512Kb (32K x 16-bit)
OTP EPROM MCM
A5
A9
X-Decoder
A12
A16
1024 x 512
Memory Matrix
27C1512T
I/O0
I/O7
Input
Data
Control
Y-Gating
Y-Decoder
CE
OE
PGM
A0-A4
A10-A11
Memory
V
CC
V
PP
V
SS
H
H
: High Threshold Inverter
Logic Diagram
F
EATURES
:
• 32K x 16 Bit OTP EPROM organization
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 80 MeV/mg/cm
2
- SEU
TH
LET: > 80 Mev/mg/cm
2
• Package:
- 40 pin R
AD
-P
AK
DIP
• Low power consumption:
- Active mode: 500 mW @ 10 MHz
- Standby mode: < 11 mW
• High speed page and word programming:
- Page programming time: 14 sec (typ)
• Programming power supply:
- V
PP
= 12.5 V ± 0.3 V
• One-time Programmable
• Pin Arrangement
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies’ 27C1512T high density 512K OneTime
Programmable Electrically Programmable Read Only Memory
multi-chip module (MCM) features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C1512T features fast address times and low power dissipa-
tion. The 27C1512T offers high speed programming using
page programming mode. The 27C1512T is offered in
JEDEC-Standard Byte-Wide EPROM pinouts, which allows
socket replacement with flash memory and mask ROMs.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class K.
1000569
12.19.01 Rev 2
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
T
ABLE
1. 27C1512T P
INOUT
D
ESCRIPTION
P
IN
21-29, 31-36
19-12, 10-3
2
20
40
1
30
39
37, 38
S
YMBOL
A0 - A14
I/O0 - I/O15
CE
OE
V
CC
V
PP
V
SS
PGM
NC
D
ESCRIPTION
Address
Input/Output
Chip Enable
Output Enable
Power Supply
Programming Supply
Ground
Programming Enable
No Connection
27C1512T
T
ABLE
2. 27C1512T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
1
Programming Voltage
1
All Input and Output Voltage
1,2
A9 Voltage
2
Operating Temperature Range
Storage Temperature Range
1. Relative to V
SS
.
2. V
IN
, V
OUT
, and V
ID
min = -1.0V for pulse width < 20 ns.
S
YMBOL
V
CC
V
PP
V
IN
, V
OUT
V
ID
T
OPR
T
STG
M
IN
-0.6
-0.6
-0.6
-0.6
-55
-65
M
AX
7.0
13.5
7.0
13.0
+125
+150
U
NIT
V
V
V
V
°C
°C
Memory
T
ABLE
3. 27C1512T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
Thermal Impedance
Operating Temperature Range
S
YMBOL
V
CC
V
IL
V
IH
M
IN
4.5
-0.3
2.2
--
-55
M
AX
5.5
0.8
V
CC
+0.3
1.23
+125
U
NITS
V
V
V
°C/W
°
C
Θ
JC
T
OPR
1000569
12.19.01 Rev 2
All data sheets are subject to change without notice
2
©2001 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
T
ABLE
4. 27C1512T C
APACITANCE 1,2, 3
P
ARAMETER
Input Capacitance
Output Capacitance
1. V
IN
= V
OUT
= 0V.
2. T
A
= 25
o
C, f = 1 MHz.
3. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
27C1512T
M
AX
10
15
U
NIT
pF
pF
T
ABLE
5. 27C1512T M
ODE
S
ELECTION 1,2
M
ODE
R
EAD
O
UTPUT
D
ISABLE
S
TANDBY
P
ROGRAM
P
ROGRAM
V
ERIFY
P
AGE
D
ATA
L
ATCH
P
AGE
P
ROGRAM
P
ROGRAM
I
NHIBIT
V
PP
V
CC
V
CC
V
CC
V
PP
V
PP
V
PP
V
PP
V
CC
V
PP
V
PP
V
PP
I
DENTIFIER
1. X = Don’t care.
2. 11.5V < V
IN
< 12.5V.
