BCP68-25
NPN Silicon AF Transistor
•
For general AF applications
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type: BCP69 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
4
2
1
3
Type
BCP68-25
Marking
*
1=B
Pin Configuration
2=C
3=E
4=C
-
-
Package
SOT223
* Marking is the same as the type-name
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
114 °C
Junction temperature
Storage temperature
1
Pb-containing
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
20
25
25
5
1
2
100
200
3
150
-65 ... 150
Unit
V
A
mA
W
°C
package may be available upon special request
1
2008-10-10
BCP68-25
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
12
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA,
I
B
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
Symbol
min.
20
25
25
5
Values
typ.
-
-
-
-
max.
-
-
-
-
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
µA
-
-
-
-
-
250
-
-
0.1
100
-
50
160
60
-
375
-
0.5
V
DC current gain
2)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 1 A,
V
CE
= 1 V
h
FE
Collector-emitter saturation voltage
2)
I
C
= 1 A,
I
B
= 100 mA
V
CEsat
V
BE(ON)
-
Base-emitter voltage
2)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
1
For
f
T
-
100
-
MHz
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
Pulse
2
2008-10-10
BCP68-25
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
10
3
h
FE
5
100 ˚C
10
2
5
10
2
5
BCP 68
EHP00277
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
4
BCP 68
EHP00278
Ι
C
mA
10
3
5
100 ˚C
25 ˚C
-50 ˚C
25 ˚C
-50 ˚C
10
1
5
10
1
5
10
0
10
0
10
0
10
1
10
2
4
10
3
mA 10
0
0.2
0.4
0.6
V
0.8
Ι
C
V
CEsat
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 10
10
4
BCP 68
EHP00279
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CBO
= 25 V
10
5
BCP 68
EHP00276
Ι
C
mA
Ι
CBO
nA
10
4
10
3
5
100 ˚C
25 ˚C
-50 ˚C
10
3
max
10
2
5
10
2
typ
10
1
5
10
1
10
0
0
0.2
0.4
0.6
0.8
V
1.2
10
0
0
50
100
˚C
T
A
150
V
BE sat
3
2008-10-10
BCP68-25
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 5 V
10
3
f
T
MHz
5
2.5
BCP 68
EHP00275
Total power dissipation
P
tot
= (T
S
)
3.5
W
P
tot
2
10
2
1.5
5
1
0.5
10
1
10
0
5 10
1
5 10
2
mA
10
3
0
0
15
30
45
60
75
90 105 120
°C
150
Ι
C
t
s
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
10
3
P
totmax /
P
totDC
-
10
1
10
2
10
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
2008-10-10
Package SOT223
BCP68-25
Package Outline
A
6.5
±0.2
3
±0.1
4
1.6
±0.1
0.1 MAX.
15˚ MAX.
B
3.5
±0.2
1
2
3
7
±0.3
0.7
±0.1
4.6
0.25
M
A
2.3
0.5 MIN.
0.28
±0.04
0...10˚
Foot Print
0.25
M
B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55
12
Pin 1
6.8
1.75
5
2008-10-10
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