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NM93C06EMT8

产品描述256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
产品类别存储    存储   
文件大小108KB,共13页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 全文预览

NM93C06EMT8概述

256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)

NM93C06EMT8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Fairchild
零件包装代码SOIC
包装说明TSSOP, TSSOP8,.25
针数8
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性40 YEARS OF DATA RETENTION
最大时钟频率 (fCLK)1 MHz
数据保留时间-最小值40
耐久性1000000 Write/Erase Cycles
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.4 mm
内存密度256 bi
内存集成电路类型EEPROM
内存宽度16
功能数量1
端子数量8
字数16 words
字数代码16
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16X16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TSSOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度1.2 mm
串行总线类型MICROWIRE
最大待机电流0.00005 A
最大压摆率0.001 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3 mm
最长写入周期时间 (tWC)10 ms
写保护SOFTWARE

文档预览

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NM93C06 256-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
February 2000
NM93C06
256-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as
16 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
There are 7 instructions implemented on the NM93C06 for various
Read, Write, Erase, and Write Enable/Disable operations. This
device is fabricated using Fairchild Semiconductor floating-gate
CMOS process for high reliability, high endurance and low power
consumption.
“LZ” and “L” versions of NM93C06 offer very low standby current
making them suitable for low power applications. This device is
offered in both SO and TSSOP packages for small space consid-
erations.
Features
I
Wide V
CC
2.7V - 5.5V
I
Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I
No Erase instruction required before Write instruction
I
Self timed write cycle
I
Device status during programming cycles
I
40 year data retention
I
Endurance: 1,000,000 data changes
I
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Functional Diagram
CS
SK
DI
INSTRUCTION
REGISTER
V
CC
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
GENERATORS
ADDRESS
REGISTER
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
V
SS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
© 2000 Fairchild Semiconductor International
NM93C06 Rev. E
1
www.fairchildsemi.com

 
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