电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CCR05CG132JS7303

产品描述Ceramic Capacitor, Ceramic, 100V, 5% +Tol, 5% -Tol, CG, -/+30ppm/Cel TC, 0.0013uF, 1909,
产品类别无源元件    电容器   
文件大小1MB,共15页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

CCR05CG132JS7303概述

Ceramic Capacitor, Ceramic, 100V, 5% +Tol, 5% -Tol, CG, -/+30ppm/Cel TC, 0.0013uF, 1909,

CCR05CG132JS7303规格参数

参数名称属性值
是否Rohs认证不符合
Objectid709475402
包装说明, 1909
Reach Compliance Codenot_compliant
ECCN代码EAR99
YTEOL7.1
电容0.0013 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度5.973 mm
JESD-609代码e0
长度4.83 mm
负容差5%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式Radial
包装方法TR
正容差5%
额定(直流)电压(URdc)100 V
参考标准MIL-PRF-20
系列C(SIZE)G
尺寸代码1909
温度特性代码CG
温度系数30ppm/Cel ppm/°C
端子面层Tin/Lead (Sn/Pb)
端子节距5.08 mm
宽度2.29 mm

文档预览

下载PDF文档
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
高频噪声试验没有通过,请问如何才能提高抗干扰的能力
最近开发出来一款应用于PDA的TFT-LCD,但是客户进行高频噪声试验时没有通过, 请问如何才能提高抗干扰的能力?...
s_smmo 嵌入式系统
树莓派3B+测评汇总
这里是树莓派3B+活动测评内容分享汇总,感谢e络盟提供的树莓派3B+开发板和对论坛活动的支持! 有对树莓派3B+开发板感兴趣想要购买的网友可以进e络盟官方网址进行购买。 e络盟官网:https: ......
okhxyyo 单片机
DSP烧录到Flash中去了,仿真可运行,拔掉仿真器,开电重启不能运行
初接触DSP,遇到了问题,望各位大神能帮我分析一下问题,不胜感激。一、问题描述: 1、F28335用CCS4仿真; 2、共两块一样的板子,第一块无论仿真或者拔掉仿真器单机运行都可以正常运行; 3、 ......
nuanyi 微控制器 MCU
zigbee如何出厂前组网
TI你好, 请问,目前设计的系统是一个协调器加N个路由节点的整套系统,出厂前需要组好网络,请教两个问题。 1.如何让z协调器指定PANID 2.系统内的N个路由节点需要 ......
yuyueha 无线连接
FlyMCU烧录程序 STM32 麒麟开发板
我用FlyMCU烧录程序 怎么也烧录不进去 不知道出了啥问题? ...
也许想你 stm32/stm8
串行通信怎么判断一帧数据发送完毕?设置一个时间间隔?过了这个时间间隔还没有数据来就可以判断一帧数据发送完成?
串行通信怎么判断一帧数据发送完毕?设置一个时间间隔?过了这个时间间隔还没有数据来就可以判断一帧数据发送完成?...
junliyang 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 478  145  586  1355  2660  10  3  12  28  54 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved