LTC5567
300MHz to 4GHz Active
Downconverting Mixer with
Wideband IF
FeaTures
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DescripTion
The LTC
®
5567 is optimized for RF downconverting mixer
applications that require wide IF bandwidth. The part is
also a pin-compatible upgrade to the LT5557 active mixer,
offering higher linearity and 1dB compression, wider
bandwidth, and lower output spurious levels. Integrated
RF and LO transformers and LO buffer amplifiers allow a
very compact solution.
The RF input is 50Ω matched from 1.4GHz to 3GHz, and
easily matched for higher or lower RF frequencies with
simple external matching. The LO input is 50Ω matched
from 1GHz to 4GHz, even when the IC is disabled. The LO
input is easily matched for higher or lower frequencies, as
low as 300MHz, with simple external matching. The low
capacitance differential IF output is usable up to 2.5GHz.
L,
LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
High IIP3: +26.9dBm at 1950MHz
1.9dB Conversion Gain
Low Noise Figure: 11.8dB at 1950MHz
16.5dB NF Under 5dBm Blocking
Low Power: 294mW
Wide IF Frequency Range Up to 2.5GHz
LO Input 50Ω Matched when Shutdown
–40°C to 105°C Operation (T
C
)
Very Small Solution Size
Pin Compatible with LT5557
16-Lead (4mm
×
4mm) QFN package
applicaTions
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Wireless Infrastructure Receivers
DPD Observation Receivers
CATV Infrastructure
Typical applicaTion
DPD Observation Receiver Mixer with 500MHz IF Bandwidth and
+13dBm Input P1dB into 200Ω Load
LO
1.65GHz
0dBm
LTC5567
3.9pF
330pF
IF
+
249
390nH
100
IF
AMP
RF
IF
–
IADJ
249
390nH
100
200
LOAD
G
V
(dB), IIP3 (dBm), SSB NF (dB)
LO
28
26
24
22
20
18
16
14
12
10
8
6
4
G
V
40 90 140 190 240 290 340 390 440 490 540 590
IF FREQUENCY (MHz)
5567
TA01b
Voltage Conversion Gain, IIP3
and NF vs IF Frequency
IIP3
RF = 1.69GHz TO 2.24GHz
LO = 1.65GHz
Z
RF
= 50
Z
IF
= 200 DIFFERENTIAL
T
C
= 25°C
NF
RF
1.69GHz
TO
2.24GHz
2.7pF
RF
LO
EN
EN
BIAS
V
CC
10nF
330pF
10nF
3.3V
89mA
5567 TA01a
5567f
1
LTC5567
absoluTe MaxiMuM raTings
(Note 1)
pin conFiguraTion
TOP VIEW
GND
GND
12 GND
17
GND
11 IF
+
10 IF
–
9
5
EN
6
V
CC
7
NC
8
IADJ
GND
NC
LO
16 15 14 13
TEMP 1
GND 2
RF 3
GND 4
Supply Voltage (V
CC
, IF
+
, IF
–
) ..................................4.0V
Enable Input Voltage (EN) ................–0.3V to V
CC
+ 0.3V
LO Input Power (300MHz to 4.5GHz) ................. +10dBm
LO Input DC Voltage............................................... ±0.1V
RF Input Power (300MHz to 4GHz) .................... +15dBm
RF Input DC Voltage ............................................... ±0.1V
TEMP Monitor Input Current ..................................10mA
Operating Temperature Range (T
C
) ........ –40°C to 105°C
Junction Temperature (T
J
) .................................... 150°C
Storage Temperature Range .................. –65°C to 150°C
UF PACKAGE
16-LEAD (4mm
×
4mm) PLASTIC QFN
T
JMAX
= 150°C,
θ
JC
= 8°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
orDer inForMaTion
LEAD FREE FINISH
LTC5567IUF#PBF
TAPE AND REEL
LTC5567IUF#TRPBF
PART MARKING
5567
PACKAGE DESCRIPTION
16-Lead (4mm
×
4mm) Plastic QFN
CASE TEMPERATURE RANGE
–40°C to 105°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
ac elecTrical characTerisTics
(Notes 2, 3, 4)
PARAMETER
RF Input Frequency Range
LO Input Frequency Range
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
LO Input Power
RF to LO Isolation
RF to IF Isolation
CONDITIONS
V
CC
= 3.3V, EN = High. Test circuit shown in Figure 1.
