Data Sheet
PT7C5035 series
1.8V High Frequency Crystal Oscillator
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Features
•
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1.6 to 5.5V operating supply voltage range
Oscillation frequency range (varies with version)
1.6 to 5.5V: 40MHz to 165MHz
-40 to 85℃ operating temperature range
Voltage regulator build-in
Oscillation capacitors build-in
Inverter amplifier feedback resistor built-in
Oscillation detector function built-in
Standby function
High impedance in standby mode, oscillator stops
Low standby current
Power-save pull-up resistor built-in
CMOS output duty level
15pf output load
8mA output drive capability(V
DD
=1.6V)
Die form(PT7C5035ALx)
Description
The PT7C5035 series are 1.8V operation, high-
frequency crystal oscillator module ICs. They support
40MHz to 165MHz (1.6-5.5V) 3rd overtone oscillation
and fundamental oscillation modes. The crystal
oscillator
current,
circuit
has
voltage
reducing
regulator
the
drive,
significantly reducing current consumption and crystal
significantly
oscillator
characteristics supply voltage dependency. The output
circuit comprises a CMOS buffer than can operate at
high frequencies and drive a 15pf capacitance load.
Ordering Information
Part no.
PT7C5035ALx-2GDE
PT7C5035ALx-2DE
PT7C5035ALx-5GDE
PT7C5035ALx-2GWF
PT7C5035ALx-2WF
PT7C5035ALx-5GWF
Package type
Die form
Die form
Die form
Wafer form
Wafer form
Wafer form
Application
•
Used for crystal oscillator
Note:
1. “x” shows the different function. See below table.
2. “-2G” show the die thickness is 220±20µm without
coating; “-2” show the die thickness is 220±20µm
with coating; “-5G” show the die thickness is
130±10µm without coating;
Series Configuration
Part No
PT7C5035ALF
PT7C5035ALA
PT7C5035ALB
PT7C5035ALC
PT7C5035ALD
Operation supply
Voltage(V)
Recommended operating
frequency range(MHz)
40 to 70
60 to 90
Built-in capacitance(pF)
C
IN
6
4
4
2
2
C
OUT
6
4
4
3
3
1.6 to 5.5
90 to 110
110 to 135
135 to 165
Note:
* 1. The recommended operating frequency is a yardstick value derived from the crystal used for PTI characteristics authentication.
However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal
characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
PT0310(09/08)
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Ver:1
Data Sheet
PT7C5035 series
1.8V High Frequency Crystal Oscillator
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Block Diagram
Funtion Description
Standby Function
When INHN goes LOW, the device is in standby mode. The Q output becomes high impedance and the oscillator circuit stops.
OE
HIGH(or open)
LOW
Q
f0 output frequency
High impedance
Oscillator
Normal operation
Stopped
Build-in voltage regulator
The voltage regulator generate a stable voltage supplying the oscillator, significantly reducing current consumption and crystal
current, significantly reducing the oscillator characteristics supply voltage dependency.
Power-saving Pull-up Resistor
The INHN pin pull-up resistance changes in response to the input level(HIGH or LOW).When OE is tied LOW ,the pull-up
resistance becomes large, reducing the current consumed by the resistance. When INHN is left open, pull-up resistance becomes
small, such that even if the input is affected by external noise the outputs are stable due to INHN being tied HIGH by the pull-up
resistor.
Oscillation Detector Function
The devices also feature an oscillation detector circuit. This circuit function to disable the outputs until the oscillator circuit starts.
This prevents abnormal oscillator output at oscillator start-up when power is applied or when INHN is switched.
PT0310(09/08)
2
Ver:1
Data Sheet
PT7C5035 series
1.8V High Frequency Crystal Oscillator
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Pad Configuration
Die No.
Sensor
VDD1
VDD2
Q
INHN
XT
XTN
GND
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
sensor
-50
930.00
GND
730.60
92.60
INHN
171.20
92.60
Q
730.60
801.60
XT
301.20
92.60
VDD2
342.00
801.60
XTN
516.40
92.60
VDD1
212.00
801.60
Note1:
Substrate is connected to GND for 130µm and 220µm without coating; To 220µm with coating,
substrate is connected to GND or VDD or floating.
Note2:
VDD1 and VDD2 are both supply voltage and connecting with metal on the chip. Bonding any one
is OK.
