Schottky Devices
MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz
• Low Capacitance. For Applications to 26.5 GHz
•
Silicon Dioxide / Silicon Nitride Passivation
•
Monolithic Glass Support Design
•
Ultra-Low through High Barrier
Heights
•
Monolithic Design Insures Matched
Junctions
•
Wafer Level “SPC”
DESCRIPTION
New Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad
configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic
packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design
eliminates the problems associated with wire bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion
loss through Ku Band. A broad range of unique metalization schemes produce Microsemi’s complete line of barrier
heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By
optimizing epitaxy and metalization, these devices achieve the lowest Rs-Cj products resulting in exceptional
conversion loss performance. “High Rel” screening is available on packaged devices per your requirements.
APPLICATIONS
SCHOTTKY Barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low
level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring
repeatable performance through Ku band. Single junction devices such as the style ‘S12’ are well suited for RF Mixers,
level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 pF, Monolithic Quads are
ideally suited for broadband double balanced mixer designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900
Series) are designed for mixers with low or starved Local Oscillator levels where optimal conversion loss is a must. High
barrier diodes, (GC9940 Series) are designed for applications where high drive levels are available, such as, Doppler
mixers or motion detection. Schottky diodes are available in Ultra-Low, Medium and High Drive levels to fit virtually any
circuit requirement.
Microsemi – Lowell
75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600
Schottky Devices
MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz
TABLE 1: ELECTRICAL SPECIFICATIONS AT T
A
=25°C
P/N
GC9901
GC9902
GC9903
GC9904
GC9911
GC9912
GC9913
GC9914
GC9921
GC9922
GC9923
GC9924
GC9931
GC9932
GC9933
GC9934
GC9941
GC9942
GC9943
GC9944
BARRIER
ULTRA-
LOW
FREQ.
RANGE
Ku-Ka
X
C
S
Ku-Ka
X
C
S
Ku-Ka
X
C
S
Ku-Ka
X
C
S
Ku-Ka
X
C
S
V
b
1
min
(V)
2.0
C
j2
max
(pF)
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
V
f 3
max
(mV)
340
310
300
280
360
350
340
330
470
460
440
420
550
540
530
510
660
640
630
610
R
d4
max
(Ω)
20.0
16.0
14.0
12.0
20.0
16.0
14.0
12.0
20.0
16.0
14.0
12.0
20.0
16.0
14.0
12.0
20.0
16.0
14.0
12.0
Nf
ssp5
TYP (dB)
6.50
6.00
5.50
5.50
6.50
6.00
5.50
5.50
6.50
6.00
5.50
5.50
6.75
6.25
5.75
5.50
7.00
6.25
5.75
5.75
Z
if6
typ
(Ω)
140
LOW
2.0
170
LOW-MED
2.0
200
MEDIUM
3.0
250
HIGH
4.0
300
CONDITIONS
1. V b measured at 10µA (N/A on ring quads).
2. 0 Volts, F=1 MHz (diagonal leads on quads).
3. I f = 1.0 mA
4. I f = 5.0 mA
5. L.O. = 0 dBm, N
if
= 1.5 dB, F = 10 GHz
6. L.O. = 0 dBm
MAXIMUM RATING
T
oper
: -65 to 150°C
T
stg
: -65 to 170°C
Power Handling: 100 mW
(Derate Linearly to zero at 150°C)
NOTE
When ordering, specify appropriate package style.
Specifications subject to change without notice.
Microsemi – Lowell
75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600
传感器
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