SiT1579
1.2 mm
2
µPower, Low-Jitter, 1 Hz – 2.5 MHz Oscillator
Features
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Applications
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1 Hz to 2.5 MHz ±50 ppm all-inclusive frequency stability
Factory programmable output frequency
World’s smallest Oscillator Footprint: 1.2 mm
2
▪
1.5 x 0.8 mm CSP
▪
No external bypass cap required
Improved stability reduces system power with fewer
network timekeeping updates
Ultra-low power: 6 µA (100 kHz)
Supply voltage range: 1.62 V to 3.63 V
Operating temperature ranges: -20°C to +70°C, -40°C to +85°C
Pb-free, RoHS and REACH compliant
Health and wellness monitors
Smart pens
ULP input devices
Proprietary wireless
Sensor interface
Electrical Characteristics
Table 1. Electrical Characteristics
Conditions: Min/Max limits are over temperature, V
DD
= 1.8 V ±10%, unless otherwise stated. Typicals are at 25°C and V
DD
= 1.8 V.
Parameter
Symbol
F
OUT
F_tol
F_stab
Min.
Typ.
Max.
Unit
Condition
Frequency and Stability
Output Frequency
Initial Frequency Tolerance
Frequency Stability
1
-10
-50
2.5 M
10
50
Hz
ppm
ppm
Includes 2x reflow
All inclusive of over temperature, referenced to nominal
frequency at 25°C, inclusive of V
DD
, aging, and load
F
OUT
> 1 kHz. Integration bandwidth = 100 Hz to F
OUT
/2.
Inclusive of 50 mV peak-to-peak sinusoidal noise on V
DD
. Noise
frequency 100 Hz to 20 MHz
Cycles = 10,000, f = 100 kHz. Per JEDEC standard 65B, tested
at 100 kHz. See performance plot for other frequencies.
Jitter Performance
Integrated Phase Jitter
RMS Period Jitter
IPJ
PJ
2
2.2
3.5
4.5
ns
RMS
ns
RMS
Supply Voltage and Current Consumption
Operating Supply Voltage
V
DD
1.62
3.65
I
DD
4.5
6
13
33
150
300 +
2.0 cycles
3.63
5
5.5
7
16
40
300
300 +
2.5 cycles
500 +
3 cycles
µA
V
F
OUT
= 1 Hz
F
OUT
= 33 kHz
F
OUT
= 100 kHz
F
OUT
= 1 MHz
F
OUT
= 2 MHz
Measured when supply reaches 90% of final V
DD
to the first output
pulse and within specified min/max frequency limit.
10 Hz < F
OUT
≤ 200 Hz, to first output pulse.
Measured when supply reaches 90% of final V
DD
to the first output
pulse and within specified min/max frequency limit.
1 Hz
≤
F
OUT
≤ 10 Hz, to first output pulse.
Measured when supply reaches 90% of final V
DD
to the first output
pulse and within specified min/max frequency limit.
“C” ordering code
“I” ordering code
20-80%, 15 pF load, V
DD
= 1.8 V ±10%
I
OH
= -50 µA, 15 pF load
I
OL
= 50 µA, 15 pF load
No Load Supply Current
Start-up Time at Power-up
t_start
ms
Operating Temperature Range
Operating Temperature Range
-20
Op_Temp
-40
70
85
°C
°C
LVCMOS Output
Output Rise/Fall Time
Output Clock Duty Cycle
Output Voltage High
Output Voltage Low
t
R
, t
F
DC
VOH
VOL
45
90%
10%
9
20
55
ns
%
V
DD
V
DD
Note:
1. Includes initial tolerance, over temp stability, 2x reflow, V
DD
range, board-level underfill, and 20% load variation. Tested with Agilent 53132A frequency
counter. Measured with ≥100 ms gate time for accurate frequency measurement.
Rev 1.11
29 March 2021
www.sitime.com
SiT1579
1.2 mm
2
µPower, Low-Jitter, 1 Hz – 2.5 MHz Oscillator
Table 2. Pin Configuration
Pin
1
2
Symbol
NC
CLK Out
I/O
Internal Test
OUT
Functionality
No Connect. Leave floating. Pin 1 is for internal testing and is designed
to be left floating.
Oscillator clock output.
Operates from nominal supply voltages between 1.8 V and 3.3 V.
Under normal operating conditions, V
DD
does not require external
bypass/decoupling capacitor(s).
SiT1579 includes on-chip V
DD
filtering.
Connect to ground.
Top View
NC
1
4
GND
3
V
DD
Power Supply
CLK Out
2
3
Vdd
4
GND
Power Supply
Ground
Figure 1. Pin Assignment
Table 3. Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameters
Continuous Power Supply Voltage Range (V
DD
)
Continuous Maximum Operating Temperature Range
Short Duration Maximum Operating Temperature Range
Human Body Model (HBM) ESD Protection
Charge-Device Model (CDM) ESD Protection
Machine Model (MM) ESD Protection
Latch-up Tolerance
Mechanical Shock Resistance
Mechanical Vibration Resistance
1508 CSP Junction Temperature
Storage Temperature
Mil 883, Method 2002
Mil 883, Method 2007
≤ 30 minutes
JESD22-A114
JESD22-C101
JESD22-A115
JESD78 Compliant
20,000
70
150
-65 to 150
g
g
°C
°C
Test Conditions
Value
-0.5 to 4.0
105
125
2000
750
300
Unit
V
°C
°C
V
V
V
System Block Diagram
GND
Temp
Control
Temp-to-Digital
Prog
Prog
NVM
NC
Driver
CLK Out
Figure 2. SiT1579 Block Diagram
Rev 1.11
Page 2 of 8
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SiT1579
1.2 mm
2
µPower, Low-Jitter, 1 Hz – 2.5 MHz Oscillator
Description
SiT1579 is an ultra-small and ultra-low power Factory
programmable oscillator with an output frequency range
between 1 Hz to 2.5 MHz. SiTime’s silicon MEMS technology
enables the first programmable, µPower oscillator in the
world’s smallest footprint and chip-scale packaging (CSP).
