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V54C3256804VGI7PC

产品描述DRAM
产品类别存储    存储   
文件大小717KB,共56页
制造商ProMOS Technologies Inc
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V54C3256804VGI7PC概述

DRAM

V54C3256804VGI7PC规格参数

参数名称属性值
Objectid109206506
包装说明,
Reach Compliance Codecompliant
ECCN代码EAR99
YTEOL0

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V54C3256(16/80/40)4VG
256Mbit SDRAM
(3.0~3.3) VOLT, TSOP II / FBGA PACKAGE
16M X 16, 32M X 8, 64M X 4
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
Features
4 banks x 4Mbit x 16 organization
4 banks x 8Mbit x 8 organization
4 banks x16Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64 ms
Available in 54 Pin TSOP II, 60 Ball FBGA, 54
Ball FBGA
LVTTL Interface
Single (+3.0V~3.3 V)
±0.3
V Power Supply
Description
The V54C3256(16/80/40)4VG is a four bank Syn-
chronous DRAM organized as 4 banks x 4Mbit x 16,
4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The
V54C3256(16/80/40)4VG achieves high speed
data transfer rates up to 166 MHz by employing a
chip architecture that prefetches multiple bits and
then synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T/S
Access Time (ns)
6
Power
7
7PC
Std.
L
U
Temperature
Mark
Blank
V54C3256(16/80/40)4VG Rev. 1.0 August 2008
1

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