电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SM6T33CA-M3/5B

产品描述tvs diode 28.2vwm 45.7vc DO-214a
产品类别电路保护   
文件大小101KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 全文预览

SM6T33CA-M3/5B概述

tvs diode 28.2vwm 45.7vc DO-214a

文档预览

下载PDF文档
SM6T Series
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.8 V to 220 V
5.8 V to 188 V
600 W
5.0 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
(1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 3)
(1)
Power dissipation on infinite heatsink T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
-65 to +150
UNIT
W
A
W
A
°C
Revision: 13-Dec-13
Document Number: 89425
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1283  2589  802  2079  2178  57  59  33  40  12 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved