c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 80 °C/W
f. Package limited
S19-0391-Rev. A, 29-Apr-2019
Document Number: 77080
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2.
05
m
m
APPLICATIONS
•
•
•
•
Battery charging and management
Load switch
DC/DC converters
G
Power management in battery-operated,
mobile and wearable devices
P-Channel
MOSFET
S
D
I
D
A
I
DM
I
S
P
D
T
J
, T
stg
W
°C
SYMBOL
t
5s
Steady state
R
thJA
R
thJC
TYPICAL
29
5.5
MAXIMUM
37
7
UNIT
°C/W
SiA483ADJ
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -8.5 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -10 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 1.8
,
I
D
-8.5 A,
V
GEN
= -10 V, R
g
= 1
V
DD
= -15 V, R
L
= 1.8
,
I
D
-8.5 A,
V
GEN
= -4.5 V, R
g
= 1
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10.6 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10.6 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10.6 A
f = 1 MHz
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= -20 V / +16 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= 0 V
V
GS
= -10 V, I
D
= -5 A
V
GS
= -4.5 V, I
D
= -3 A
V
DS
= -10 V, I
D
= -5 A
MIN.
-30
-
-
-1
-
-
-
-10
-
-
-
-
-
-
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-26
5
-
-
-
-
-
0.016
0.025
25
950
460
50
17
8.3
3.7
3
8.8
26
95
24
16
12
6
30
8
-
-
-0.85
19
7
9
10
MAX.
-
-
-
-2.5
± 100
-1
-10
-
0.020
0.033
-
-
-
-
26
12.5
-
-
15
52
190
80
32
24
12
60
16
-12
-60
-1.2
38
14
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0391-Rev. A, 29-Apr-2019
Document Number: 77080
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA483ADJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
60
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
70
10000
56
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
45
V
GS
= 4 V
1000
1st line
2nd line
T
C
= -55 °C
1000
T
C
= 125 °C
30
100
15
V
GS
= 3 V
28
100
14
T
C
= 25 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1.5
3
4.5
6
V
GS
- Gate-to-Source Voltage (V)
10
Output Characteristics
Axis Title
0.060
10000
10 000
Transfer Characteristics
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
1000
1st line
2nd line
0.030
V
GS
= 4.5 V
2nd line
C - Capacitance (pF)
0.045
1000
C
iss
C
oss
1000
1st line
2nd line
100
10
30
10000
1000
100
10
1st line
2nd line
V
GS
= 10 V
100
100
C
rss
0.015
0
0
10
20
I
D
- Drain Current (A)
30
40
10
10
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Axis Title
10
I
D
=10.6 A
Capacitance
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.5
V
GS
= 10 V, 5 A
2nd line
V
GS
- Gate-to-Source Voltage (V)
8
1000
1st line
2nd line
6
V
DS
= 8 V, 15 V, 24 V
1.3
1.1
V
GS
= 4.5 V, 3 A
4
100
2
0.9
0
0
3
6
9
12
15
18
Q
g
- Total Gate Charge (nC)
10
0.7
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S19-0391-Rev. A, 29-Apr-2019
Document Number: 77080
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
42
SiA483ADJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.06
I
D
= 5A
Vishay Siliconix
Axis Title
10000
2nd line
I
S
- Source Current (A)
10
2nd line
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.05
1000
0.04
0.03
0.02
0.01
T
J
= 25 °C
1000
1st line
2nd line
100
10
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
1
T
J
= 25 °C
1st line
2nd line
T
J
= 125 °C
100
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
10
0
Source-Drain Diode Forward Voltage
Axis Title
2.0
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
10000
30
25
1.8
2nd line
V
GS(th)
(V)
1000
1st line
2nd line
1.6
Power (W)
20
15
10
5
1.4
100
1.2
1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
10
0
0.001
0.01
0.1
1
10
Time (s)
100
1000
Threshold Voltage
Axis Title
100
I
DM
limited
Single Pulse Power, Junction-to-Ambient
10000
10
2nd line
I
D
- Drain Current (A)
100 μs
1 ms
1000
1st line
2nd line
1
Limited by R
DS(on)
a
10 ms
100 ms
10 s, 1 s
DC
0.1
100
0.01
T
A
= 25 °C,
single pulse
BVDSS limited
0.001
0.01
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
S19-0391-Rev. A, 29-Apr-2019
Document Number: 77080
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA483ADJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
28
10000
Vishay Siliconix
2nd line
I
D
- Drain Current (A)
21
1000
14
100
7
1st line
2nd line
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
Current Derating
a
Axis Title
20
2
10000
Power Dissipation (W)
15
2nd line
P - Power (W)
1.5
1000
1
100
0.5
1st line
2nd line
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
10
5
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S19-0391-Rev. A, 29-Apr-2019
Document Number: 77080
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AI分布式渲染架构提升手机渲染能力，游戏性能测试实时可查帧生成指标 中国上海，2025年8月20日——专业的图像和显示处理方案提供商 逐点半导体今日宣布，新发布的真我P4 5G、真我P4 Pro 5G智能手机搭载逐点半导体X7 Gen 2视觉处理器 。该处理器通过集成的分布式渲染解决方案，可降低GPU算力负担，大幅提升手机渲染能力。这也是海外中端市场同级产品中，首个集成专业视觉处理器的智能手...[详细]
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