MT42L128M32D2KL-25 IT:A,MT42L128M32D2KL-25 IT:A pdf中文资料,MT42L128M32D2KL-25 IT:A引脚图,MT42L128M32D2KL-25 IT:A电路-Datasheet-电子工程世界

Datasheet> 器件分类 > 存储> MT42L128M32D2KL-25 IT:A

文档预览

MT42L128M32D2KL-25 IT:A: 产品描述IC lpddr2 sdram 4gbit 168fbga; 产品类别存储; 文件大小2MB，共164页; 制造商Micron(美光); 官网地址http://www.micron.com/; 标准

下载文档全文预览

MT42L128M32D2KL-25 IT:A概述

IC lpddr2 sdram 4gbit 168fbga

文档预览

下载PDF文档

全文
预览

2Gb: x16, x32 Mobile LPDDR2 SDRAM S4

Features

Mobile LPDDR2 SDRAM

MT42L128M16D1, MT42L64M32D1, MT42L64M64D2,

MT42L128M32D2, MT42L256M32D4, MT42L128M64D4

MT42L96M64D3, MT42L192M32D3

Features

• Ultra low-voltage core and I/O power supplies

– V

DD2

= 1.14–1.30V

– V

DDCA

DDQ

= 1.14–1.30V

– V

DD1

= 1.70–1.95V

• Clock frequency range

– 533–10 MHz (data rate range: 1066–20 Mb/s/pin)

• Four-bit prefetch DDR architecture

• Eight internal banks for concurrent operation

• Multiplexed, double data rate, command/address

inputs; commands entered on every CK edge

• Bidirectional/differential data strobe per byte of

data (DQS/DQS#)

• Programmable READ and WRITE latencies (RL/WL)

• Programmable burst lengths: 4, 8, or 16

• Per-bank refresh for concurrent operation

• On-chip temperature sensor to control self refresh

rate

• Partial-array self refresh (PASR)

• Deep power-down mode (DPD)

• Selectable output drive strength (DS)

• Clock stop capability

• RoHS-compliant, “green” packaging

Table 1: Key Timing Parameters

Speed

Grade

-18

-25

-3

Clock

Rate

(MHz)

533

400

333

Data Rate

(Mb/s/pin) RL WL

1066

800

667

Options

• V

DD2

: 1.2V

• Configuration

– 16 Meg x 16 x 8 banks x 1 die

– 8 Meg x 32 x 8 banks x 1 die

– 8 Meg x 32 x 8 banks x 2 die

– 16 Meg x 16 x 8 banks x 4 die

– 8 Meg x 32 x 8 banks x 2 die

– 8 Meg x 32 x 8 banks x 3 die

– 8 Meg x 32 x 8 banks x 4 die

– 16 Meg x 16 x 8 banks x 2 die +

8 Meg x 32 x 8 banks x 1 die

• Device type

– LPDDR2-S4, 1 die in package

– LPDDR2-S4, 2 die in package

– LPDDR2-S4, 3 die in package

– LPDDR2-S4, 4 die in package

• FBGA“green” package

– 134-ball FBGA (11mm x 11.5mm)

– 134-ball FBGA (11.5mm x 11.5mm)

– 168-ball FBGA (12mm x 12mm)

– 216-ball FBGA (12mm x 12mm)

– 220-ball FBGA (14mm x 14mm)

• Timing – cycle time

– 1.875ns @ RL = 8

– 2.5ns @ RL = 6

– 3.0ns @ RL = 5

• Operating temperature range

– From –25°C to +85°C

– From –40°C to +105°C

• Revision

Notes:

Marking

128M16

64M32

128M32

256M32

64M64

96M64

128M64

192M32

-18

-25

-3

RCD/

Typical

1. For fast

RCD/

RP, contact factory.

