BFP196R
NPN Silicon RF Transistor*
•
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
•
Power amplifier for DECT and PCN systems
•
f
T
= 7.5 GHz,
F
= 1.3 dB at 900 MHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
4
1
3
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP196R
Maximum Ratings
Parameter
Marking
Pin Configuration
RIs
1=E 2=C 3=E 4=B -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT143R
Value
12
20
20
2
150
15
700
150
-55 ... 150
-55 ... 150
Value
≤
105
Unit
K/W
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
77°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
3
For
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
1
BFP196R
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 50 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
I
EBO
-
-
1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
12
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2007-04-20
2
BFP196R
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
5
-
7.5
0.83
-
1.3
GHz
pF
C
cb
C
ce
-
0.35
-
C
eb
-
3.9
-
F
-
-
G
ma
-
-
|S
21e
|
2
-
-
13
7
-
-
16.5
10.5
-
-
1.3
2.3
-
-
dB
dB
1/2
ma
= |
S
21
/
S
12
| (k-(k²-1)
)
2007-04-20
3
BFP196R
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
1.7264
20
1.1766
3.8128
0.88299
1
13.325
23.994
1.9775
0.73057
2.2413
0
3
fA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
125
0.4294
10.584
0.019551
1.2907
0.75103
0.7308
0.44322
0
0.3289
0
0
0.50922
-
A
-
A
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.80012
119.22
0.94288
4.8666
0.084011
0.27137
0.33018
0.1
1667
0.29998
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.84
0.65
0.31
0.14
0.07
0.42
145
19
281
nH
nH
nH
nH
nH
nH
fF
fF
fF
Valid up to 6GHz
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
2007-04-20
4
BFP196R
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(
t
p
)
800
mW
10
3
K/W
600
R
thJS
P
tot
10
2
500
400
300
10
1
200
100
10
0 -7
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
0
20
40
60
80
100
120
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2007-04-20
5
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