Ordering number : EN6794A
CPH6311
SANYO Semiconductors
DATA SHEET
CPH6311
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
✕0.8mm)
2
Conditions
Ratings
Unit
--
20
±10
--5
--20
1.6
2.0
150
--55 to +150
V
V
A
A
W
W
°C
°C
Mounted on a FR4 board PW≤5S
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=
--
1mA, VGS=0V
VDS=
--
20V, VGS=0V
VGS=±8V, VDS=0V
VDS=
--
10V, ID=
-
1mA
-
VDS=
--
10V, ID=
--
3A
ID=
--
3A, VGS=
--
4.5V
ID=
--
1A, VGS=
--
2.5V
Ratings
min
typ
max
Unit
V
--
20
--
1
±10
µA
µA
V
S
mΩ
mΩ
--
0.4
5.8
8.5
32
46
--
1.4
42
60
Marking : JM
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32807PE TI IM TC-00000618 / D2500 TS IM TA-3168 No.6794-1/4
CPH6311
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=
--
10V, f=1MHz
VDS=
--
10V, f=1MHz
VDS=
--
10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=
--
10V, VGS=
--
10V, ID=
--
5A
VDS=
--
10V, VGS=
--
10V, ID=
--
5A
VDS=
--
10V, VGS=
--
10V, ID=
--
5A
IS=
--
5A, VGS=0V
Ratings
min
typ
1230
200
170
17
100
100
95
31
2.8
4.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--
0.83
-
1.5
-
V
Package Dimensions
unit : mm (typ)
7018A-003
Switching Time Test Circuit
VIN
VDD= --10V
0.6
2.9
0.15
0V
--4.5V
VIN
ID= --3A
RL=3.3Ω
6
5
4
0.2
2.8
1.6
0.05
D
PW=10µs
D.C.≤1%
VOUT
G
0.6
1
2
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
CPH6311
P.G
50Ω
0.2
S
0.9
--6
ID -- VDS
--4.0V
--3.5
--8
ID -- VGS
VDS= --10V
V
--3.0V
--2.5V
--1.5V
--7
--6
--5
--4
--3
--2
--1
--5
Drain Current, ID -- A
--4
--3
Drain Current, ID -- A
--4.5V
--2.
0
V
Ta=
7
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
VGS= --1.0V
--0.7
--0.8
--0.9
--1.0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
Drain-to-Source Voltage, VDS -- V
IT02276
Gate-to-Source Voltage, VGS -- V
--25
--1
°
C
IT02277
25
°
C
--2
5
°
C
No.6794-2/4
CPH6311
140
RDS(on) -- VGS
Ta=25°C
140
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
100
--3.0A
80
80
60
ID= --1.0A
60
40
40
--2.5V
V S=
--1.0A, G
I D=
= --4.5V
--3.0A, V GS
I D=
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
IT02278
--10
7
5
3
2
Ambient Temperature, Ta --
°C
IT02279
yfs
-- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
yfs
-- S
VDS= --10V
Ta=
75
°
C
0
--0.1
--0.2
--0.3
--0.4
C
25
°
= --
Ta
C
25
°
75
°
C
Source Current, IS -- A
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--0.001
5 7 --10
IT02280
10000
7
5
Drain Current, ID -- A
1000
7
5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
--25
°
C
25
°
C
IT02281
VDD= --10V
VGS= --4.5V
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
2
3
5
tf
Ciss, Coss, Crss -- pF
td(off)
3
2
Ciss
1000
7
5
3
2
tr
td(on)
Coss
Crss
100
7
--1.0
2
3
5
7
--10
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
--10
--9
IT02282
--100
7
5
3
2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT02283
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --5A
IDP= --20A
ID= --5A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
30
35
IT02284
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
PW≤10µs
1m
100
µs
s
10
ms
10
0m
s
op
Operation in
era
tio
this area is
n
limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
5 7--0.1 2 3
5 7--1.0 2 3
5 7 --10
2 3
DC
--0.01
--0.01 2 3
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
5 7--100
IT02285
No.6794-3/4
CPH6311
2.0
PD -- Ta
Allowable Power Dissipation, PD -- W
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
1.6
1.5
M
2.0
ou
nt
ed
on
M
1.5
ac
ou
er
nt
1.0
am
ed
o
ic
na
bo
ar
FR
d(
90
1.0
4b
oa
0m
rd
0.5
m
2
✕
0
PW
≤
5
S
.8m
m
0.5
)
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT02286
Ambient Temperature, Ta --
°C
IT02642
Note on usage : Since the CPH6311 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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above.
This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS No.6794-4/4
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