Product specification
Silicon N-Channel Power MOSFET
FEATURES
Fast Switching
ESD Improved Capability
ow Gate Charge (Typical Data:38nC)
Low Reverse transfer capacitances(Typical:15pF)
100% Single Pulse avalanche energy Test
BL12N65F
Pb
Lead-free
APPLICATIONS
Power switch circuit of adaptor and charger.
ITO-220AB
Ordering Information
Part Number
BL12N65F□
□:
none is for Lead Free package;
“G” is for Halogen Free package
Package
ITO-220AB
Shipping
50/Tube
Marking Code
12N65F
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
GS
I
D
I
DMa1
E
AS
P
D
T
J
,T
stg
Parameter
Drain-to-Source voltage
Gate -Source voltage
Continuous Drain current
Continuous Drain current Tc=100°C
Pulsed Drain current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and
StorageTemperature
Value
650
±30
12
7.5
48
550
42
150，-55 to +150
Units
V
V
A
A
mJ
W
℃
a1: Repetitive rating; pulse width limited by maximum junction temperature
MTM5029A
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1
Product specification
Silicon N-Channel Power MOSFET
BL12N65F
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
OFF Characteristics
Parameter
Drain-Source Breakdown
Voltage
Drain to Source Leakage
Current
Gate to Sourse Forward
Leakage
Gate to Sourse
ReverseLeakage
ON Characteristics
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Symbol
R
DS(ON)
V
GS (TH)
Test conditions
V
GS
=10V, I
D
=6A
V
DS
= V
GS
, I
D
=
250μA
MIN
-
2.0
TYP
0.66
-
MAX
0.8
4.0
UNIT
Ω
V
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS (R)
Test conditions
V
GS
=0V,I
D
=250μA
V
DS
=650V, V
GS
=0V
V
GS
=30V
V
GS
=-30V
MIN
650
-
-
-
TYP
-
-
-
-
MAX
-
1
0.1
-0.1
UNIT
V
uA
uA
μA
Dynamic Characteristics
Parameter
Input Capacitance
Output Capacitance
Reserse Transfer Capacitance
Symbol
Ciss
Coss
Crss
V
GS
=0V,
V
DS
=25V,f=1.0MHz
Test conditions
MIN
-
-
-
TYP
1993
160
9.5
MAX
-
-
-
pF
UNIT
Source-Drain Diode Characteristics
Parameter
Continuous Source Current(Body
Diode)
Maximum Pulsed Current(Body Diode))
Diode Forward Voltage
Symbol Test conditions
I
S
Ta=25℃
I
SM
V
SD
I
S
=12.0A,
V
GS
=0V
-
-
-
40
1.5
A
V
MIN
-
TYP
-
MAX
10
UNIT
A
MTM5029A
www.gmesemi.com
2
Product specification
Silicon N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
BL12N65F
MTM5029A
www.gmesemi.com
3
Product specification
Silicon N-Channel Power MOSFET
PACKAGE OUTLINE
Plastic surface mounted package
BL12N65F
ITO-220AB
ITO-220AB
Dim
A
B
C
D
E
F
G
H
I
J
L
M
N
O
P
K/R
Min
9.90
14.80
4.30
2.50
2.80
13.00
3.10
28.00
7.90
0.40
0.70
1.30
2.60
2.60
2.45
1.10
Max
10.30
15.20
4.70
2.90
3.30
13.60
3.30
28.60
8.90
0.60
0.90
1.50
2.80
3.10
2.65
1.30
All Dimensions in mm
MTM5029A
www.gmesemi.com
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