HCS245MS
December 1992
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
Pinouts
20 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
TOP VIEW
DIR
A0
A1
A2
A3
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
20 VCC
19 OE
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
GND 10
Description
The Intersil HCS245MS is a Radiation Hardened Non-Invert-
ing Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
20 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
TOP VIEW
DIR
A0
A1
A2
A3
A4
A5
A6
A7
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
Truth Table
CONTROL
INPUTS
OE
L
L
H
DIR
L
H
X
OPERATION
B Data to A Bus
A Data to B Bus
Isolation
Functional Diagram
ONE OF 8 TRANSCEIVERS
A DATA
9
B DATA
11
(18, 17, 16, 15,
14, 13, 12)
TO OTHER
7 BUFFERS
(2, 3, 4, 5,
6, 7, 8)
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10kΩ
to 1MΩ resistors.
DIR
1
OUTPUT
ENABLE 19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
2468.1
7-475
Specifications HCS245MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Impedance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
o
o
Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75 C/W
16 C/W
12
o
C/W
Weld Seal Flat Pack . . . . . . . . . . . . . . 64
o
C/W
Power Dissipation per Package (PD)
For T
A
= -55
o
C to +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For T
A
= +100
o
C to +125
o
C Derate Linearly at 13mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
7, 8A, 8B
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
7.2
6.0
7.2
6.0
-
-
VCC
-0.1
VCC
-0.1
-
-
-
-
-
MAX
40
750
-
-
-
-
0.1
0.1
-
-
±0.5
±5.0
±1
±50
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
µA
µA
-
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
IOL
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
NOTE:
IIN
VCC = 5.5V, VIN = VCC or
GND, VCC = 4.5V and
5.5V
Applied Voltage = 0V or
VCC
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
IOZ
FN
1. All voltages reference to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
7-476
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
VCC = 4.5V
9
10, 11
VCC = 4.5V
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
MAX
19
23
26
30
28
33
UNITS
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
Data to Output
Enable to Output
SYMBOL
TPLH
TPHL
TPZL
TPZH
TPLZ
TPHZ
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
Disable to Output
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = Open, f = 1MHz
1
1
Output Transition
Time
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
MIN
-
6.0
-6.0
-
MAX
0.75
-
-
0.1
1M RAD
LIMITS
MIN
-
5.0
-5.0
-
MAX
3.75
-
-
0.1
UNITS
mA
mA
mA
V
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
MAX
UNITS
pF
pF
pF
pF
ns
ns
Typical 45
Typical 45
-
-
-
-
10
10
12
18
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
Applied Voltage = 0V or VCC
TEMP-
ERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
VCC
-0.1
-
V
Input Leakage Current
Three-State Output
Leakage Current
IIN
IOZ
+25
o
C
+25
o
C
-
-
±5
±50
-
-
±5
±100
µA
µA
7-477
Specifications HCS245MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
MIN
-
MAX
-
1M RAD
LIMITS
MIN
-
MAX
-
UNITS
-
PARAMETERS
Noise Immunity
Functional Test
Propagation Delay
Data to Output
Enable to Output
Enable to Output
NOTES:
SYMBOL
FN
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD (Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMP-
ERATURE
+25
o
C
TPLH
TPHL
TPZL
TPZH
TPLZ
TPHZ
+25
o
C
+25
o
C
+25
o
C
2
2
2
23
30
33
2
2
2
28
36
33
ns
ns
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZL/IOZH
DELTA LIMIT
12µA
-15% of 0 Hour
±200nA
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TEST
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
7-478
Specifications HCS245MS
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
2-9
1, 10 - 19
-
20
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
-
10
-
1 - 9, 11 - 20
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 680Ω
±
5% for dynamic burn-in.
10
11 - 18
1, 20
2-9
19
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
-
GROUND
10
VCC = 5V
±
0.5V
1 - 9, 11 - 20
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing. Group E, Sub-
group 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
VIH
VS
VIL
TPLH
TPHL
VOH
INPUT
AC Load Circuit
DUT
TEST
POINT
CL
RL
CL = 50pF
VS
VOL
TTLH
80%
VOL
20%
80%
20%
TTHL
OUTPUT
RL = 500Ω
VOH
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
VCC
VIH
VS
VIL
GND
HCS
4.50
4.50
2.25
0
0
UNITS
V
V
V
V
V
7-479
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