Si4856ADY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
D
TrenchFETr Power MOSFETS
D
100% R
g
Tested
I
D
(A)
17
14
r
DS(on)
(W)
0.0052 @ V
GS
= 10 V
0.0076 @ V
GS
= 4.5 V
Q
g
(Typ)
21
APPLICATIONS
D
Buck Converter
D
Synchronous Rectifier
−
Secondary Rectifier
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4856ADY—E3
Si4856ADY-T1—E3 (with Tape and Reel)
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current (T
J
= 150_C)
a, b
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Pulse Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
0.1
T
C
= 25_C
Maximum Power Dissipation
a
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
SM
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
30
"20
26
21
17
14
"50
2.7
50
45
100
6.5
4.2
3.0
2.0
−55
to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)
a
Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. t = 10 sec
Document Number: 73239
S-50031—Rev. A, 17-Jan-05
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
34
67
15
Maximum
41
80
19
Unit
_C/W
C/W
1
Si4856ADY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
V
DS
DV
DS/Tj
DV
GS(th)/Tj
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 14 A
V
DS
= 15 V, I
D
= 17 A
I
S
= 2.7 A, V
GS
= 0 V
40
0.0043
0.0063
57
0.72
1.1
0.0052
0.0076
1.5
30
24
−6.2
"100
1
5
2.5
V
mV/_C
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= 2.7 A, di/dt = 100 A/ms
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.7
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 17 A
21
8.2
7.2
1.5
18
15
57
20
40
36
2.3
27
23
90
30
60
60
nC
ns
W
32
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
50
40
30
20
3V
10
0
0.0
V
GS
= 10 thru 4 V
60
50
40
30
20
10
0
0.0
T
C
= 125_C
Transfer Characteristics
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
25_C
−55_C
0.4
0.8
1.2
1.6
2.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 73239
S-50031—Rev. A, 17-Jan-05
2
Si4856ADY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0080
0.0075
r
DS(on)
−
On-Resistance (
W
)
0.0070
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0
10
20
30
40
50
0
0
6
12
18
24
30
V
GS
= 10 V
3000
C
−
Capacitance (pF)
V
GS
= 4.5 V
2400
1800
1200
C
oss
600
C
rss
Vishay Siliconix
On-Resistance vs. Drain Current
3600
Capacitance
C
iss
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
6
I
D
= 17 A
V
GS
−
Gate-to-Source Voltage (V)
5
4
Gate Charge
V
DS
= 10 V
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 17 A
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
30
15 V
20 V
1.2
3
2
1
0
0
6
12
18
24
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.025
On-Resistance vs. Gate-to-Source Voltage
I
D
= 17 A
I
S
−
Source Current (A)
10
r
DS(on)
−
On-Resistance (
W
)
T
J
= 150_C
0.020
0.015
1
T
J
= 25_C
0.010
T
J
= 125_C
0.005
T
J
= 25_C
0.000
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
−
Source-to-Drain Voltage (V)
Document Number: 73239
S-50031—Rev. A, 17-Jan-05
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
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3
Si4856ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
−0.0
−0.2
−0.4
−0.6
−0.8
−50
40
I
D
= 250
mA
200
Single Pulse Power
160
Power (W)
120
80
0
−25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
−
Temperature (_C)
100
* Limited by
r
DS(on)
10
I
D
−
Drain Current (A)
Safe Operating Area
1 ms
10 ms
1
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
0.1
T
C
= 25_C
Single Pulse
2
1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
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4
Document Number: 73239
S-50031—Rev. A, 17-Jan-05
Si4856ADY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73239.
Document Number: 73239
S-50031—Rev. A, 17-Jan-05
www.vishay.com
5
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