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
SS
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
CE
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
OE
V
IL
V
IH
X
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
PGM
V
PP
V
IH
X
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IH
A
0
X
X
X
X
X
X
X
X
X
X
X
V
IH
I/O
D
OUT
High-Z
High-Z
D
IN
D
OUT
D
IN
High-Z
High-Z
High-Z
High-Z
High-Z
ID
Memory
1000569
12.19.01 Rev 2
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
T
ABLE
6. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION
(V
CC
= 5V ±10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
High
Low
Standby V
CC
Current
Operating V
CC
Current
T
EST
C
ONDITION
V
IN
= 5.5V
V
IN
@ 0V
V
OUT
= 5.5V
V
OUT
= 0.45V
CE = V
IH
I
OUT
= 0 mA, CE = V
IL
I
OUT
= 0 mA, f = 5 MHz
I
OUT
= 0 mA, f = 10 MHz
V
PP
Current
Input Voltage
Output Voltage
I
OH
= -800 µA
I
OL
= 4.2 mA
V
PP
= 5.5V
S
YMBOL
I
LI
I
LI
I
OH
I
OL
I
SB
I
CC1
I
CC2
I
CC3
I
PP1
V
IH1
V
IL1
V
OH
V
OL
M
IN
--
4
--
-4.0
--
--
--
--
--
2.2
--
2.4
--
--
--
--
--
1
--
--
--
--
T
YP
--
--
--
4
--
2
60
60
100
40
--
0.8
--
0.45
V
µA
V
mA
mA
M
AX
2
--
U
NIT
µA
µA
µA
Memory
T
ABLE
7. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V + 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Access Time
Chip Enable Access Time
Output Enable Access TIme
Output Hold to Address Change
Output Disable to High-Z
2
T
EST
C
ONDITION
CE = OE = V
IL
OE = V
IL
CE = V
IL
CE = V
IL
CE = OE = V
IL
S
YMBOL
t
ACC
t
CE
t
OE
t
OH
t
DF
M
IN
--
--
--
0
0
M
AX
200
200
70
--
50
U
NIT
ns
ns
ns
ns
ns
1. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1 TTL gate + 100pF (including scope and jig)
- Referenced levels for measuring timing0.8V/2.0V
2. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
1000569
12.19.01 Rev 2
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Input Leakage Current
Operating V
CC
Current
Operating V
PP
Current
Input Voltage
5
Output Voltage
I
OH
= -400 µA
I
OH
= 2.1 mA
1. V
CC
must be applied before V
PP
and removed after V
PP
.
2. V
PP
must not exceed 13V, including overshoot.
3. Do not change V
PP
from V
IL
to 12.5V or 12.5V to V
IL
when CE = low.
CE = PGM = V
IL
T
EST
C
ONDITION
V
IN
= 0V to V
CC
S
YMBOL
I
LI
I
CC
I
PP
V
IH
V
IL
V
OH
V
OL
M
IN
--
--
--
2.2
-0.1
7
2.4
--
27C1512T
M
AX
2
30
80
V
CC
+5
6
0.8
--
0.45
V
U
NIT
µA
mA
mA
V
T
ABLE
8. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2,3,4
4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design.
5. Device reliability may be adversely affected if the device is installed or removed while V
PP
= 12.5V.
6. If V
IH
is over the specified maximum value, programming operation can no be guaranteed.
7. V
IL
min = -0.6V for pulse width < 20 ns.
Memory
T
ABLE
9. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Chip Enable Setup TIme
V
PP
Setup Time
V
CC
Setup Time
Output Enable Setup Time
Output Disable Time
PGM Initial Programming Pulse Width
PGM Over programming Pulse Width
Data Valid from Output Enable Time
Output Enable Pulse During Data Latch
Output Enable Hold Time
S
YMBOL
t
AS
t
AH
t
DS
t
DH
t
CES
t
VPS
t
VCS
t
OES
t
DF 3
t
PW
t
OPW
t
OE
t
LW
t
OEH
M
IN
2
0
2
2
2
2
2
2
0
0.19
0.19
0
1
2
M
AX
--
--
--
--
--
--
--
--
130
0.21
5.25
150
--
--
U
NIT
µs
µs
µs
µs
µs
µs
µs
µs
ns
ms
ms
ns
µs
µs
1000569
12.19.01 Rev 2
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies.
All rights reserved.
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