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TG2016SBN26.0000M-MCGNEM3

产品描述Clipped Sine Output Oscillator,
产品类别无源元件    振荡器   
文件大小646KB,共2页
制造商Seiko Epson Corporation
标准
下载文档 详细参数 全文预览

TG2016SBN26.0000M-MCGNEM3概述

Clipped Sine Output Oscillator,

TG2016SBN26.0000M-MCGNEM3规格参数

参数名称属性值
是否Rohs认证符合
Objectid8209804946
Reach Compliance Codecompliant
YTEOL0
其他特性TR
老化0.5 PPM/FIRST YEAR
最大控制电压2.4 V
最小控制电压0.4 V
频率调整-机械NO
频率偏移/牵引率12 ppm
频率稳定性0.5%
JESD-609代码e4
安装特点SURFACE MOUNT
标称工作频率26 MHz
最高工作温度85 °C
最低工作温度-40 °C
振荡器类型CLIPPED SINE
输出阻抗10000 Ω
输出电平0.8 V
物理尺寸2.0mm x 1.6mm x 0.73mm
最大供电电压2.94 V
最小供电电压2.66 V
标称供电电压2.8 V
表面贴装YES
端子面层Gold (Au) - with Nickel (Ni) barrier

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Crystal oscillator
TCXO/VC-TCXO
HIGH STABILITY
Product Number (Please contact us)
TG2016SBN : X1G004691xxxx00
TG2520SBN : X1G005151xxxx00
TG2016SBN
/
TG2520SBN
•Output
frequency
:
13 MHz to 55MHz
•Supply
voltage
:
1.8 V Typ./ 2.8 V Typ./ 3.0 V Typ./ 3.3 V Typ.
•Frequency
/ temperature characteristics
:
±0.5
× 10
-6
Max. (-40
°C
to +85
°C)
:
±2.0
× 10
-6
Max. (-40
°C
to +85
°C)
•External
dimensions
:
2.0 × 1.6 × 0.73 mm / 2.5 × 2.0 × 0.8 mm
•Applications
:
GPS, RF
Wireless communication devices
(CDMA, WCDMA, LTE, WiMAX, other)
•Features
:
High stability, Low noise
TG2016SBN
(2.0 × 1.6 × 0.73 mm)
Actual size
TG2016SBN
TG2520SBN
TG2520SBN
(2.5 × 2.0 × 0.8 mm)
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
Frequency/temperature
characteristics
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging
Symbol
f
0
V
CC
T_stg
T_use
f_tol
f
0
-T
C
f
0
-Load
f
0
-V
CC
f_age
TCXO
13 MHz to 55MHz
16 MHz, 16.368 MHz, 16.369 MHz, 16.384 MHz, 16.8 MHz,
19.2 MHz, 20 MHz, 26 MHz, 27MHz, 28.974 MHz, 30 MHz,
32 MHz, 37.4 MHz, 38.4 MHz, 39 MHz and 40 MHz
1.8 V
±0.1
V / 2.8 V
±5
% / 3.0 V
±5
% / 3.3 V
±5
%
-40 ° to +90 °
C
C
G: -40
°C
to +85
°C
±1.5 ×
10
-6
Max.
C:
±0.5 ×
10
-6
Max. / G: -40
°C
to +85
°C
F:
±2.0 ×
10
-6
Max. / G: -40
°C
to +85
°C
±0.1 ×
10
-6
Max.
±0.1 ×
10
-6
Max.
±0.5 ×
10
-6
Max.
±1.5 ×
10
-6
Max.
1.2 mA Max.
1.4 mA Max.
1.5 mA Max.
1.8 mA Max.
2.0 mA Max.
2.2 mA Max.
500 kΩ Min.
-
±8.0 ×
10
-6
to
±12.0 ×
10
-6
-
-
GND level (DC cut)
Peak to Peak
T=0 at 90% Vcc
DC cut capacitor = 0.01
µF
, Vc function[Vc] (Symbol table)
Voltage
VC-TCXO
Conditions / Remarks
Standard frequency
Supply voltage range :1.7 V to 3.63 V
Storage as single product.
After reflow, +25
°C
Standard stability version
10 kΩ // 10 pF
±10
%
V
CC
±
5 %
+25
°C,
First year, 13 MHz≤ f
0
≤40
MHz
+25
°C
,First year, 40 MHz< f
0
≤55
MHz
13 MHz≤ f
0
<16 MHz
16 MHz≤ f
0
≤27
MHz
27 MHz< f
0
≤36
MHz
36 MHz< f
0
≤40
MHz
40 MHz< f
0
≤52
MHz
52 MHz< f
0
≤55
MHz
V
C
- GND (DC)
B: V
C
=0.9 V
±0.6
V (V
CC
=1.8 V) or
C: V
C
=1.4 V
±1.0
V (V
CC
=2.8 V) or
D: V
C
=1.5 V
±1.0
V (V
CC
=3.0 V) or
E: V
C
=1.65 V
±1.0
V (V
CC
=3.3 V)
Current consumption
I
CC
Input resistance
Frequency control range
Frequency change polarity
Symmetry
Output voltage
Start-up time
Rin
f_cont
-
Positive polarity
SYM
45 % to 55 %
V
PP
0.8 V Min.
t_str
1.0 ms Max.
Load_R
10 kΩ
Output load condition
Load_C
10 pF
*
Note : Please contact us for requirements not listed in this specification.
Product Name
(Standard form)
TG2016 SBN 26.000000MHz
T
C G
N N M
External
TG2016SBN
2.0±0.15
Model(TG2016, TG2520)
Output (S: Clipped sine wave)
Frequency
(Refer to symbol table)
Frequency / temperature characteristics (C:
±0.5 ×
10
-6
Max., F:
±2.0 ×
10
-6
Max.)
Operating temperature (G: -40
°C
to +85
°C)
OE function (N: Non)
V
C
function(Refer to symbol table , A: V
C
=any)
Internal identification code (“L”, “M”, “H” is default)
dimensions
(Unit:mm)
Footprint (Recommended)
(Unit:mm)
TG2520SBN
2.0±0.2
2.5±0.2
B
A
(0.38)
1.6±0.15
Marking
C
Marking
(0.25)
0.73±0.07
0.8±0.1
Size
TG2016SBN
(2.0x1.6mm)
0.75
0.6
1.13
1.65
TG2520SBN
(2.5x2.0mm)
1.0
0.8
1.4
2.1
#1
C0.15
1.58±0.1
#2
0.5±0.1
1.18±0.1
0.40±0.1
Pin map
Pin
1
2
3
4
Connection
VC-TCXO
TCXO
V
C
N.C.
GND
OUT
V
CC
C0.20
#1
#2
(0.75)
D
0.6±0.1
A
B
C
D
#4
1.2±0.1
#3
#4
(0.55)
#3
1.5±0.1
To maintain stable operation, provide a 0.01uF to 0.1uF by-pass
capacitor at a location as near as possible to the power source
terminal of the crystal product (between V
CC
- GND).

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