2. For -18 speed grade, contact factory.

PDF: 09005aef83f3f2eb

2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

2Gb: x16, x32 Mobile LPDDR2 SDRAM S4

Features

Contents

General Description ....................................................................................................................................... 11

General Notes ............................................................................................................................................ 11

Specifications ........................................................................................................................................... 12

Package Block Diagrams ................................................................................................................................. 16

Package Dimensions ....................................................................................................................................... 23

Ball Assignments and Descriptions ................................................................................................................. 33

Functional Description ................................................................................................................................... 39

Power-Up ....................................................................................................................................................... 40

Initialization After RESET (Without Voltage Ramp) ...................................................................................... 42

Power-Off ....................................................................................................................................................... 42

Uncontrolled Power-Off .............................................................................................................................. 43

Mode Register Definition ................................................................................................................................ 43

Mode Register Assignments and Definitions ................................................................................................ 43

ACTIVATE Command ..................................................................................................................................... 54

8-Bank Device Operation ............................................................................................................................ 54

Read and Write Access Modes ......................................................................................................................... 55

Burst READ Command ................................................................................................................................... 55

READs Interrupted by a READ ..................................................................................................................... 62

Burst WRITE Command .................................................................................................................................. 62

WRITEs Interrupted by a WRITE ................................................................................................................. 65

BURST TERMINATE Command ...................................................................................................................... 65

Write Data Mask ............................................................................................................................................. 67

PRECHARGE Command ................................................................................................................................. 68

READ Burst Followed by PRECHARGE ......................................................................................................... 69

WRITE Burst Followed by PRECHARGE ....................................................................................................... 70

Auto Precharge ........................................................................................................................................... 71

READ Burst with Auto Precharge ................................................................................................................. 71

WRITE Burst with Auto Precharge ............................................................................................................... 72

REFRESH Command ...................................................................................................................................... 74

REFRESH Requirements ............................................................................................................................. 80

SELF REFRESH Operation ............................................................................................................................... 82

Partial-Array Self Refresh – Bank Masking .................................................................................................... 83

Partial-Array Self Refresh – Segment Masking .............................................................................................. 84

MODE REGISTER READ ................................................................................................................................. 85

Temperature Sensor ................................................................................................................................... 87

DQ Calibration ........................................................................................................................................... 89

MODE REGISTER WRITE Command ............................................................................................................... 91

MRW RESET Command .............................................................................................................................. 91

MRW ZQ Calibration Commands ................................................................................................................ 92

ZQ External Resistor Value, Tolerance, and Capacitive Loading ..................................................................... 94

Power-Down .................................................................................................................................................. 94

Deep Power-Down ........................................................................................................................................ 101

Input Clock Frequency Changes and Stop Events ............................................................................................ 102

Input Clock Frequency Changes and Clock Stop with CKE LOW .................................................................. 102

Input Clock Frequency Changes and Clock Stop with CKE HIGH ................................................................. 103

NO OPERATION Command ........................................................................................................................... 103

Simplified Bus Interface State Diagram ....................................................................................................... 103

Truth Tables .................................................................................................................................................. 105

Electrical Specifications ................................................................................................................................. 113

Absolute Maximum Ratings ....................................................................................................................... 113

PDF: 09005aef83f3f2eb

2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

2Gb: x16, x32 Mobile LPDDR2 SDRAM S4

Features

Input/Output Capacitance ......................................................................................................................... 113

Electrical Specifications – I

Specifications and Conditions ........................................................................... 114

AC and DC Operating Conditions ................................................................................................................... 117

AC and DC Logic Input Measurement Levels for Single-Ended Signals ............................................................. 119

REF

Tolerances ......................................................................................................................................... 120

Input Signal .............................................................................................................................................. 121

AC and DC Logic Input Measurement Levels for Differential Signals ................................................................ 123

Single-Ended Requirements for Differential Signals .................................................................................... 124

Differential Input Crosspoint Voltage ......................................................................................................... 126

Input Slew Rate ......................................................................................................................................... 127

Output Characteristics and Operating Conditions ........................................................................................... 127

Single-Ended Output Slew Rate .................................................................................................................. 128

Differential Output Slew Rate ..................................................................................................................... 129

HSUL_12 Driver Output Timing Reference Load ......................................................................................... 131

Output Driver Impedance .............................................................................................................................. 131

Output Driver Impedance Characteristics with ZQ Calibration .................................................................... 132

