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MT47H128M8CF-187E:H TR

产品描述IC ddr2 sdram 1gbit 60bga
产品类别存储   
文件大小2MB,共133页
制造商Micron(美光)
官网地址http://www.micron.com/
标准  
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MT47H128M8CF-187E:H TR概述

IC ddr2 sdram 1gbit 60bga

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512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths: 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 128 Meg x 4 (32 Meg x 4 x 4 banks)
– 64 Meg x 8 (16 Meg x 8 x 4 banks)
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Rev. G
– 84-ball FBGA (8mm x 12.5mm) Rev. H
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. G
– 60-ball FBGA (8mm x 10mm) Rev. H
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm) Rev. G
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. G
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C
T
C
+85°C)
2
– Industrial (–40°C
T
C
+95°C;
–40°C
T
A
+85°C)
• Revision
Notes:
Marking
128M4
64M8
32M16
HR
NF
CF
SH
HW
JN
-187E
-25E
-3
None
L
None
IT
:G/:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
2. For extended CT operating temperature see
I
DD
Table 11 (page 29), Note 7.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed Grade
-187E
-25E
-3
CL = 3
400
400
400
CL = 4
533
533
533
CL = 5
800
800
667
CL = 6
800
800
n/a
CL = 7
1066
n/a
n/a
t
RC
(ns)
54
55
55
PDF: 09005aef85651470
512MbDDR2.pdf - Rev. W 04/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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