Not for new design, this product will be obsoleted soon
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
Features
•
•
•
•
•
High power gain
High transition frequency
e3
Low noise figure
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT23
2
1
3
SOT23
3
2
1
SOT323
Applications
• Wide band amplifier up to GHz range
2
3
19150
Mechanical Data
Typ:
BFR93A
Case:
SOT23 Plastic case
Weight:
approx. 8.0 mg
Marking:
+ R2
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFR93AR
Case:
SOT23 Plastic case
Weight:
approx. 8.0 mg
Marking:
+ R5
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Electrostatic sensitive device.
Observe precautions for handling.
Typ:
BFR93AW
Case:
SOT323 Plastic case
Weight:
approx. 8.0 mg
Marking:
WR2
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR93A
BFR93AR
BFR93AW
Ordering Code
BFR93AGELB-GS08
BFR93ARGELB-GS08
BFR93AW-GS08
Type Marking
+ R2
+ R5
WR2
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Package
SOT23
SOT23
SOT323
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
50
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85035
Rev. 1.6, 08-Sep-08
www.vishay.com
1
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 µm Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test condition
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 50 mA, I
B
= 5 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
40
12
0.1
90
0.4
150
Min
Typ.
Max
100
100
10
Unit
µA
nA
µA
V
V
DC forward current transfer ratio V
CE
= 5 V, I
C
= 30 mA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 30 mA,
f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, Z
S
= 50
Ω,
f = 800 MHz, I
C
= 5 mA
V
CE
= 8 V, Z
S
= 50
Ω,
f = 800 MHz, I
C
= 25 mA
Power gain
V
CE
= 8 V, I
C
= 25 mA,
Z
S
= 50
Ω,
Z
L
= Z
Lopt
,
f = 800 MHz
V
CE
= 8 V, I
C
= 25 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
Ω
V
CE
= 8 V, I
C
= 25 mA,
f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
F
G
pe
Min
Typ.
6
0.45
0.2
1.5
1.6
2.1
14
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
Linear output voltage - two tone
intermodulation test
Third order intercept point
V
1
= V
2
260
mV
IP
3
31
dBm
www.vishay.com
2
Document Number 85035
Rev. 1.6, 08-Sep-08
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Common Emitter S-Parameters
Z
0
= 50
Ω,
T
amb
= 25 °C, unless otherwise specified
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
8
5
100
300
500
800
1000
1200
1500
1800
2000
8
10
100
300
500
800
1000
1200
1500
1800
2000
8
15
100
300
500
800
1000
1200
1500
1800
2000
8
20
100
300
500
800
1000
1200
1500
1800
2000
8
25
100
300
500
800
1000
1200
1500
1800
2000
0.811
0.530
0.370
0.274
0.256
0.255
0.277
0.294
0.312
0.676
0.377
0.259
0.197
0.189
0.195
0.222
0.245
0.263
0.597
0.306
0.219
0.172
0.165
0.174
0.201
0.226
0.245
0.540
0.274
0.199
0.164
0.160
0.166
0.197
0.223
0.242
0.502
0.254
0.191
0.162
0.158
0.163
0.200
0.220
0.243
S11
ANG
deg
- 33.9
- 83.4
- 116.3
- 149.7
- 165.5
- 178.6
162.7
146.0
136.2
- 44.9
- 97.1
- 131.0
- 164.2
- 178.0
169.8
155.6
140.0
131.3
- 52.0
- 105.2
- 139.3
- 172.8
174.6
164.9
152.9
137.5
128.5
- 56.8
- 110.3
- 144.7
- 177.3
171.1
162.3
151.6
135.8
128.2
- 61.1
- 114.6
- 148.9
178.0
167.6
159.3
149.0
134.7
128.4
12.66
8.32
5.67