MIN
TYP
300 to 4000
300 to 4500
MAX
UNITS
MHz
MHz
MHz
dB
dB
R||C
6
dBm
dB
dB
dB
dB
dB
External Matching Required
Z
O
= 50Ω, 1400MHz to 3000MHz, C3 = 2.7pF
Z
O
= 50Ω, 1000MHz to 4000MHz, C5 = 3.9pF
Differential at 153MHz
–6
RF = 300MHz to 1000MHz
RF = 1000MHz to 4000MHz
RF = 300MHz to 700MHz
RF = 700MHz to 1000MHz
RF = 1000MHz to 4000MHz
5 to 2500
>12
>10
532Ω ||1.0pF
0
>59
>50
>47
>40
>28
5567f
2
LTC5567
ac elecTrical characTerisTics
PARAMETER
Power Conversion Gain
CONDITIONS
RF = 450MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2550MHz, Low Side LO
RF = 3500MHz, Low Side LO
RF = 1950 ±30MHz, LO = 1797MHz, IF = 153 ±30MHz
T
C
= –40°C to 105ºC, RF = 1950MHz, Low Side LO
RF = 450MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2550MHz, Low Side LO
RF = 3500MHz, Low Side LO
RF = 450MHz (527MHz/373MHz), LO = 603MHz
RF = 850MHz (927MHz/773MHz), LO = 1003MHz
RF = 1950MHz (2027MHz/1873MHz), LO = 1797MHz
RF = 2550MHz (2627MHz/2473MHz), LO = 2397MHz
RF = 3500MHz (3577MHz/3423MHz), LO = 3347MHz
RF = 450MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2550MHz, Low Side LO
RF = 3500MHz, Low Side LO
RF = 850MHz, High Side LO, 750MHz Blocker at 5dBm
RF = 1950MHz, Low Side LO, 2050MHz Blocker at 5dBm
LO = 300MHz to 700MHz
LO = 700MHz to 2200MHz
LO = 2200MHz to 4500MHz
LO = 300MHz to 500MHz
LO = 500MHz to 700MHz
LO = 700MHz to 4500MHz
850MHz: f
RF
= 926.5MHz at –6dBm, f
LO
= 1003MHz
1950MHz: f
RF
= 1873.5MHz at –6dBm, f
LO
= 1797MHz
850MHz: f
RF
= 952MHz at –6dBm, f
LO
= 1003MHz
1950MHz: f
RF
= 1848MHz at –6dBm, f
LO
= 1797MHz
RF = 450MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2550MHz, Low Side LO
RF = 3500MHz, Low Side LO
24.2
V
CC
= 3.3V, EN = High. T
C
= 25°C, P
LO
= 0dBm, IF = 153MHz,
P
RF
= –6dBm (–6dBm/tone for 2-tone tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
MIN
TYP
1.5
2.0
1.9
1.7
1.2
±0.09
–0.013
26.0
26.7
26.9
26.0
26.5
67
64
72
71
63
12.5
11.4
11.8
12.6
14.6
16.5
16.5
<–62
<–56
<–47
<–43
<–37
<–41
–78
–73
–82
–80
11.0
10.9
10.1
10.2
10.4
MAX
UNITS
dB
dB
dB
dB
dB
dB
dB/°C
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBm
0.8
Conversion Gain Flatness
Conversion Gain vs Temperature
2-Tone Input 3rd Order Intercept (∆f
RF
= 2MHz)
2-Tone Input 2nd Order Intercept
(∆f
RF
= 154MHz = f
IM2
)
SSB Noise Figure
13.5
SSB Noise Figure Under Blocking
LO to RF Leakage
LO to IF Leakage
1/2IF Output Spurious Product
(f
RF
Offset to Produce Spur at f
IF
= 153MHz)
1/3IF Output Spurious Product
(f
RF
Offset to Produce Spur at f
IF
= 153MHz)
Input 1dB Compression
5567f
3
LTC5567
Dc elecTrical characTerisTics
PARAMETER
Supply Voltage (V
CC
)
Supply Current
Enable Logic Input (EN)
Input High Voltage (On)
Input Low Voltage (Off)
Input Current
Turn-On Time
Turn-Off Time
Mixer DC Current Adjust (IADJ)
Open-Circuit DC Voltage
Short-Circuit DC Current
Temperature Sensing Diode (TEMP)
DC Voltage at T
J
= 25°C
Voltage Temperature Coefficient
I
IN
= 10µA
I
IN
= 80µA
I
IN
= 10µA
I
IN
= 80µA
716
773
–1.75
–1.56
mV
mV
mV/°C
mV/°C
Pin Shorted to Ground
2.2
1.8
V
mA
–0.3V to V
CC
+ 0.3V
–30
0.6
0.5
2.5
0.3
100
V
V
µA
µs
µs
Enabled
Disabled
EN = High
EN = Low
CONDITIONS
V
CC
= 3.3V, T
C
= 25°C. Test circuit shown in Figure 1. (Note 2)
MIN
3.0
TYP
3.3
89
MAX
3.6
105
100
UNITS
V
mA
µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
The LTC5567 is guaranteed functional over the –40°C to 105°C
case temperature range (θ
JC
= 8°C/W).
