电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

T95R157K010LBBS

产品描述CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 150 uF, SURFACE MOUNT, 2824, CHIP
文件大小92KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

T95R157K010LBBS概述

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 150 uF, SURFACE MOUNT, 2824, CHIP

T95R157K010LBBS规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
Objectid1741328385
包装说明, 2824
Reach Compliance Codecompliant
Country Of OriginIsrael
ECCN代码EAR99
YTEOL5.25
电容150 µF
电容器类型TANTALUM CAPACITOR
介电材料TANTALUM (DRY/SOLID)
JESD-609代码e0
漏电流0.015 mA
制造商序列号T95
安装特点SURFACE MOUNT
负容差10%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状RECTANGULAR PACKAGE
包装方法TR, 7 INCH
极性POLARIZED
正容差10%
额定(直流)电压(URdc)10 V
尺寸代码2824
表面贴装YES
Delta切线0.08
端子面层Tin/Lead (Sn/Pb)
端子形状WRAPAROUND

文档预览

下载PDF文档
T95
Vishay Sprague
Solid Tantalum Chip Capacitors
T
ANTAMOUNT
®
Hi-Rel COTS, Conformal Coated Case
FEATURES
High reliability; Weibull grading available
Surge Current Testing per MIL-PRF-55365
options available
Standard and Low ESR options
Terminations: SnPb, Standard. 100 % Tin
available
Pb-free
Available
RoHS*
COMPLIANT
PERFORMANCE/ELECTRICAL CHARACTERISTICS
Operating Temperature:
- 55 °C to + 85 °C
(To + 125 °C with voltage derating)
Capacitance Range:
0.1 µF to 680 µF
Capacitance Tolerance:
± 20 %, ± 10 % standard
Voltage Rating:
4 WVDC to 50 WVDC
ORDERING INFORMATION
T95
D
TYPE CASE
CODE
See
Ratings
and
Case
Codes
Table.
107
CAPACITANCE
This is expressed
in picofarads. The
first two digits are
the significant
figures. The third is
the number of
zeros to follow.
K
CAPACITANCE
TOLERANCE
K = ± 10 %
M = ± 20 %
010
DC VOLTAGE
RATING AT + 85 °C
This is expressed in
volts. To complete the
three-digit block, zeros
precede the voltage
rating. A decimal point
is indicated by an “R”
(6R3 = 6.3 V).
E
TERMINATION AND
PACKAGING
E: Sn/Pb Solder/7"
(178 mm) reels
L: Sn/Pb Solder/7"
(178 mm) ½ reel
C: 100 % Tin/7"
(178 mm) reels
H: 100 % Tin/7"
(178 mm) ½ reel
A
RELIABILITY
LEVEL
A = 1.0 %
Weibull
B = 0.1 %
Weibull**
S = Hi-Rel
Standard
Burn-in
Z = Non-
Established
Reliability
A
SURGE CURRENT
A = 10 cycles at
+ 25 °C
B = 10 cycles at
- 55 °C/+ 85 °C
S = 3 cycles at
+ 25 °C
Z = none
S
ESR
S = Std
L = Low
DIMENSIONS
in inches [millimeters]
Tantalum Wire
Nib Identifies
Anode (+)
Term inal
W
L
D
A
H
B
J
J
CASE
CODE
B
L (MAX.)
W
H
A
B
0.097 ± 0.016
[2.5 ± 0.4]
0.180 ± 0.024
[4.6 ± 0.6]
0.180 ± 0.024
[4.6 ± 0.6]
0.180 ± 0.024
[4.6 ± 0.6]
0.085 ± 0.015
[2.16 ± 0.37]
0.085 ± 0.015
[2.16 ± 0.37]
0.200 ± 0.027
[5.08 ± 0.69]
0.200 ± 0.027
[5.08 ± 0.69]
0.200 ± 0.027
[5.08 ± 0.69]
D (REF.)
0.138
[3.5]
0.236
[6.0]
0.253
[6.4]
0.243
[6.2]
0.115
[2.9]
0.115
[2.9]
0.243
[6.2]
0.243
[6.2]
0.243
[6.2]
J (MAX.)
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.004
[0.1]
0.158
0.110 + 0.012 - 0.016 0.075 + 0.012 - 0.024
0.031 ± 0.012
[4.0]
[2.8 + 0.3 - 0.4]
[1.9 + 0.3 - 0.6]
[0.80 ± 0.30]
0.281
0.126 ± 0.012
0.098 ± 0.012
0.051 ± 0.012
C
[7.1]
[3.2 ± 0.3]
[2.5 ± 0.3]
[1.3 ± 0.30]
0.293
0.170 ± 0.012
0.110 ± 0.012
0.051 ± 0.012
D
[7.5]
[4.3 ± 0.3]
[2.8 ± 0.3]
[1.3 ± 0.30]
0.283
0.235 ± 0.012
0.136 ± 0.012
0.051 ± 0.012
R
[7.2]
[6.0 ± 0.3]
[3.5 ± 0.3]
[1.3 ± 0.30]
0.143
0.072 ± 0.008
0.048 ± 0.008
0.023 ± 0.010
S
[3.63]
[1.83 ± 0.2]
[1.22 ± 0.2]
[0.58 ± 0.25]
0.143
0.104 ± 0.010
0.051 ± 0.010
0.023 ± 0.010
V
[3.63]
[2.65 ± 0.25]
[1.3 ± 0.25]
[0.58 ± 0.25]
0.285
0.104 ± 0.010
0.051 ± 0.010
0.040 ± 0.020
X
[7.24]
[2.65 ± 0.25]
[1.3 ± 0.25]
[1.0 ± 0.5]
0.285
0.104 ± 0.010
0.069 ± 0.010
0.040 ± 0.020
Y
[7.24]
[2.65 ± 0.25]
[1.75 ± 0.25]
[1.0 ± 0.5]
0.285
0.104 ± 0.010
0.104 ± 0.010
0.040 ± 0.020
Z
[7.24]
[2.65 ± 0.25]
[2.65 ± 0.25]
[1.0 ± 0.5]
Note:
The anode termination (D less B) will be a minimum of 0.010" (0.25 mm)
* Pb containing terminations are not RoHS compliant, exemptions may apply
** Weibull 0.1 % may not be available on all ratings. See detailed notes in ratings table or contact marketing for availability.
Document Number: 40081
Revision: 20-Nov-07
For technical questions, contact: tantalum@vishay.com
www.vishay.com
149
高质量C/C++编程指南
高质量C/C++编程指南...
thtlj 嵌入式系统
有想要ARM视频讲座的么?
本帖最后由 paulhyde 于 2014-9-15 09:38 编辑 进来后跟帖,我就发 ...
Yound 电子竞赛
弱问,关于网络驱动程序
首先,我是新手,没有接触过网卡驱动程序开发,仅看过windows上一个中间层的驱动代码。 我有些问题: ndis仅仅是windows上的东西吗? windows上开发一个驱动程序必须按照ndis吗? ......
saber_tooth 嵌入式系统
链接问题
https://www.eeworld.com.cn/huodong/TI_LaunchPad_20120510/ 右边赞助商TI图标连接地址是http://www.analog.com/zh/circuits-from-the-lab/index.html...
littleshrimp 为我们提建议&公告
问个菜鸟问题
驱动开发中如何定义寄存器啊? VINT32 xx; 类似这样定义?...
chrisclover 嵌入式系统
求代码
发送IRP_MJ_CREATE给FSD创建新文件, 求您给段代码,多谢!...
lc123300798 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2804  832  2855  205  2684  57  17  58  5  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved