X7R Dielectric
General Specifications
X7R formulations are called “temperature stable” ceramics
and fall into EIA Class II materials. X7R is the most popular
of these intermediate dielectric constant materials. Its tem-
perature variation of capacitance is within ±15% from
-55°C to +125°C. This capacitance change is non-linear.
Capacitance for X7R varies under the influence of electrical
operating conditions such as voltage and frequency.
X7R dielectric chip usage covers the broad spectrum of
industrial applications where known changes in capaci-
tance due to applied voltages are acceptable.
PART NUMBER (see page 2 for complete part number explanation)
0805
Size
(L" x W")
5
Voltage
6.3V = 6
10V = Z
16V = Y
25V = 3
50V = 5
100V = 1
200V = 2
C
Dielectric
X7R = C
103
Capacitance
Code (In pF)
2 Sig. Digits +
Number of
Zeros
M
Capacitance
Tolerance
Preferred
J = ± 5%
K = ±10%
M = ± 20%
A
Failure
Rate
A = Not
Applicable
T
Terminations
T = Plated Ni
and Sn
7 = Gold
Plated
2
Packaging
2 = 7" Reel
4 = 13" Reel
7 = Bulk Cass.
9 = Bulk
A
Special
Code
A = Std.
Product
Contact
Factory For
Multiples
Capacitance vs. Frequency
+30
+20
Insulation Resistance (Ohm-Farads)
X7R Dielectric
Typical Temperature Coefficient
10
5
Insulation Resistance vs Temperature
10,000
Capacitance
% Cap Change
0
-5
-10
-15
-20
-25
-60 -40 -20
0
20
40
60
80 100 120 140
+10
0
-10
-20
-30
1KHz
1,000
100
%
10 KHz
100 KHz
1 MHz
10 MHz
0
0
20
40
60
80
100
120
Temperature
°C
Frequency
Temperature
°C
Variation of Impedance with Cap Value
Impedance vs. Frequency
1,000 pF vs. 10,000 pF - X7R
0805
10.00
1,000 pF
10,000 pF
Variation of Impedance with Chip Size
Impedance vs. Frequency
10,000 pF - X7R
10
1206
0805
1210
Variation of Impedance with Chip Size
Impedance vs. Frequency
100,000 pF - X7R
10
1206
0805
1210
Impedance,
Impedance,
1.00
1.0
Impedance,
1.0
0.10
0.1
0.1
0.01
10
100
1000
.01
1
10
.01
100
1,000
1
10
100
1,000
Frequency, MHz
Frequency, MHz
Frequency, MHz
11
X7R Dielectric
Specifications and Test Methods
Parameter/Test
Operating Temperature Range
Capacitance
Dissipation Factor
X7R Specification Limits
-55ºC to +125ºC
Within specified tolerance
≤
2.5% for
≥
50V DC rating
≤
3.0% for 25V DC rating
≤
3.5% for 16V DC rating
≤
5.0% for
≤
10V DC rating
100,000MΩ or 1000MΩ - µF,
whichever is less
No breakdown or visual defects
No defects
≤
±12%
Meets Initial Values (As Above)
≥
Initial Value x 0.3
≥
95% of each terminal should be covered
with fresh solder
No defects, <25% leaching of either end terminal
≤
±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤
±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤
±12.5%
≤
Initial Value x 2.0 (See Above)
≥
Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
No visual defects
≤
±12.5%
≤
Initial Value x 2.0 (See Above)
≥
Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
Charge device with twice rated voltage in
test chamber set at 125ºC ± 2ºC
for 1000 hours (+48, -0)
Remove from test chamber and stabilize
at room temperature for 24 ± 2 hours
before measuring.
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
(+48, -0) with rated voltage applied.
Remove from chamber and stabilize at
room temperature and humidity for
24 ± 2 hours before measuring.
Step 1: -55ºC ± 2º
Step 2: Room Temp
Step 3: +125ºC ± 2º
Step 4: Room Temp
30 ± 3 minutes
≤
3 minutes
30 ± 3 minutes
≤
3 minutes
Dip device in eutectic solder at 260ºC for 60
seconds. Store at room temperature for 24 ± 2
hours before measuring electrical properties.
90 mm
Measuring Conditions
Temperature Cycle Chamber
Freq.: 1.0 kHz ± 10%
Voltage: 1.0Vrms ± .2V
For Cap > 10 µF, 0.5Vrms @ 120Hz
Charge device with rated voltage for
60 ± 5 secs @ room temp/humidity
Charge device with 300% of rated voltage for
1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Deflection: 2mm
Test Time: 30 seconds
1mm/sec
Insulation Resistance
Dielectric Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Resistance to
Flexure
Stresses
Solderability
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
Resistance to
Solder Heat
Thermal
Shock
Repeat for 5 cycles and measure after
24 ± 2 hours at room temperature
Load Life
Load
Humidity
12
Microchip MCU
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