BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Zener Diodes
Features
•
•
•
•
•
Sillicon planar zener diodes
Low profile surface-mount package
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17249
Mechanical Data
Case:
JEDEC DO219AB (SMF
®
) plastic case
Weight:
approx. 15 mg
Packaging codes/options:
GS18/10K per 13" reel, (8 mm tape), 50K/box
GS08/3K per 7" reel, (8 mm tape), 30K/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Non-repetitive peak pulse power
dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
100 µs square pulse
2)
Symbol
P
tot
P
tot
P
ZSM
Value
2.3
0.8
1)
300
Unit
W
W
W
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2)
T = 25 °C prior to surge
j
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
1)
Test condition
Symbol
R
thJA
R
thJL
T
j
T
stg
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.2 A
Symbol
V
F
Min.
Typ.
Max.
1.2
Unit
V
Document Number 81821
Rev. 1.0, 09-Jun-09
For technical support, please contact:
Diodes-SSP@vishay.com
www.vishay.com
1
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Electrical Characteristics
T
J
= 25 °C, unless otherwise specified
Working voltage
1)
Part number
Marking code
V
Z
at I
ZT
V
min.
BZD17C3V6P
BZD17C3V9P
BZD17C4V3P
BZD17C4V7P
BZD17C5V1P
BZD17C5V6P
BZD17C6V2P
BZD17C6V8P
BZD17C7V5P
BZD17C8V2P
BZD17C9V1P
BZD17C10P
BZD17C11P
BZD17C12P
BZD17C13P
BZD17C15P
BZD17C16P
BZD17C18P
BZD17C20P
BZD17C22P
BZD17C24P
BZD17C27P
BZD17C30P
BZD17C33P
BZD17C36P
BZD17C39P
BZD17C43P
BZD17C47P
BZD17C51P
BZD17C56P
BZD17C62P
BZD17C68P
BZD17C75P
BZD17C82P
BZD17C91P
BZD17C100P
BZD17C110P
BZD17C120P
BZD17C130P
BZD17C150P
BZD17C160P
BZD17C180P
BZD17C200P
Note:
1)
Pulse test: t
p
≤
5 ms
I0
I1
I2
I3
I4
I5
I6
I7
I8
I9
J0
J1
J2
J3
J4
J5
J6
J7
J8
J9
K0
K1
K2
K3
K4
K5
K6
K7
K8
K9
L0
L1
L2
L3
L4
L5
L6
L7
L8
L9
M0
M1
M2
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
max.
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
typ.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
Differential
resistance
r
dif
at I
Z
Ω
max.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
min.
- 0.14
- 0.14
- 0.12
- 0.1
- 0.08
- 0.04
- 0.01
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
coefficient
α
Z
at I
Z
%/°C
max.
- 0.04
- 0.04
- 0.02
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Test
current
I
ZT
mA
Reverse leakage
current
I
R
µA
max.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
V
R
V
www.vishay.com
2
For technical support, please contact:
Diodes-SSP@vishay.com
Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
10
I
F
- Forward Current (A)
Max.
V
F
Typ.
V
F
1
0.1
0.6
17411
0.8
1.0
1.2
1.4
1.6
V
F
- Forward
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
10 000
C
D
- Typ. Junction Capacitance (pF)
C5V1P
1000
C6V8P
C12P
C18P
100
C27P
C200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
C51P
17412
V
R
- Reverse
Voltage
(V)
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
3.0
P
tot
- Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
17413
Tie point temperature
Ambient temperature
0
25
50
75
100
125
150
T
amb
- Ambient Temperature (°C)
Figure 3. Power Dissipation vs. Ambient Temperature
Document Number 81821
Rev. 1.0, 09-Jun-09
For technical support, please contact:
Diodes-SSP@vishay.com
www.vishay.com
3
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
Package Dimensions
in millimeters (inches)
: DO219AB
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
www.vishay.com
4
5
For technical support, please contact:
Diodes-SSP@vishay.com
Document Number 81821
Rev. 1.0, 09-Jun-09
MEMS传感器
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