Output Driver Temperature and Voltage Sensitivity ..................................................................................... 133

Output Impedance Characteristics Without ZQ Calibration ......................................................................... 133

Clock Specification ........................................................................................................................................ 137

CK(abs),

CH(abs), and

CL(abs) ................................................................................................................ 138

Clock Period Jitter .......................................................................................................................................... 138

Clock Period Jitter Effects on Core Timing Parameters ................................................................................. 138

Cycle Time Derating for Core Timing Parameters ........................................................................................ 139

Clock Cycle Derating for Core Timing Parameters ....................................................................................... 139

Clock Jitter Effects on Command/Address Timing Parameters ..................................................................... 139

Clock Jitter Effects on READ Timing Parameters .......................................................................................... 139

Clock Jitter Effects on WRITE Timing Parameters ........................................................................................ 140

Refresh Requirements .................................................................................................................................... 141

AC Timing ..................................................................................................................................................... 142

CA and CS# Setup, Hold, and Derating ........................................................................................................... 149

Data Setup, Hold, and Slew Rate Derating ....................................................................................................... 156

Revision History ............................................................................................................................................ 163

Rev. N, Production – 3/12 ........................................................................................................................... 163

Rev. M, Production – 10/11 ........................................................................................................................ 163

Rev. L, Production – 09/11 .......................................................................................................................... 163

Rev. K, Production – 08/11 ......................................................................................................................... 163

Rev. J, Production – 05/11 .......................................................................................................................... 163

Rev. H, Production – 3/11 ........................................................................................................................... 163

Rev. G, Production – 1/11 ........................................................................................................................... 163

Rev. F, Advance – 11/10 .............................................................................................................................. 163

Rev. E, Advance – 09/10 .............................................................................................................................. 163

Rev. D, Advance – 07/10 ............................................................................................................................. 163

Rev. C, Advance – 07/10 ............................................................................................................................. 164

Rev. B, Advance – 03/10 .............................................................................................................................. 164

Rev. A, Advance – 03/10 .............................................................................................................................. 164

PDF: 09005aef83f3f2eb

2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

推荐资源

高分辨率的35 mm CCD图像传感器，你知道吗？

直接耦合放大电路电路图

IGBT在CO2气体保护焊电源中的应用电路图

Bilateral Current Source

TC3827充电控制器IC与μC结合的应用电路

电动单梁吊车无线电遥控器(TX315B1)

菜鸟求助:用delphi写一个pc与单片机通信的程序，请高手讲一下大致思路: rt. 使用什么函数？做东西，以前很少接触delphi，所以有请帮忙了，谢谢谢谢。...; dhu2060427 嵌入式系统

EEWORLD大学堂----电流感应放大器详解: 电流感应放大器详解：https://training.eeworld.com.cn/course/3806...; hi5 模拟电子

关于.out反汇编的问题: 我试着有了一个513K的.out文件通过dis2000反汇编出来，反出来之后变成了7632K。用记事本打开发现只有 .sect ".data" 00300000 b2bd .word 0xb2bd 00300001 8f00 .word 0x8f00 00300002 ......; djx 微控制器 MCU

请教WinCe 中的_COMMONOAKROOT等环境变量的定义: 请问在wince bsp的sources里面经常会见到如_COMMONOAKROOT、_CPUDEPPATH、_TARGETPLATROOT、_PUBLICROOT等以$(_PUBLICROOT)形式调用的变量，请问这些变量是在哪里定义的呢？ pb->build os->o ......; cqwangsf 嵌入式系统

求助，精确50hz信号发生器的设计用什么方法实现比较好: RT 555不稳定 CD4060和32678组成的晶振分频和用C51单片机那个比较好，还有咩有其他方法呢？...; qiyuan775 嵌入式系统

