电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

VJ2225Y274GNBAT

产品描述CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.27 uF, SURFACE MOUNT, 2225, CHIP, Halogen Free and ROHS Compliant
产品类别无源元件    电容器   
文件大小141KB,共17页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

VJ2225Y274GNBAT概述

CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.27 uF, SURFACE MOUNT, 2225, CHIP, Halogen Free and ROHS Compliant

VJ2225Y274GNBAT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1787165767
包装说明, 2225
Reach Compliance Codecompliant
ECCN代码EAR99
YTEOL7.38
电容0.27 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度2.18 mm
JESD-609代码e4
长度5.59 mm
安装特点SURFACE MOUNT
多层Yes
负容差2%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状RECTANGULAR PACKAGE
封装形式SMT
包装方法TR, EMBOSSED PLASTIC, 7 INCH
正容差2%
额定(直流)电压(URdc)100 V
尺寸代码2225
表面贴装YES
温度特性代码X7R
温度系数15% ppm/°C
端子面层Silver/Palladium (Ag/Pd)
端子形状WRAPAROUND
宽度6.35 mm

文档预览

下载PDF文档
VJ Non-Magnetic Series
www.vishay.com
Vishay Vitramon
Surface Mount Multilayer Ceramic Chip Capacitors
for Non-Magnetic Applications
FEATURES
Specialty: Non-magnetic MLCCs
Manufactured with non-magnetic materials
Safety screened for magnetic properties
C0G (NP0) and X7R/X5R dielectrics offered
Wide range of case sizes, voltage ratings and
capacitance values
Allowed assembly methods are conductive epoxy bonding
and IR reflow
Wet built process
Reliable Noble Metal Electrode (NME) system
Compliant to RoHS Directive 2002/95/EC
Halogen-free according to IEC 61249-2-21 definition
Magnetic Resonance Imaging (MRI)
Medical test and diagnostic equipment
High Rel medical systems
High Rel aviation systems
Laboratory analysis systems
Navigation and electronic test equipment
Audio amplifiers
APPLICATIONS
ELECTRICAL SPECIFICATIONS
NON-MAGNETIC C0G (NP0)
GENERAL SPECIFICATION
Note
Electrical characteristics at + 25 °C unless otherwise specified
NON-MAGNETIC X7R/X5R
GENERAL SPECIFICATION
Note
Electrical characteristics at + 25 °C unless otherwise specified
Operating Temperature:
- 55 °C to + 125 °C
Capacitance Range:
0.5 pF to 56 nF
Voltage Range
:
10 V
DC
to 3000 V
DC
Temperature Coefficient of Capacitance (TCC):
0 ppm/°C ± 30 ppm/°C from - 55 °C to + 125 °C
Dissipation Factor (DF):
0.1 % maximum at 1.0 V
RMS
and
1 MHz for values
1000 pF
0.1 % maximum at 1.0 V
RMS
and
1 kHz for values > 1000 pF
Insulating Resistance:
At + 25 °C 100 000 M min. or 1000
F
whichever is less
At + 125 °C 10 000 M min. or 100
F
whichever is less
Aging
:
0 % maximum per decad
e
Dielectric Strength Test:
Performed per method 103 of EIA 198-2-E.
Applied test voltages
200 V
DC
-rated:
250 % of rated voltage
500 V
DC
-rated:
200 % of rated voltage
630 V
DC
, 1000 V
DC
-rated:
150 % of rated voltage
120 % of rated voltage
1500 V
DC
to 3000 V
DC
-rated:
Revision: 01-Feb-12
Operating Temperature
:
- 55 °C to + 125 °C
Capacitance Range
:
100 pF to 6.8 μF
Voltage Range
:
6.3 V
DC
to 3000 V
DC
Temperature Coefficient of Capacitance (TCC):
X5R: ± 15 % from - 55 °C to + 85 °C, with 0 V
DC
applied
X7R: ± 15 % from - 55 °C to + 125 °C, with 0 V
DC
applied
Dissipation Factor (DF):
6.3 V, 10 V ratings: 5 % maximum at 1.0 V
RMS
and 1 kHz
16 V, 25 V ratings: 3.5 % maximum at 1.0 V
RMS
and 1 kHz
50 V ratings: 2.5 % maximum at 1.0 V
RMS
and 1 kHz
Insulating Resistance:
At + 25 °C 100 000 M min. or 1000
F
whichever is less
At + 125 °C 10 000 M min. or 100
F
whichever is less
Aging Rate
:
1 % maximum per decade
Dielectric Strength Test:
Performed per method 103 of EIA 198-2-E.
Applied test voltages
200 V
DC
-rated:
250 % of rated voltage
500 V
DC
-rated:
min. 150 % of rated voltage
150 % of rated voltage
630 V
DC
, 1000 V
DC
-rated:
1500 V
DC
, 3000 V
DC
-rated:
120 % of rated voltage
Document Number: 45128
1
For technical questions, contact:
mlcc@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
不容错过
本帖最后由 paulhyde 于 2014-9-15 09:05 编辑 硬件学习好帮手 ...
CHERISH538 电子竞赛
USB过滤驱动如何识别插入的设备是U盘还是移动硬盘?
最近才开始接触驱动程序,要做一个USB过滤驱动,其中需要识别U盘和移动硬盘并进行处理,其他的USB设备不做处理,请问大家应该怎么做?...
果果女 嵌入式系统
C51系统上实现YAFFS文件系统
随着NAND Flash存储器作为大容量数据存储介质的普及,基于NAND闪存的文件系统YAFFS(Yet Another Flash File System)正逐渐被应用到各种嵌入式系统中。本文将详细阐述YAFFS文件系统在C51系统上的 ......
coolnie888 51单片机
ads1115采集四路问题
目前现在的问题是只能采样一路,不能采样四路,如何实现四路采样呢?还有一个问题就是在什么时候判断ads1115已经转换完了,要把数据读出来?在什么时候判断第一路已经转换完了,转换第二路...
powered 模拟与混合信号
蚂蚁矿机S9控制板原理图
475027 475026 ...
littleshrimp FPGA/CPLD
keil c51中 sbit和位寻址 用法
c51中的位寻址区是020H~02FH (BYTE)地址,共16字节 位寻址方式:直接位地址、位变量并在定义时给定地址(汇编或sbit)、特殊功能寄存器(sfr)或位寻址区的字节变量可用变量名+位号 sbit 用于 ......
dark_sky 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1684  2383  2647  1593  529  34  48  54  33  11 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved