V59C1256(404/804/164)QI
HIGH PERFORMANCE 256 Mbit DDR2 SDRAM
4 BANKS X 16Mbit X 4 (404)
4 BANKS X 8Mbit X 8 (804)
4 BANKS X 4Mbit X 16 (164)
37
DDR2-533
Clock Cycle Time (t
CK3
)
Clock Cycle Time (t
CK4
)
Clock Cycle Time (t
CK5
)
Clock Cycle Time (t
CK6
)
Clock Cycle Time (t
CK7
)
System Frequency (f
CK max
)
5ns
3.75ns
-
-
-
266 MHz
3
DDR2-667
5ns
3.75ns
3ns
-
-
333 MHz
25A
DDR2-800
5ns
3.75ns
3ns
2.5ns
-
400 MHz
25
DDR2-800
5ns
3.75ns
2.5ns
2.5ns
-
400 MHz
19A
DDR2-1066
5ns
3.75ns
2.5ns
2.5ns
1.87ns
533 MHz
Features
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
High speed data transfer rates with system frequency up to
533MHz
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency:0, 1, 2, 3, 4, 5 and 6
Write Latency = Read Latency -1
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 us (8192 cycles/64 ms)
OCD (Off-Chip Driver Impendance Adjustment)
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single-ended data-
strobe is an optional feature)
On-Chip DLL aligns DQ and DQs transitions with CK transi-
tions
Differential clock inputs CK and CK
JEDEC Power Supply 1.8V ± 0.1V
VDDQ = 1.8V ± 0.1V
Available in 60-ball FBGA for x4 and x8 component or 84
ball FBGA for x16 component
All inputs & outputs are compatible with SSTL_18 interface
tRAS lockout supported
Read Data Strobe supported (x8 only)
Internal four bank operations with single pulsed RAS
Description
The V59C1256(404/804/164)QI is a four bank DDR DRAM
organized as 4 banks x 16Mbit x 4 (404), 4 banks x 8Mbit x 8 (804),
or 4 banks x 4Mbit x 16 (164). The V59C1256(404/804/164)QI
achieves high speed data transfer rates by employing a chip ar-
chitecture that prefetches multiple bits and then synchronizes
the output data to a system clock.
The chip is designed to comply with the following key DDR2
SDRAM features:(1) posted CAS with additive latency, (2)write
latency = read latency -1, (3)Off-chip Driver(OCD) impedance
adjustment, (4) On Die Termination.
All of the control, address, circuits are synchronized with the
positive edge of an externally supplied clock. I/O s are synchro-
nized with a pair of bidirectional strobes (DQS, DQS) in a source
synchronous fashion.
Operating the four memory banks in an interleaved fashion
allows random access operation to occur at a higher rate than
is possible with standard DRAMs. A sequential and gapless
data rate is possible depending on burst length, CAS latency
and speed grade of the device.
Available Speed Grade:
-37 (DDR2-533) @ CL 4-4-4
-3 (DDR2-667) @ CL 5-5-5
-25A (DDR2-800) @ CL 6-6-6
-25 (DDR2-800) @ CL 5-5-5
-19A(DDR2-1066)@CL 7-7-7
Device Usage Chart
Operating
Temperature
Range
0°C
≤
Tc
≤
85°C
-25°C
≤
Tc
≤
95°C
-40°C
≤
Tc
≤
95°C
Package Outline
60 ball FBGA
84 ball FBGA
•
•
•
CK Cycle Time (ns)
-37
•
•
•
Power
-19A
•
•
•
-3
•
•
•
-25A
•
•
•
-25
•
•
•
Std.
•
•
•
L
•
•
•
Temperature
Mark
Blank
M
I
V59C1256(404/804/164)QI Rev. 1.0 March 2011
1
ProMOS TECHNOLOGIES
V59C1256(404/804/164)QI
x4 pack age pinout (Top View) : 60ball FBGA Package
1
VDD
NC
2
NC
VSSQ
3
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
7
VSSQ
DQS
VDDQ
DQ2
DQS
VSSQ
DQ0
VSSQ
8
9
VDDQ
NC
VDDQ
NC
VDD
ODT
VDDQ DQ1
NC
VSSQ
VDDL VREF
CKE
NC
BA0
A10
VSS
A3
A7
VDD
A12
VSSDL CK
RAS
CAS
A2
A6
A11
NC
CK
CS
A0
A4
A8
NC
VDD
VSS
Notes:
B1, B9, D1, D9 = NC for x4 organization.
Pins B3 has identical capacitance as pins B7.
VDDL and VSSDL are power and ground for the DLL. It is recommended that they are isolated on the device from
VDD, VDDQ, VSS, and VSSQ.
Ball Locations (x4)
: Populated Ball
+
: Depopulated Ball
Top View (See the balls through the Package)
1
A
B
C
D
E
F
G
H
J
K
L
2
3
4
5
6
7
8
9
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
V59C1256(404/804/164)QI Rev. 1.0 March 2011
3
ProMOS TECHNOLOGIES
V59C1256(404/804/164)QI
x8 package pinout (Top View) : 60ball FBGA Package
1
VDD
DQ6
VDDQ
DQ4
VDDL
2
NU/
RDQS
VSSQ
DQ1
VSSQ
VREF
CKE
NC
BA0
A10
VSS
A3
A7
VDD
A12
3
VSS
DM/
RDQS
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
7
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
8
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
NC
VSS
VDD
9
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT
Notes:
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS
& DQS and input masking function is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL. It is recommended that they are isolated on the device
from VDD, VDDQ, VSS, and VSSQ.
Ball Locations (x8)
: Populated Ball
+
: Depopulated Ball
Top View (See the balls through the Package)
1
A
B
C
D
E
F
G
H
J
K
L
2
3
4
5
6
7
8
9
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
V59C1256(404/804/164)QI Rev. 1.0 March 2011
4
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
