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MITH450PF1200LP

产品描述Insulated Gate Bipolar Transistor,
产品类别分立半导体    晶体管   
文件大小253KB,共5页
制造商IXYS
下载文档 详细参数 选型对比 全文预览

MITH450PF1200LP概述

Insulated Gate Bipolar Transistor,

MITH450PF1200LP规格参数

参数名称属性值
Reach Compliance Codecompliant
Base Number Matches1

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MITH450PF1200LP
tentative
IGBT Module
V
CES
I
C25
V
CE(sat)
= 1200 V
= 612 A
= 1.75 V
Phase leg
7
6
T2
5
2
Features / Advantages:
nt
Applications:
• AC motor drives
• Solar inverter
• Air-conditioning systems
• high power converters
• UPS
at
D2
D1
1
• Trench IGBT
- low V
CE(sat)
- easy paralleling due to the positive
temperature coefficient of the on-state
voltage
- Tvjm = 175°C
- square RBSOA @ 2x Ic
- short circuit rated for 10 µsec.
- low gate charge
- low EMI
• Free wheeling diode
- fast and soft reverse recovery
- low operating forward voltage
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be consi-
dered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
te
iv
4
T1
3
e
Package:
Y3-M6
• Isolation Voltage: 4000 V~
• Industry standard outline
• RoHS compliant
• Copper base plate
• internally DCB isolated
• ultrasonic welded power terminals
• advanced power cycling
20160621
Part number
MITH450PF1200LP
© 2016 IXYS All rights reserved
1-5

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描述 Insulated Gate Bipolar Transistor,
Reach Compliance Code compliant
Base Number Matches 1
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