Die Size:
910µm*980µm (Including scribe line size100µm*100µm.)
Die Thickness:
PT7C5035ALx-2G/PT7C5035ALx-2: 220µm±20µm; PT7C5035ALx-5G: 130µm±10µm.
Pad Size:
90µm*90µm
Pad Description
Sym.
Type
Description
Output state control input. Oscillator stops when Low. Power-saving pull-up resistor built-in
Oscillator input pin.
Oscillator output pin.
Ground (-).
Output. Output frequency. High impedance in standby mode.
Supply voltage.
INHN
XT
XTN
GND
I
I
O
P
Crystal connection pins.
Crystal is connected between XT and XTN
Q
VDD
(VDD1 or
VDD2)
O
P
PT0310(09/08)
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Ver:1
Data Sheet
PT7C5035 series
1.8V High Frequency Crystal Oscillator
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Maximum Ratings
Storage Temperature ................................................................................- 65oC to +150oC
Supply Voltage range...................................................................................- 0.5V to +5.0V
Input voltage range............................................................GND -0.5V to V
DD
+0.5V
Output voltage range .......................................................GND -0.5V to V
DD
+0.5V
Output current...........................................................................................................................25mA
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
C
L
≤15pF
Sym.
Parameter
Conditions
40MHz≤f≤70MHz
60MHz≤f≤90MHz
V
DD
Supply voltage
90MHz≤f≤110MHz
110MHz≤f≤135MHz
135MHz≤f≤165MHz
V
IN
T
A
Input voltage
Operating temperature
Input pins
-
5035ALF
5035ALA
5035ALB
5035ALC
5035ALD
Min
1.6
1.6
1.6
1.6
1.6
GND
-40
Typ
-
-
-
-
-
-
+25
Max
5.5
5.5
5.5
5.5
5.5
V
DD
+85
V
°C
V
Unit
PT0310(09/08)
4
Ver:1
Data Sheet
PT7C5035 series
1.8V High Frequency Crystal Oscillator
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DC Electrical Characteristics
Symbol
Parameter
Condition
V
DD
=1.8V
V
DD
=2.5V
5035ALF
f=70MHz
V
DD
=3.3V
V
DD
=5.0V
V
DD
=1.8V
V
DD
=2.5V
5035ALA
f=90MHz
V
DD
=3.3V
V
DD
=5.0V
Measurement
V
DD
=1.8V
cct1,
V
DD
=2.5V
5035ALB
INHN=open or
f=110MHz
V
DD
=3.3V
HIGH,
V
DD
=5.0V
CL=15pF
V
DD
=1.8V
V
DD
=2.5V
5035ALC
f=135MHz
V
DD
=3.3V
V
DD
=5.0V
V
DD
=1.8V
V
DD
=2.5V
5035ALD
f=165MHz
V
DD
=3.3V
V
DD
=5.0V
Measurement cct1, INHN=LOW
Q: Measurement cct3, V
DD
=1.6 to 5.5V,I
OH
=8mA
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
DD
-0.4
Typ
6.5
8.5
11
16
9
12
14
18
12
14
18
24
14
18
24
28
18
24
28
32
-
V
DD
-0.3
Max
10
16
20
26
16
20
24
30
20
24
30
40
24
30
40
50
30
40
50
60
10
-
0.4
10
10
-
0.3V
DD
4
150
Unit
I
DD
Operaing current
Consumption*1
mA
I
ST
V
OH
V
OL
Q: Measurement cct3, V
DD
=1.6 to 5.5V,I
OL
=8mA
-
0.3
V
OH
=V
DD
-
-
Output leakage
Q: Measurement cct5,
I
Z
current
INHN=LOW, V
DD
=5.5V
-
-
V
OL
=GND
HIGH-level
V
IH
INHN, Measurement cct4
0.7V
DD
-
LOW-level
V
IL
INHN, Measurement cct4
-
-
R
UP1
INHN=GND
0.4
-
INHN pull-up
Measurement cct6
resistance
INHN=0.7V
DD
R
UP2
30
-
Note:
*1: The operating current consumption includes the C
L
=15pF capacitance load charging current.
Standby current
HIGH-level
Output voltage
LOW-level
µA
V
V
µA
µA
V
V
MΩ
KΩ
PT0310(09/08)
5
Ver:1
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