芯片钥匙挂件: 从旧主板拆下的芯片，和挂了的MCU做的钥匙挂件！！ ...; TZ技术创意市集

家用医疗电子设备设计指南

　　美国食品与药物管理局(FDA)指出：在医疗设备产业中，家庭卫生保健是发展最快的领域。受到人类平均寿命延长，慢性病患者越来越多以及保健成本越来越高等原因的推动，越来越多更“智能”、“友好”的医疗设备正在进入家庭消费市场。　　这些医疗保健产品包括：血糖仪、数字血压计、血气分析仪、数字脉搏和心率监视器、数字温度计、怀孕测试仪、透皮给药系统、透析系统和氧浓缩器等。其中许多仪器可以用无线方式通过互...[详细]
ARM LPC2210在脑血氧监测仪中的应用

　　引言　　氧是人体新陈代谢的重要物质,脑组织新陈代谢率高,耗氧量占全身总量的20％左右。在心脑血管疾病及脑外伤病人的临床抢救与治疗中,如果缺乏对脑组织供氧的监护手段,就有可能造成脑组织神经功能的丧失或损害。因此,提供一种连续监测大脑供氧状况的临床设备,对提高心脑血管和脑外伤等多种疾病的诊断和治疗具有重大意义。在健康监护和临床诊断中,对脑组织血氧参数的监测是不可缺少的。　　本文即应用A...[详细]
前端IC决定超声系统整体性能

　　超声系统是目前广泛使用的最精密复杂的信号处理仪器之一。像任何复杂的仪器一样，由于性能、物理和成本要求的原因，实现时要做出许多权衡。掌握一些系统级的知识对于充分了解所要求前端IC的功能和性能水平是很必要的，尤其是低噪声放大器(LNA)、时间增益补偿放大器(TGC，一种可变增益放大器)和模数转换器(ADC)。这些模拟信号处理IC是决定系统整体性能的关键因素。前端IC的特性规定了系统性能的限度，一...[详细]
个人医疗设备系统解决方案

　　试着想象　　肾上腺素在撞击着您身体的每一个部位，心跳开始加速，感觉兴奋不已。在刚才的跑步训练中，您取得了一个最好成绩。当您结束训练并锁定练习计时器之后，可以将得到的数据上传提交给您的教练。　　但在此之前，您应该首先去看望您的父亲。他住在这个国家的另一端，而且经常不记得服用降压药。然后，您还要将葡萄糖测量结果发送给您的糖尿病主治医生。虽然夜深了，但是您还要花几分钟时间来浏览和上传这...[详细]
家庭医疗设备组件市场将稳健成长

　　根据市场研究公司IMS Research最近发表的一份报告预测，家庭医疗设备组件市场将出现强劲成长，预期2011年该市场规模将达14亿美元，平均每年成长10%左右。其中半数以上的成长动力将来自微控制器、模块IC和LCD显示器且该市场将较不受半导体产业的荣衰周期波动影响。　　根据另一份由InMedica旗下医疗电子部门公布的预测数字也显示，消费性医疗设备市场将迅猛成长，2011年制造商的营...[详细]
ARM MPU在医疗电子系统中的应用

　　当前，全球医疗电子行业正逐渐展现出诱人的发展前景，产品更新换代的速度不断提高，同时，由于医疗电子产品自身的特殊性，对元器件的性能、功耗、可靠性和集成度等方面都提出了极高的要求。　　全球各大著名的半导体厂商纷纷推出一系列适合该应用领域的产品。　　基于ARM内核的32位嵌入式微处理器(MPU)，以其高性能、低功耗和丰富的片内资源，成为目前众多医疗电子产品开发平台的首选。其中，Cirrus ...[详细]
SynQor超小病人全接触型医疗电源模块

　　SynQor推出超小的病人全接触型400W医疗电源模块，该电源模块的封装为3×5×1.44，功率密度高达18.3W/立方英寸，转换效率达91%。　　SynQor通过推出首款专门针对医疗应用而研制的AC/DC电源模块，使得公司的多元化战略持续成功地延伸至新的医疗领域。ACuQor模块系列实现了在3×5×1.44有限尺寸上提供400W的有用功率。SynQor可以提供48V，36V or 24V的...[详细]
佳能抢滩医疗可保持高增长

