Common Source
Push-Pull Pair
D
G
S
(Flange)
D
ARF473
AR
F47
3
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
•
Specified 135 Volt, 130 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 13dB (Class AB)
•
Efficiency = 50%
MAXIMUM RATINGS
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
(each device)
G
165 V 300 W 150 MHz
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
•
High Performance Push-Pull RF Package.
•
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
•
Low Thermal Resistance.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF473
UNIT
Volts
Amps
Volts
Watts
°C
500
10
±30
500
-55 to 200
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
g
fs1
g
fs2
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Voltage
1
MIN
TYP
MAX
UNIT
Volts
µA
nA
mhos
500
4
25
250
±100
4
0.9
3
6
1.1
5
0.1
(I
D
(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Forward Transconductance Match Ratio (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
Gate Threshold Voltage Match (V
DS
= V
GS
, I
D
= 200mA)
/
V
GS
(TH)
∆V
GS
(TH)
Volts
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
UNIT
6-2003
050-4920 Rev C
0.35
0.1
°C/W
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS (per section)
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
(Push-Pull Configuration)
ARF473
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
Ω
MIN
TYP
MAX
UNIT
1200
140
9
5.1
4.1
12.8
4.0
1600
200
12
10
8
20
8
ns
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Characteristic
Test Conditions
f = 130MHz
I
dq
= 150mA
V
DD
= 135V
MIN
TYP
MAX
UNIT
dB
%
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 5:1
13
50
14
55
P
out
= 300W
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
26
24
22
GAIN (dB)
P
out
= 300W
CAPACITANCE (pf)
Class AB
V
DD
= 125V
3000
Ciss
1000
500
Coss
100
50
20
18
16
14
12
10
0
50
75
100
125
150
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
25
Crss
10
.1
.5
1
5
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
12
I
D
, DRAIN CURRENT (AMPERES)
80
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
8
6
4
2
0
0
TJ = -55°C
DATA FOR BOTH SIDES
IN PARALLEL
OPERATION HERE
LIMITED BY RDS (ON)
100us
1ms
10
5
6-2003
TJ = +25°C
TJ = +125°C
1
2
3
4
5
6
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
10ms
TC =+25°C
TJ =+200°C
SINGLE PULSE
C
050-4920 Rev
100ms
DC
1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF473
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
I
D
, DRAIN CURRENT (AMPERES)
25
VGS=15 & 10V
9V
15
8V
6V
5.5V
5V
5
4.5V
4V
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
20
10
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
-25
0
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.4
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
0.001
10
-5
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
10
-4
10
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
27.12
40.68
63.8
81.36
127.4
Zin (Ω)
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
Z
OL
(Ω)
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Zin - Gate shunted with 100Ω
I
DQ
= 75 mA each side
Z
OL
- Conjugate of optimum load for 300 Watts output at Vdd = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively
6-2003
050-4920 Rev C
ARF473
81.36 MHz Test amplifier Po = 500W @130 V
L3
Vg1
C6
C7
J1
C1
T1
R1
TL1
C2
TL2
C8
C9
C4
R2
Vg2
DUT
TL4
TL6
L2
J2
L1
TL3
C3
TL5
T2
C5
C10
+
130V
-
C1 10-80 pF trimmer ARCO 462
C2-4 1000 pF NPO 500V chip
C5-C9 10 nF 500V chip
C10 .47 uF Ceramic 500V
L1 680 nH 12t #24 enam .312" dia
L2 55 nH 3t #18 enam .25" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH
R1-2 100
Ω
0.5 W
T1 4:1 RF transformer on two beads same as L3.
T2 1:1 coax balun. Fair-Rite 2643665902 bead
on 1.5" RG-303 50
Ω
teflon coax.
TL1-2 Printed line L=1.2" w=.23"
TL3-4 Printed line L=.25" w=.23"
TL5-6 Printed line L=0.25" w=.23"
0.23" wide stripline on FR-4 board is ~32Ω Zo
Peak Output Power vs... Vdd
900
800
700
600
500
400
300
200
100
0
80
100
120
140
160
1.2
Notes:
The value of L2 must be adjusted as the
supply voltage is changed to maintain
resonance in the output circuit. At 81 MHz its
value changes from approximately 50 nH at
100V to 70 nH at 165V.
The duty cycle past 100V must be reduced to
insure power dissipation is within the limits of
the device. Maximum pulse length should be
100mS or less. See figure 7.
Max
Duty Cycle
1
0.8
Po Watts
0.6
0.4
0.2
0
Drain Supply Voltage Vdd
1.100
.435
1
0.400
2
Pin 1. Drain
2. Drain
3. Gate
.065 rad 2 PL
4. Gate
5. Source
.005
0.390
HAZARDOUS MATERIAL
WARNING
5
The ceramic portion of the
device between leads and
mounting flange is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
0.200
3
.225
4
.060
.107
1.340
6-2003
.210
C
050-4920 Rev
Package Dimensions (inches)
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