T
j
= 25
°C
unless otherwise specified.
TYPE
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 1 mA
DIFFERENTIAL
TEMP.
DIODE CAP.
RESISTANCE
COEFF.
C
d
(pF)
S
Z
(mV/K) at at f = 1 MHz;
r
dif
(Ω)
at I
Z
= 1 mA
I
Z
= 1 mA
V
R
= 0
MAX.
400
300
200
TYP.
0.3
1.6
2.2
MAX.
125
105
90
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A) at t
p
= 1 ms;
T
amb
= 25
°C
MAX.
2.2
2.1
2.0
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
1000
500
100
nA
nA
nA
I
F
= 200 mA
CONDITIONS
MAX.
1.3
V
UNIT
MIN.
BZA956A
BZA962A
BZA968A
5.32
5.89
6.46
TYP.
5.6
6.2
6.8
MAX.
5.88
6.51
7.14
2001 Sep 03
3
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
GRAPHICAL DATA
BZA900A-series
handbook, halfpage
10
MGW318
10
2
handbook, halfpage
PZSM
(W)
MGW319
I ZSM
(A)
BZA956A
BZA956A
BZA962A
1
BZA968A
10
BZA962A
BZA968A
10
−1
10
−2
10
−1
1
t p (ms)
10
1
10
−2
10
−1
1
t p (ms)
10
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
120
MGW320
MGT586
handbook, halfpage
400
Cd
(pF)
80
Ptot
(mW)
300
BZA956A
BZA962A
40
BZA968A
200
100
0
0
2
4
6 V (V)
R
8
0
0
50
100
Tamb (
°
C)
150
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2001 Sep 03
4
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA900A-series
handbook, full pagewidth
ESD TESTER
RZ
CZ
450
Ω
RG 223/U
50
Ω
coax
10
×
ATTENUATOR
note 1
DIGITIZING
OSCILLOSCOPE
50
Ω
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330
Ω
1/4 BZA900A
Note 1: attenuator is only used for open
socket high voltage measurements
vertical scale = 100 V/div
horizontal scale = 50 ns/div
BZA968A
vertical scale = 5 V/div
horizontal scale = 50 ns/div
BZA962A
BZA956A
GND
unclamped
+1
kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
+1
kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 100 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
MGW321
Fig.6 ESD clamping test set-up and waveforms.
2001 Sep 03
5
Microchip MCU
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