BCX51T series
Rev. 1 — 22 August 2019
45 V, 1 A PNP power bipolar transistors
Product data sheet
1. Product profile
1.1. General description
PNP power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic
package.
Table 1. Product overview
Type number
BCX51T
BCX51-10T
BCX51-16T
Package
Nexperia
SOT89
JEDEC
SC-62
BCX54T
BCX54-10T
BCX54-16T
NPN complement
1.2. Features and benefits
•
•
•
•
High collector current capability I
C
and I
CM
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
1.3. Applications
•
•
•
•
•
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4. Quick reference data
Table 2. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CEO
I
C
I
CM
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
≤ 1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
-45
-1
-2
Unit
V
A
A
Nexperia
BCX51T series
45 V, 1 A PNP power bipolar transistors
Parameter
DC current gain
BCX51T
BCX51-10T
BCX51-16T
V
CE
= -2 V; I
C
= -150 mA
[1]
[1]
[1]
63
63
100
-
-
-
250
160
250
Conditions
Min
Typ
Max
Unit
Symbol
h
FE
[1]
pulsed; t
p
≤ 300 μs; δ ≤ 0.02
2. Pinning information
Table 3. Pinning
Pin
1
2
3
Symbol
E
C
B
Description
emitter
collector
base
3
2
1
Simplified outline
Graphic symbol
C
B
E
006aaa231
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
BCX51T
BCX51-10T
BCX51-16T
SC-62
Description
plastic, surface-mounted package; 3 leads; 1.5 mm pitch;
4.5 mm x 2.5 mm x 1.5 mm body
Version
SOT89
4. Marking
Table 5. Marking
Type number
BCX51T
BCX51-10T
BCX51-16T
Marking code
C5
C6
C7
BCX51T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 22 August 2019
2 / 12
Nexperia
BCX51T series
45 V, 1 A PNP power bipolar transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse; t
p
≤ 1 ms
T
amb
≤ 25 °C
[1]
[2]
[3]
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse; t
p
≤ 1 ms
Min
-
-
-
-
-
-
-
-
-
-
-
-55
-65
Max
-45
-45
-5
-1
-2
-200
-300
500
800
1100
150
150
150
Unit
V
V
V
A
A
mA
mA
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm .
1600
P
tot
(mW)
1200
(1)
006aaa238
800
(2)
(3)
400
0
- 75
2
- 25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; 6 cm mounting pad for collector
2
(2) FR4 PCB; 1 cm mounting pad for collector
(3) FR4 PCB; standard footprint
Fig. 1.
Power derating curves
BCX51T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 22 August 2019
3 / 12
Nexperia
BCX51T series
45 V, 1 A PNP power bipolar transistors
6. Thermal characteristics
Table 7. Thermal characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
R
th(j-a)
Parameter
thermal resistance from junction to ambient
Conditions
in free air
[1]
[2]
[3]
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
250
157
114
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm .
10
3
Z
th
(K/W)
10
2
006aaa235
duty cycle = 1
0.75
0.33
0.2
0.1
0.05
0.5
10
0.02
0
1
10
-5
0.01
10
-4
10
-3
10
-2
10
-1
10
2
10
3
1
10
t
p
(s)
FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th
(K/W)
duty cycle = 1
10
2
0.75
0.33
0.1
10
0.5
0.2
0.05
006aaa236
0
1
10
-5
0.02
0.01
10
-4
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCX51T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 22 August 2019
4 / 12
Nexperia
BCX51T series
45 V, 1 A PNP power bipolar transistors
006aaa237
10
3
Z
th
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.5
0.2
10
0.1
0.05
0.02
0
1
10
-5
0.01
10
-4
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
collector-base
breakdown voltage
collector-emitter
breakdown voltage
emitter-base
breakdown voltage
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
BCX51T, -10T, -16T
BCX51T
BCX51-10T
BCX51-16T
V
CEsat
V
BE
f
T
C
c
[1]
Conditions
I
C
= -100 µA; I
E
= 0 A
I
C
= -2 mA; I
E
= 0 A
I
E
= -100 µA; I
C
= 0 A
V
CB
= -30 V; I
E
= 0 A
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0 A
Min
-45
-45
-5
-
-
-
Typ
-
-
-
-
-
-
Max
Unit
V
V
V
-100
-10
-100
nA
μA
nA
V
CE
= -2 V; I
C
= -5 mA
V
CE
= -2 V; I
C
= -500 mA
V
CE
= -2 V; I
C
= -150 mA
V
CE
= -2 V; I
C
= -150 mA
V
CE
= -2 V; I
C
= -150 mA
I
C
= -500 mA; I
B
= -50 mA
V
CE
= -2 V; I
C
= -500 mA
V
CE
= -5 V; I
C
= -50 mA; f = 100 MHz
V
CB
= -10 V; I
E
= i
e
= 0 A; f = 1 MHz
[1]
[1]
[1]
[1]
[1]
[1]
63
40
63
63
100
-
-
-
-
-
-
-
-
-
-
-
140
7
-
-
250
160
250
-500
-1
-
-
mV
V
MHz
pF
collector-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
pulsed; t
p
≤ 300 μs; δ ≤ 0.02
BCX51T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 22 August 2019
5 / 12
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