3.77
3.11
2.67
2.21
1.91
1.76
19.22
10.24
6.59
4.26
3.48
2.98
2.46
2.12
1.95
22.81
10.94
6.91
4.45
3.62
3.09
2.54
2.19
2.01
24.86
11.22
7.03
4.49
3.66
3.13
2.58
2.21
2.04
26.06
11.32
7.05
4.51
3.66
3.13
2.57
2.21
2.04
LIN
MAG
S21
ANG
deg
152.2
117.3
99.8
85.0
77.8
71.1
62.1
54.0
49.4
142.3
108.0
93.8
81.6
75.4
69.5
61.4
54.1
49.9
136.3
103.8
91.3
80.0
74.3
68.8
61.0
53.9
49.7
132.3
101.5
89.8
79.2
73.5
68.2
60.5
53.7
49.5
129.3
99.8
88.8
78.5
73.0
67.6
60.1
53.2
48.9
0.028
0.058
0.075
0.099
0.117
0.135
0.163
0.194
0.215
0.025
0.050
0.071
0.102
0.124
0.147
0.179
0.212
0.235
0.023
0.047
0.070
0.104
0.128
0.151
0.185
0.219
0.243
0.022
0.046
0.070
0.105
0.130
0.153
0.188
0.222
0.246
0.021
0.045
0.070
0.106
0.131
0.154
0.190
0.224
0.248
LIN
MAG
S12
ANG
deg
72.8
57.8
56.7
59.8
61.8
62.6
63.3
63.3
62.7
69.9
62.8
64.8
66.9
67.2
66.7
65.4
63.6
62.0
69.3
66.5
68.4
69.5
69.0
68.1
66.0
63.8
61.8
68.6
68.6
70.5
70.9
70.1
68.6
66.2
63.8
61.8
68.7
69.6
71.5
71.5
70.5
69.0
66.4
63.8
61.7
0.914
0.661
0.537
0.487
0.485
0.481
0.466
0.455
0.454
0.832
0.539
0.441
0.415
0.423
0.424
0.409
0.398
0.397
0.774
0.484
0.405
0.390
0.401
0.403
0.388
0.377
0.375
0.732
0.455
0.387
0.380
0.391
0.393
0.378
0.367
0.365
0.702
0.438
0.378
0.374
0.387
0.389
0.374
0.364
0.361
LIN
MAG
S22
ANG
deg
- 15.0
- 27.4
- 26.9
- 23.8
- 24.2
- 26.8
- 31.3
- 35.0
- 38.4
- 21.0
- 29.0
- 25.0
- 20.4
- 21.1
- 24.2
- 29.0
- 32.6
- 36.2
- 23.9
- 28.5
- 23.3
- 18.3
- 19.4
- 22.7
- 27.8
- 31.4
- 35.3
- 25.5
- 27.6
- 21.9
- 16.9
- 18.2
- 21.8
- 27.1
- 30.9
- 34.7
- 26.4
- 26.5
- 20.6
- 16.0
- 17.5
- 21.2
- 26.6
- 30.5
- 34.4
Document Number 85035
Rev. 1.6, 08-Sep-08
www.vishay.com
3
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
F -
Noise
Figure (dB)
100
80
60
l
40
20
0
0
5
10
15
T
L
=constant
20
25
30
l – Lead Length ( mm )
l
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
12897
V
CE
=
8 V
f =
800
MHz
Z
S
= 50
5
10
15
20
25
30
96 12151
I
C
- Collector Current (mA)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Noise Figure vs. Collector Current
7000
f
T
- Transition Frequency (MHz)
6000
5000
4000
3000
2000
1000
0
0
13590
V
CE
= 5
V
f = 500 MHz
8
16
24
32
40
I
C
- Collector Current (mA)
Figure 2. Transition Frequency vs. Collector Current
1.0
C
cb
- Collector Base Capacitance (pF)
0.8
0.6
0.4
0.2
f = 1 MHz
0.0
0
4
8
12
16
20
V
CB
- Collector Base
Voltage
(V)
13591
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
www.vishay.com
4
Document Number 85035
Rev. 1.6, 08-Sep-08
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
V
CE
= 8 V, I
C
= 25 mA, Z
0
= 50
Ω
S
11
S
21
j
j0.5
j2
150°
j0.2
2.0 GHz
0
0.2
1.0
0.3
- j0.2
0.1
- j0.5
13534
90°
120°
60°
30°
0.1
0.3
j5
1
2
5
180°
2.0 GHz 20
40
0°
- j5
- 150°
- j2
-j
- 120°
13536
- 30°
- 60°
- 90°
Figure 5. Input Reflection Coefficient
Figure 7. Forward Transmission Coefficient
S
12
S
22
90°
120°
1.0
0.5
180°
0.1
2.0 GHz
60°
1.5
30°
j0.2
j
j0.5
j2
150°
j5
0.08
0.16
0°
0
0.2
0.5
1
0.8
2.0 GHz
5
0.1
- j0.2
- j5
- 150°
- 30°
- j0.5
- j2
-j
- 120°
13535
- 60°
- 90°
13537
Figure 6. Reverse Transmission Coefficient
Figure 8. Output Reflection Coefficient
Document Number 85035
Rev. 1.6, 08-Sep-08
www.vishay.com
5
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