Note 3:
SSB Noise Figure measured with a small-signal noise source,
bandpass filter and 2dB matching pad on RF input, and bandpass filter on
the LO input.
Note 4:
Specified performance includes 4:1 IF transformer and evaluation
PCB losses.
Typical Dc perForMance characTerisTics
Supply Current vs Supply Voltage
98
96
TEMP DIODE VOLTAGE (mV)
SUPPLY CURRENT (mA)
94
92
90
88
86
84
3.0
3.1
3.4
3.3
3.5
3.2
V
CC
SUPPLY VOLTAGE (V)
3.6
5567 G01
EN = High, Test circuit shown in Figure 1.
TEMP Diode Voltage vs Junction
Temperature
900
850
800
750
700
650
600
550
500
–45
5
30
55
80 105
–20
JUNCTION TEMPERATURE (°C)
130
I
IN
= 10µA
I
IN
= 80µA
T
C
= 105°C
T
C
= 85°C
T
C
= 55°C
T
C
= 25°C
T
C
= –10°C
T
C
= –40°C
5567 G02
5567f
4
LTC5567
Typical perForMance characTerisTics
1400MHz to 3000MHz application. Test circuit shown in
Figure 1. V
CC
= 3.3V, P
LO
= 0dBm, P
RF
= –6dBm (–6dBm/tone for 2-tone IIP3 tests,
∆f
= 2MHz), IF = 153MHz unless otherwise noted.
Conversion Gain, IIP3 and NF
vs RF Frequency (Low Side LO)
30
28
26
IIP3 (dBm), NF (dB)
24
22
20
18
16
14
12
10
NF
1.4 1.6
1.8 2.0 2.2 2.4 2.6
RF FREQUENCY (GHz)
2.8
G
C
2
T
C
= 25°C 3
G
C
(dB)
IIP3
5
G
C
(dB), IIP3 (dBm), SSB NF (dB)
1950MHz Conversion Gain, IIP3
and NF vs LO Power (Low Side LO)
28
26
24 IIP3
22
20
18
16
NF
14
12
10
8
6
4 G
C
2
0
–4
–6
G
C
(dB), IIP3 (dBm), SSB NF (dB)
2550MHz Conversion Gain, IIP3
and NF vs LO Power (Low Side LO)
28
26
24
IIP3
22
20
18
16 NF
14
12
10
8
6
4 G
C
2
0
–4
–6
4
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
1
0
3.0
0
–2
2
LO INPUT POWER (dBm)
4
6
5567 G04
0
–2
2
LO INPUT POWER (dBm)
4
6
5567 G05
5567 G03
Conversion Gain, IIP3 and NF
vs RF Frequency (High Side LO)
30
28
26
IIP3 (dBm), NF (dB)
24
22
20
18
16
14
12
10
NF
1.4 1.6
1.8 2.0 2.2 2.4 2.6
RF FREQUENCY (GHz)
2.8
G
C
2
T
C
= 25°C 3
G
C
(dB)
IIP3
5
G
C
(dB), IIP3 (dBm), SSB NF (dB)
1950MHz Conversion Gain, IIP3
and NF vs LO Power (High Side LO)
28
26
24
IIP3
22
20
18
16
NF
14
12
10
8
6
4 G
C
2
0
–6
–4
G
C
(dB), IIP3 (dBm), SSB NF (dB)
2550MHz Conversion Gain, IIP3
and NF vs LO Power (High Side LO)
28
26
24
22 IIP3
20
18
16 NF
14
12
10
8
6
4 G
C
2
0
–4
–6
4
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
1
0
3.0
–2
2
0
LO INPUT POWER (dBm)
4
6
5567 G07
0
–2
2
LO INPUT POWER (dBm)
4
6
5567 G08
5567 G06
RF Isolation vs RF Frequency
65
60
RF ISOLATION (dB)
55
LO LEAKAGE (dBm)
50
45
40
35
30
25
1.4
1.6
RF-IF
T
C
= 25°C
RF-LO
–20
LO Leakage vs LO Frequency
T
C
= 25°C
–30
LO-IF
–40
–50
–60
LO-RF
1.8 2.0 2.2 2.4 2.6
RF FREQUENCY (GHz)
2.8
3.0
–70
1.2
1.6
5567 G09
2.8
2.0
2.4
LO FREQUENCY (GHz)
3.2
5567 G10
5567f
5
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