　　　“我们今年2月21日拿到中国市场医疗设备产品销售许可证，截至6月底，已经获得了200%的增长。”6月27日，佳能中国区医疗设备产品销售总经理关口三津夫告诉记者，今年初，其领导的中国区医疗部门才刚刚启动销售业务。　　去年末，佳能公司代表取缔役社长御手洗冨士夫首次将医疗业务列为打印、影像外的第三大支柱业务。截至2007财年末，佳能全球销售额中打印业务占据65%、影像业务占26%，而以医疗为...[详细]
LSI推出针对Silverlight™ 的内容处理方案

2008 年 7 月 14 日， LSI 公司宣布推出针对 Microsoft® Silverlight™ 平台的内容处理解决方案，进一步扩大其产品系列范围。与最初的基于视频加速技术的内容处理产品系列相比，新系列还将包括 LSI™ Tarari® 系列内容处理器解决方案。因此该系列已经成为一套完整的解决方案，可支持安全性、服务质量、基于内容计费以及带宽管理等功...[详细]
天威视讯机顶盒的快乐与沉思

前言加速发展的中国有线电视数字化进程受到了强有力政策的支持，推动了中国数字有线机顶盒市场增长。据最新研究报告显示，2007年底，中国有线数字电视电视用户数量达到2,796万户，有线电视数字化程度达到24%；2008年1季度，中国有线数字电视用户数量已经达到3195.18万户，有线电视数字化程度达到31.96%。2008年2季度，根据各地区有线电视网络公司规划，中国有线数字电视新增用户770....[详细]
Sun与三星合作开发高性能服务器闪存芯片

　　据国外媒体报道，三星公司已与Sun微系统公司开展合作，双方将共同开发用于固态闪存盘的单层颗粒（SLC）NAND闪存芯片。　　两家公司宣称，与现行标准的SLC闪存芯片相比，新的服务器级SLC NAND闪存的数据写入与擦除速度要比前者快五倍。此外，新设计还将极大地延长高性能数据处理服务器的生命周期。　　三星与Sun看好这项新闪存技术被用于不间断工作的关键任务型计算环境。这类关键任务包括视...[详细]
瑞萨微控制器SH72544R应用于汽车传动系统

瑞萨科技公司（Renesas Technology Corp.）近日宣布推出适用于汽车引擎和传动系统控制的SH72544R SuperH系列微控制器。这款微控制器具有高达200 MHz的高速运算能力及高速、大容量2.5 MB片上闪存功能。样品已于在2008年7月8日开始在日本供货。 2007年8月，瑞萨科技发布了SH72546RFCC软件开发用微控制器，它是第一款采用90 nm工艺...[详细]
英特尔45nm处理器和芯片组助力嵌入式

　　日前，英特尔公司推出面向嵌入式用户的英特尔酷睿2双核处理器 T9400和移动式英特尔GM45 高速芯片组，并提供长达7年的超长生命周期支持。本次推出的处理器和芯片组是全新英特尔迅驰2 平台的构成组件，可为移动应用程序带来更卓越的性能、更耐久的电池使用时间和广泛的无线网络互操作性。此外，今日推出的英特尔酷睿2 双核处理器 T9400经验证可支持英特尔5100 内存控制器中枢（MCH）芯片组，并...[详细]
Heptagon用300mm晶圆生产高耐热透镜

　　奥地利EVGroup（EVG）宣布，为形成手机用相机模块高耐热镜头，芬兰HeptagonOy采用了EVG的光刻机(MaskAligner)“IQAligner”。EVG高级副总裁HermannWaltl表示，Heptagon采用的是支持300mm晶圆的装置。该装置已提供给Heptagon的制造子公司——新加坡HeptagonMicro-OpticsPte。　　Heptagon是于1993...[详细]
ADI与中国合作伙伴共推Blackfin开发工具

2008 年 07 月 23 日，亚德诺半导体公司（ Analog Devices, Inc ）与中国区合作伙伴共同宣布可向市场提供全系列的 Blackfin 本地开发工具。这些本地开发工具包括仿真器、开发板和软件模块，针对的处理器范围包括从 BF531 到最新的 BF52x 和 BF54x 的全系列 Blackfin 。作为世界领先的通用 DSP 处理器提供...[详细]

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多