Typical supply current is only 6 µA (100 kHz).
SiTime's MEMS oscillator consists of a MEMS resonator
and a programmable analog circuit. SiT1579 MEMS
resonator is built with SiTime’s unique MEMS First
®
process. A key manufacturing step is EpiSeal
®
during which
the MEMS resonator is annealed with temperatures over
1000°C. EpiSeal creates an extremely strong, clean,
vacuum chamber that encapsulates the MEMS resonator
and ensures the best performance and reliability. During
EpiSeal, a poly silicon cap is grown on top of the resonator
cavity, which eliminates the need for additional cap wafers
or other exotic packaging. As a result, SiTime’s MEMS
resonator die can be used like any other semiconductor die.
One unique result of SiTime’s MEMS First and EpiSeal
manufacturing processes is the capability to integrate
SiTime’s MEMS die with a SOC, ASIC, microprocessor or
analog die within a package to eliminate external timing
components and provide a highly integrated, smaller,
cheaper solution to the customer.
Frequency Stability
The SiT1579 oscillator is Factory trimmed to 32.768 kHz at
room temperature. The result is a very accurate oscillator at
room temperature and over temperature. Unlike quartz
crystals that have a classic tuning fork parabola
temperature curve with a 25°C turnover point with a 0.04 to
0.06 ppm/°C2 temperature coefficient (TCF), the SiT1579
temperature coefficient is calibrated at room temperature
and corrected over temperature with an active temperature
correction circuit. The result is <±50 ppm frequency
variation over the -40°C to +85°C temperature range.
When measuring the SiT1579 output frequency with a
frequency counter, it is important to make sure the
counter's gate time is >100 ms. Shorter gate times may
lead to inaccurate measurements.
Rev 1.11
Page 3 of 8
www.sitime.com
SiT1579
1.2 mm
2
µPower, Low-Jitter, 1 Hz – 2.5 MHz Oscillator
Typical Operating Curves
(T
A
= 25°C, V
DD
= 1.8 V, supply current plots are no load, unless otherwise stated)
Internal Caps Charging
Logic Start-up
NVM Read
OSC Start-up
Temperature
Compensation (13 µA)
Steady State
4.5
350ms
33 kHz
Figure 3. LVCMOS Output Swing
(V
DD
= 1.8 V)
4.5
Figure 4. Start-up and Steady-State
Current Profile
F
OUT
= 33 kHz
No Vdd bypass
Current (µA)
4.3
4.1
3.9
V
DD
= 3.3 V
3.7
10 nF Vdd bypass
3.5
V
DD
= 1.8 V
3.3
-40
-20
0
20
40
60
80
100
Temperature (°C)
Figure 5. Power Supply Noise Rejection
5
4.9
4.8
Figure 6. Supply Current vs Temperature
(F
OUT
= 1 Hz)
8
7.75
7.5
7.25
V
DD
= 3.3 V
4.7
Current (µA)
4.6
4.5
4.4
4.3
4.2
4.1
4
-40
-20
0
V
DD
= 3.3 V
7
Current (µA)
V
DD
= 1.8 V
6.75
6.5
6.25
6
5.75
5.5
5.25
5
V
DD
= 1.8 V
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 7. Supply Current vs Temperature
(F
OUT
= 100 Hz)
Figure 8. Supply Current vs Temperature
(F
OUT
= 100 kHz)
Rev 1.11
Page 4 of 8
www.sitime.com
SiT1579
1.2 mm
2
µPower, Low-Jitter, 1 Hz – 2.5 MHz Oscillator
Typical Operating Curves
(continuous)
(T
A
= 25°C, Vdd = 1.8 V, supply current plots are no load, unless otherwise stated)
18
17.25
16.5
15.75
15
32.5
31
29.5
V
DD
= 3.3 V
28
26.5
25
V
DD
= 3.3 V
Current (µA)
14.25
23.5
22
20.5
19
17.5
16
14.5
Current (µA)
13.5
12.75
12
11.25
10.5
9.75
V
DD
= 1.8 V
V
DD
= 1.8 V
13
11.5
10
-40
-20
0
20
40
60
80
100
9
-40
-20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 9. Supply Current vs Temperature
(F
OUT
= 500 kHz)
57
55
53
51
49
47
Figure 10. Supply Current vs Temperature
(F
OUT
= 1 MHz)
64
61
V
DD
= 3.3 V
58
55
52
49
V
DD
= 3.3 V
Current (µA)
45
43
41
39
37
Current (µA)
46
43
40
37
34
35
33
31
29
27
25
-40
-20
0
20
40
60
80
100
V
DD
= 1.8 V
31
28
25
-40
-20
0
20
V
DD
= 1.8 V
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 11. Supply Current vs Temperature
(F
OUT
= 1.85 MHz)
Figure 12. Supply Current vs Temperature
(F
OUT
= 2 MHz)
Rev 1.11
Page 5 of 8
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